III-V-on-silicon multi-frequency lasers

12.5 Gbit/s discretely tunable InP-on-silicon filtered feedback laser with sub-nanosecond wavelength switching times

A heterogeneously integrated InP-on-silicon fast tunable filtered feedback laser is demonstrated. The laser device consists of a main Fabry-Pérot cavity connected to an integrated arrayed waveguide grating of which the outputs form external cavities in which semiconductor optical amplifiers can be switched to provide single-mode operation and tunability. The laser can operate at four different wavelengths whereby switching between each wavelength channel is done within one nanosecond. For each wavelength channel 12.5 Gbit/s NRZ-OOK direct modulation is demonstrated. The combination of fast wavelength switching with straightforward wavelength control and high-speed direct modulation characteristics make the demonstrated laser structure very attractive for use in optical packet or burst switching systems.

Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser

A heterogeneously integrated widely tunable III-V-on-silicon ring laser with unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is obtained using the Vernier effect between two ring resonators incorporated in the ring laser cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the clockwise and counterclockwise mode of the ring laser cavity. Unidirectional operation is obtained over the entire tuning range with about 10 dB suppression of the clockwise mode. The laser linewidth is lower than 1 MHz over the entire tuning range, down to 550 kHz in the optimum operation point. The waveguide-coupled output power is above 0 dBm over the entire tuning range.

Experimental demonstration of wavelength domain rogue-free ONU based on wavelength-pairing for TDM/WDM optical access networks

In this study, we propose and experimentally demonstrate a wavelength domain rogue-free ONU based on wavelength-pairing of downstream and upstream signals for time/wavelength division-multiplexed optical access networks. The wavelength-pairing tunable filter is aligned to the upstream wavelength channel by aligning it to one of the downstream wavelength channels. Wavelength-pairing is implemented with a compact and cyclic Si-AWG integrated with a Ge-PD. The pairing filter covered four 100 GHz-spaced wavelength channels. The feasibility of the wavelength domain rogue-free operation is investigated by emulating malfunction of the misaligned laser. The wavelength-pairing tunable filter based on the Si-AWG blocks the upstream signal in the non-assigned wavelength channel before data collision with other ONUs.

Quantum dot SOA/silicon external cavity multi-wavelength laser

We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

Heterogeneously integrated III-V/silicon distributed feedback lasers

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.