CMOS-compatible high efficiency double-etched apodized waveguide grating coupler

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics

Silicon nitride (Si3N4) is an ideal candidate for the development of low-loss photonic integrated circuits. However, efficient light coupling between standard optical fibers and Si3N4 chips remains a significant challenge. For vertical grating couplers, the lower index contrast yields a weak grating strength, which translates to long diffractive structures, limiting the coupling performance. In response to the rise of hybrid photonic platforms, the adoption of multi-layer grating arrangements has emerged as a promising strategy to enhance the performance of Si3N4 couplers. In this work, we present the design of high-efficiency surface grating couplers for the Si3N4 platform with an amorphous silicon (α-Si) overlay. The surface grating, fully formed in an α-Si waveguide layer, utilizes subwavelength grating (SWG)-engineered metamaterials, enabling simple realization through single-step patterning. This not only provides an extra degree of freedom for controlling the fiber-chip coupling but also facilitates portability to existing foundry fabrication processes. Using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations, a metamaterial-engineered grating coupler is designed with a coupling efficiency of -1.7 dB at an operating wavelength of 1.31 µm, with a 1 dB bandwidth of 31 nm. Our proposed design presents a novel approach to developing high-efficiency fiber-chip interfaces for the silicon nitride integration platform for a wide range of applications, including datacom and quantum photonics.

High-performance, adiabatically nanotapered fiber-chip couplers in silicon at 2 microns wavelength

Fiber optic technology connects the world through the Internet, enables remote sensing, and connects disparate functional optical devices. Highly confined silicon photonics promises extreme scale and functional integration. However, the optical modes of silicon nanowire waveguides and optical fibers are very different, making efficient fiber-chip coupling a challenge. Vertical grating couplers, the dominant coupling method today, have limited optical bandwidth and are naturally out-of-plane. Here we demonstrate a new method that is low-loss, broadband, manufacturable, and naturally planar. We adiabatically couple a tapering silicon nanowire waveguide to a conic nanotapered optical fiber, measuring transmission between 2.0 µm and 2.2 µm wavelength. The silicon chip is fabricated at a commercial foundry and then post-processed to release the tapering nanowires. We estimate an optimal per-coupler transmission of -0.48 dB (maximum; 95% confidence interval [+0.46, -1.68] dB) and a 1-dB bandwidth of at least 295 nm. With automated measurements, we quantify the device tolerance to lateral misalignment, measuring a flat response within ±0.968 µm. This new design can enable low-loss modular systems of integrated photonics irrespective of material and waveband.

Efficient and fabrication error tolerant grating couplers on the InP membrane on silicon platform

In order to couple light between photonic integrated circuits and optical fibers, grating couplers are commonly employed. This paper describes the design and fabrication of deep and shallow-etched grating couplers with a metal back-reflector with record low insertion losses in InP-based platforms. The measured insertion losses for deep and shallow-etched gratings are 2.4 and 2.6 dB, respectively. Additionally, fabrication error tolerances in shallow etched grating couplers have been examined experimentally, which showed high tolerance of this structure toward the grating period and fill factor.

The Design, Fabrication and Characterization of Grating Couplers for SiGe Photonic Integration Employing a Reflective Back Mirror

We propose and demonstrate an efficient grating coupler for integrated SiGe photonic devices. A bottom metal layer is adopted to enhance the coupling efficiency on the wafer backside. A low coupling loss of -1.34 dB and -0.79 dB can be theoretically obtained with optimal parameters for uniform and apodized grating couplers, respectively. The fabrication process is CMOS compatible without need of wafer bonding. The influence of fabrication errors on the coupling efficiency is analyzed in terms of substrate thickness, grating dimension and material refractive index. The results indicate a large tolerance for the deviations in practical fabrication. The measured coupling loss of the uniform grating is -2.7 dB at approximately 1465 nm with a 3 dB bandwidth of more than 40 nm. The proposed grating coupler provides a promising approach to realize efficient chip-fiber coupling for the SiGe photonic integration.

Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics

Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabrication of micro- and nanoscale 3D freeform geometries in silicon and holds the promise to enable novel chip-scale optics operating at the near-infrared spectrum. However, Mac-Imprint of silicon concomitantly generates mesoscale roughness (e.g., protrusion size ≈45 nm) creating prohibitive levels of light scattering. This arises from the requirement to coat stamps with nanoporous gold catalyst that, while sustaining etchant diffusion, imprints its pores (e.g., average diameter ≈42 nm) onto silicon. In this work, roughness is reduced to sub-10 nm levels, which is in par with plasma etching, by decreasing pore size of the catalyst via dealloying in far-from equilibrium conditions. At this level, single-digit nanometric details such as grain-boundary grooves of the catalyst are imprinted and attributed to the resolution limit of Mac-Imprint, which is argued to be twice the Debye length (i.e., 1.7 nm)-a finding that broadly applies to metal-assisted chemical etching. Last, Mac-Imprint is employed to produce single-mode rib-waveguides on pre-patterned silicon-on-insulator wafers with root-mean-square line-edge roughness less than 10 nm while providing depth uniformity (i.e., 42.9 ± 5.5 nm), and limited levels of silicon defect formation (e.g., Raman peak shift < 0.1 cm^-1 ) and sidewall scattering.

Compact vertical grating coupler with an achromatic in-plane metalens on a 220-nm silicon-on-insulator platform

We proposed a new type of vertical grating couplers (VGCs) with a compact footprint on the 220-nm silicon-on-insulator platform. The overall size of the device containing the L-shaped coupling grating and the taper with achromatic in-plane metalens is only 45 × 15 µm², and the measured coupling efficiency at 1550 nm is -5.2 dB with a 1 dB bandwidth of 38 nm, around 1.6 dB higher than the VGC without metalens. The incidence angle mismatch has a 1 dB bandwidth of roughly 4°, whereas the displacement mismatch along the x-/y- axis has a bandwidth of around 3/4 µm. Furthermore, we experimentally show that such a design is compatible with VGCs operating in the S, C, and L bands.

Hybrid microwave-optical scanning probe for addressing solid-state spins in nanophotonic cavities

Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices. Efficiently coupling light and microwave radiation into these structures is an experimental challenge, especially in cryogenic or high vacuum environments with limited sample access. In this work, we demonstrate a fiber-based scanning probe that simultaneously couples light into a planar photonic circuit and delivers high power microwaves for driving electron spin transitions. The optical portion achieves 46% one-way coupling efficiency, while the microwave portion supplies an AC magnetic field with strength up to 9 Gauss at 10 Watts of input microwave power. The entire probe can be scanned across a large number of devices inside a ³He cryostat without free-space optical access. We demonstrate this technique with silicon nanophotonic circuits coupled to single Er³⁺ ions.

Deterministic design of focusing apodized subwavelength grating coupler based on weak form and transformation optics

The focusing apodized subwavelength grating coupler (F-ASGC) has advantages of high coupling efficiency, small footprint and simple fabrication process, which make it a popular component for chip-scale coupling and testing of integrated optical circuit. However, the design of F-ASGC based on effective medium theory lacks accuracy, causing the drawbacks of peak wavelength deviation and performance degradation. In this work, we propose a deterministic design method of F-ASGC. Our grating coupler is formed by assembling various subwavelength grating units according to their complex effective indexes. The complex effective indexes of these grating units are accurately obtained by the weak form calculation. Then combining with transformation optics, we strictly analyze the F-ASGC for the first time. The simulation results show that the deterministically designed F-ASGC has high coupling efficiency of -2.51 dB, 3 dB bandwidth of 51 nm, and accurate central wavelength of 1553.1 nm. And we also fabricated it on the commercial SOI wafer. The measured maximum efficiency is -3.10 dB, the 3 dB bandwidth is 55 nm, and the central wavelength is 1551.5 nm.

Molding free-space light with guided wave-driven metasurfaces

Metasurfaces with unparalleled controllability of light have shown great potential to revolutionize conventional optics. However, they mainly require external light excitation, which makes it difficult to fully integrate them on-chip. On the other hand, integrated photonics enables packing optical components densely on a chip, but it has limited free-space light controllability. Here, by dressing metasurfaces onto waveguides, we molded guided waves into any desired free-space modes to achieve complex free-space functions, such as out-of-plane beam deflection and focusing. This metasurface also breaks the degeneracy of clockwise- and counterclockwise-propagating whispering gallery modes in an active microring resonator, leading to on-chip direct orbital angular momentum lasing. Our study shows a viable route toward complete control of light across integrated photonics and free-space platforms and paves a way for creating multifunctional photonic integrated devices with agile access to free space, which enables a plethora of applications in communications, remote sensing, displays, etc.

Lateral silicon photonic grating-to-fiber coupling with angle-polished silica waveguide blocks

We demonstrate a lateral, planar fiber-to-waveguide coupling strategy for photonic integrated circuits with diffraction grating couplers using angle-polished silica waveguide blocks fabricated with well-established planar lightwave circuit technologies. Compared to the conventional lateral coupling scheme with angle-polished fibers, the demonstrated scheme can significantly decrease the diverging distance between the reflective angle-polished facet and the grating couplers, and thereby maintains the overall coupling efficiency and alignment tolerances of the vertical coupling approach. The proposed method shows a small penalty in coupling efficiency (< 0.1 dB), and in-plane (out-of-plane) alignment tolerance for 1 dB excess loss is approximately 5 µm (9 µm).

100 Gb/s Silicon Photonic WDM Transmitter with Misalignment-Tolerant Surface-Normal Optical Interfaces

A 4 × 25 Gb/s ultrawide misalignment tolerance wavelength-division-multiplex (WDM) transmitter based on novel bidirectional vertical grating coupler has been demonstrated on complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator (SOI) platform. Simulations indicate the bidirectional grating coupler (BGC) is widely misalignment tolerant, with an excess coupling loss of only 0.55 dB within ±3 μm fiber misalignment range. Measurement shows the excess coupling loss of the BGC is only 0.7 dB within a ±2 μm fiber misalignment range. The bidirectional grating structure not only functions as an optical coupler, but also acts as a beam splitter. By using the bidirectional grating coupler, the silicon optical modulator shows low insertion loss and large misalignment tolerance. The eye diagrams of the modulator at 25 Gb/s don’t show any obvious deterioration within the waveguide-direction fiber misalignment ranger of ±2 μm, and still open clearly when the misalignment offset is as large as ±4 μm.

Efficient and broadband subwavelength grating coupler for 3.7 μm mid-infrared silicon photonics integration

A grating coupler is an essential building block for compact and flexible photonics integration. In order to meet the increasing demand of mid-infrared (MIR) integrated photonics for sensitive chemical/gas sensing, we report a silicon-on-insulator (SOI) based MIR subwavelength grating coupler (SWGC) operating in the 3.7 μm wavelength range. We provide the design guidelines of a uniform and apodized SWGC, followed by numerical simulations for design verification. We experimentally demonstrate both types of SWGC. The apodized SWGC enables high coupling efficiency of -6.477 dB/facet with 3 dB bandwidth of 199 nm, whereas the uniform SWGC shows larger 3dB bandwidth of 263.5 nm but slightly lower coupling efficiency of -7.371 dB/facet.

Silicon waveguide grating coupler based on a segmented grating structure

We present the simulation, fabrication, and experimental results of a high-efficiency and wide-bandwidth segmented waveguide grating coupler on a silicon-on-insulator platform for near vertical optical coupling between the waveguide and optical fiber. The coupler comprises segmented gratings, which can increase vertical coupling to the optical fiber and reduce backward reflection. The proposed grating coupler has a 3 dB bandwidth of 71.4 nm and a coupling efficiency of 51.7% at a wavelength of 1550 nm. Compared with the standard uniform waveguide grating coupler, the coupling efficiency was improved by 25.64%.

Broad-band surface optical coupler based on a SiO2-capped vertically curved silicon waveguide

A chip-surface optical coupler based on a vertically curved Si waveguide was demonstrated for coupling with high-numerical-aperture single-mode optical fibers with a mode-field diameter of 5 µm. This device features a dome-like SiO₂ coupler cap, which acts as collimation lens. We succeeded in fabricating this structure using an isotropic SiO₂ deposition technique employing plasma-enhanced chemical vapor deposition and obtained a light output that approximates that of a 5-µm-waist Gaussian beam. The fabricated coupler showed a coupling loss of less than 4.2 dB and a 0.5-dB-loss bandwidth above 150 nm for TE-polarized light.

Fully-automated optimization of grating couplers

We present a gradient-based algorithm to design general 1D grating couplers without any human input from start to finish, including a choice of initial condition. We show that we can reliably design efficient couplers to have multiple functionalities in different geometries, including conventional couplers for single-polarization and single-wavelength operation, polarization-insensitive couplers, and wavelength-demultiplexing couplers. In particular, we design a fiber-to-chip blazed grating with under 0.2 dB insertion loss that requires a single etch to fabricate and no back-reflector.

Inverse design of near unity efficiency perfectly vertical grating couplers

Efficient coupling between integrated optical waveguides and optical fibers is essential to the success of silicon photonics. While many solutions exist, perfectly vertical grating couplers that scatter light out of a waveguide in the direction normal to the waveguide's top surface are an ideal candidate due to their potential to reduce packaging complexity. Designing such couplers with high efficiencies, however, has proven difficult. In this paper, we use inverse electromagnetic design techniques to optimize a high efficiency two-layer perfectly vertical silicon grating coupler. Our base design achieves a chip-to-fiber coupling efficiency of 99.2% (-0.035 dB) at 1550 nm. Using this base design as a starting point, we run subsequent constrained optimizations to realize vertical couplers with coupling efficiencies over 96% and back reflections of less than -40 dB which can be fabricated using 65 nm-resolution lithography. These results demonstrate a new path forward for designing fabrication-tolerant ultra high efficiency grating couplers.

A compact silicon grating coupler based on hollow tapered spot-size converter

A new compact silicon grating coupler enabling fibre-to-chip light coupling at a minimized taper length is proposed. The proposed coupler, which incorporates a hollow tapered waveguide, converts the spot-size of optical modes from micro- to nano-scales by reducing the lateral dimension from 15 µm to 300 nm at a length equals to 60 µm. The incorporation of such a coupler in photonic integrated circuit causes a physical footprint as small as 81 µm × 15 µm with coupling efficiency and 3-dB coupling bandwidth as high as 72% and 69 nm respectively.

Chip-scale optical vortex lattice generator on a silicon platform

An optical vortex (OV) with an isolated field singularity has been extensively studied in a variety of fields. An OV lattice with a network of optical vortices may find more advanced applications in widespread areas such as optical metrology, optical manipulation, and quantum processing. An OV lattice generated by traditional approaches relies on a number of bulky diffractive optical elements with large volumes and long working distances. Here we present a simple and compact on-chip OV lattice emitter on silicon photonics platforms. The principle relies on three-plane-wave interference. We design, fabricate, and demonstrate an on-chip OV lattice emitter consisting of three parallel waveguides with etched tilt gratings. The tilt gratings facilitate flexible light emission in a wide range of directions, enabling the generation of an OV lattice above the silicon chip. The demonstrated on-chip OV lattice emitter may open a door to generate, manipulate, and detect an OV lattice using photonic integrated circuits.

L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20  dB). A measured coupling efficiency of -2.7  dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

Efficient 5.2 µm wavelength fiber-to-chip grating couplers for the Ge-on-Si and Ge-on-SOI mid-infrared waveguide platform

We present the design, fabrication and characterization of efficient fiber-to-chip grating couplers on a Germanium-on-Silicon (Ge-on-Si) and Germanium-on-silicon-on-insulator (Ge-on-SOI) platform in the 5 µm wavelength range. The best grating couplers on Ge-on-Si and Ge-on-SOI have simulated coupling efficiencies of -4 dB (40%) with a 3 dB bandwidth of 180 nm and -1.5 dB (70%) with a 3 dB bandwidth of 200 nm, respectively. Experimentally, we show a maximum efficiency of -5 dB (32%) and a 3 dB bandwidth of 100 nm for Ge-on-Si grating couplers, and a -4 dB (40%) efficiency with a 3 dB bandwidth of 180 nm for Ge-on-SOI couplers.

Photonic crystal and quasi-crystals providing simultaneous light coupling and beam splitting within a low refractive-index slab waveguide

Coupling between free space components and slab waveguides is a common requirement for integrated optical devices, and is typically achieved by end-fire or grating coupling. Power splitting and distribution requires additional components. Usually grating couplers are used in combination with MMI/Y-splitters to do this task. In this paper, we present a photonic crystal device which performs both tasks simultaneously and is able to couple light at normal incidence and near normal incidence. Our approach is scalable to large channel counts with little impact on device footprint. We demonstrate in normal incidence coupling with multi-channel splitting for 785 nm light. Photonic crystals are etched into single mode low refractive index SiON film on both SiO₂/Si and borosilicate glass substrate. Triangular lattices are shown to provide coupling to 6 beams with equal included angle (60°), while a quasi-crystal lattice with 12-fold rotational symmetry yields coupling to 12 beams with equal included angle (30°). We show how to optimize the lattice constant to achieve efficient phase matching between incident and coupled mode wave vectors, and how to adjust operating wavelength from visible to infrared wavelengths.

Graded-index thin-film stack for cladding and coupling

A graded-index multilayer thin-film stack is optimized to act as a cladding layer on top of a silicon (Si) nanowaveguide and also a collimator for chip coupling where the waveguide ends. The numerical example shows an optimized graded-index profile from 2.35 to 1.45 provides an optical coupling to the standard single-mode fiber with efficiency close to 90% while retaining tight light confinement for the Si nanowaveguide. The corresponding material realization of a graded-index profile with a Si-rich nitride SiN_x/SiON/SiO₂ system is explored using inductively coupled plasma chemical vapor deposition, and a SiN_x cladded Si waveguide is demonstrated.

Single-etch subwavelength engineered fiber-chip grating couplers for 1.3 µm datacom wavelength band

We report, for the first time, on the design and experimental demonstration of fiber-chip surface grating couplers based on subwavelength grating engineered nanostructure operating in the low fiber chromatic dispersion window (around 1.3 μm wavelengths), which is of great interest for short-reach data communication applications. Our coupler designs meet the minimum feature size requirements of large-volume deep-ultraviolet stepper lithography processes. The fiber-chip couplers are implemented in a standard 220-nm-thick silicon-on-insulator (SOI) platform and are fabricated by using a single etch process. Several types of couplers are presented, specifically the uniform, the apodized, and the focusing designs. The measured peak coupling efficiency is -2.5 dB (56%) near the central wavelength of 1.3 μm. In addition, by utilizing the technique of the backside substrate metallization underneath the grating couplers, the coupling efficiency of up to -0.5 dB (89%) is predicted by Finite Difference Time Domain (FDTD) calculations.

High-performance silicon-on-insulator grating coupler with completely vertical emission

We study the physical concept of utilizing a critical coupling to obtain a high-performance grating coupler with completely vertical emission on a silicon-on-insulator substrate. Following our design strategy, we numerically show that when our grating coupler is coupled to a standard single-mode fiber operating at 1310 nm wavelength, a -1.46 dB coupling loss, a 20 nm spectral full-width-half-maximum, and a -24 dB back reflection can be achieved at the same time without full optimization. A practical design that largely relaxes the stringent lithography requirement is also proposed and presented.

High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Subwavelength index engineered surface grating coupler with sub-decibel efficiency for 220-nm silicon-on-insulator waveguides

Surface grating couplers are fundamental components in chip-based photonic devices to couple light between photonic integrated circuits and optical fibers. In this work, we report on a grating coupler with sub-decibel experimental coupling efficiency using a single etch process in a standard 220-nm silicon-on-insulator (SOI) platform. We specifically demonstrate a subwavelength metamaterial refractive index engineered nanostructure with backside metal reflector, with the measured peak fiber-chip coupling efficiency of -0.69 dB (85.3%) and 3 dB bandwidth of 60 nm. This is the highest coupling efficiency hitherto experimentally achieved for a surface grating coupler implemented in 220-nm SOI platform.

Broadband polarization independent nanophotonic coupler for silicon waveguides with ultra-high efficiency

Coupling of light to and from integrated optical circuits has been recognized as a major practical challenge since the early years of photonics. The coupling is particularly difficult for high index contrast waveguides such as silicon-on-insulator, since the cross-sectional area of silicon wire waveguides is more than two orders of magnitude smaller than that of a standard single-mode fiber. Here, we experimentally demonstrate unprecedented control over the light coupling between the optical fiber and silicon chip by constructing the nanophotonic coupler with ultra-high coupling efficiency simultaneously for both transverse electric and transverse magnetic polarizations. We specifically demonstrate a subwavelength refractive index engineered nanostructure to mitigate loss and wavelength resonances by suppressing diffraction effects, enabling a coupling efficiency over 92% (0.32 dB) and polarization independent operation for a broad spectral range exceeding 100 nm.

High-Q coupled resonances on a PhC waveguide using a tapered nanofiber with high coupling efficiency

We experimentally demonstrate high-Q cavity formation at an arbitrary position on a silicon photonic crystal waveguide by bringing a tapered nanofiber into contact with the surface of the slab. An ultrahigh Q of 5.1 × 10(5) is obtained with a coupling efficiency of 39%, whose resonant wavelength can be finely tuned by 27 pm by adjusting the contact length of the nanofiber. We also demonstrate an extremely high coupling efficiency of 99.6% with a loaded Q of 6.1 × 10(3). We show that we can obtain a coupled resonances, which has the potential to be used for slow light generation.

High efficiency germanium-assisted grating coupler

We propose a fiber to submicron silicon waveguide vertical coupler utilizing germanium-on-silicon gratings. The germanium is epitaxially grown on silicon in the same step for building photodetectors. Coupling efficiency based on FDTD simulation is 76% at 1.55 µm and the optical 1dB bandwidth is 40 nm.

Short and efficient mode-size converter designed by segmented-stepwise method

We present an efficient segmented-stepwise method to design a short and low-loss mode-size converter. A silicon-on-insulator platform-based converter with 20 μm length and 95.2% conversion efficiency is acquired by taking only 10 optimization generations using 2D-FDTD method. A 3D-FDTD simulation is performed to verify the calculated results, returning an efficiency of 92.1%. The proposed device can be used to connect a 12-μm-wide waveguide and a 0.5-μm-wide single-mode waveguide, with comparable performance of a regular scheme using 150-μm-long linear taper. For demonstration, the converter was fabricated by electron-beam-lithography and inductively-coupled-plasma etching. A conversion loss of -0.62±0.02  dB at 1550 nm was experimentally measured.

Silicon photonics packaging with lateral fiber coupling to apodized grating coupler embedded circuit

We report a novel lateral packaging approach using laser welding technique with angle polished fiber coupling to grating coupler embedded silicon photonic circuit. Measurements show the relax alignment tolerance for fiber packaging process. The packaging excess loss of 1.2 dB is achieved. The use of angle polished fiber for lateral fiber coupling enables an alternative way for cost-effective deployment of silicon photonics packaging in telecommunication systems.

Fiber-chip grating coupler based on interleaved trenches with directionality exceeding 95

We propose a fiber-chip grating coupler that interleaves the standard full and shallow etch trenches in a 220 nm thick silicon layer to provide a directionality upward exceeding 95%. By adjusting the separation between the two sets of trenches, constructive interference is achieved in the upward direction independent of the bottom oxide thickness and without any bottom reflectors, overlays, or customized etch depths. We implement a transverse subwavelength structure in the first two grating periods to minimize back-reflections. The grating coupler has a calculated coupling efficiency of CE~-1.05 dB with a 1 dB bandwidth of 30 nm and minimum feature size of 100 nm, compatible with deep-UV lithography.

Fully etched apodized grating coupler on the SOI platform with -0.58 dB coupling efficiency

We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon-on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity and coupling angle dependence are experimentally investigated. A record ultrahigh CE of -0.58 dB with a 3 dB bandwidth of 71 nm and low back reflection are demonstrated.

Efficient silicon nitride grating coupler with distributed Bragg reflectors

In this paper we have designed, fabricated and characterized a high efficiency Silicon nitride grating coupler at 1490 nm. Distributed Bragg reflectors as bottom mirrors are employed to improve the coupling efficiency by reflecting the downward traveling light. The peak coupling efficiency obtained is about -2.5 dB and the 1-dB bandwidth is 53 nm. The fabrication process is CMOS-compatible and is ready to be integrated with photonic circuits.

Optimization of fiber grating couplers on SOI using advanced search algorithms

A one-dimensional fiber grating coupler is derived from a waveguide with random etches using implementations of particle swarm and genetic algorithms. The resulting gratings yield a theoretical coupling efficiency of up to 1.1 dB and prompt clear design rules for the layout of highly efficient fiber grating couplers.

Wide bandwidth and high coupling efficiency Si3N4-on-SOI dual-level grating coupler

We propose and experimentally demonstrate fiber-to-chip grating couplers with aligned silicon nitride (Si(3)N(4)) and silicon (Si) grating teeth for wide bandwidths and high coupling efficiencies without the use of bottom reflectors. The measured 1-dB bandwidth is a record 80 nm, and the measured peak coupling efficiency is -1.3 dB, which is competitive with the best Si-only grating couplers. The grating couplers are integrated in a Si(3)N(4) on silicon-on-insulator (SOI) integrated optics platform with aligned waveguides in both the Si(3)N(4) and Si, and we demonstrate a 1 × 4 tunable multiplexer/demultiplexer using the Si(3)N(4)-on-SOI dual-level grating couplers and thermally-tuned Si microring resonators.

Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed, and fabricated in a single step of lithography and etching. An ultralow coupling loss of -1.74 dB (67% coupling efficiency) with a 3 dB bandwidth of 60 nm is experimentally measured.