Coupling of THz radiation with intervalence band transitions in microcavities

Analytical Expressions for Numerical Characterization of Semiconductors per Comparison with Luminescence

Luminescence is one of the most important characterisation tools of semiconductor materials and devices. Recently, a very efficient analytical set of equations has been applied to explain optical properties of dilute semiconductor materials, with an emphasis on the evolution of peak luminescence gain with temperature and its relation to sample quality. This paper summarizes important steps of the derivation of these expressions that have not been presented before and delivers a theoretical framework that can used to apply exactly solvable Hamiltonians for realistic studies of luminescence in various systems.

Variation of spectral properties of dielectric ionic crystal in the terahertz range due to the polariton absorption

The dispersion equations for polariton waves in dielectric ionic crystal with the absorption are obtained. The self-consistent solutions of the system of Maxwell electromagnetic field equations and the equations of motion of ions have been used. The elastic and absorption properties of the crystal are taken into account in the ion equations of motion. It is shown that the separated equations of motion for positive and negative ions allow obtaining all branches of phonon and polariton spectrum by the example of the ionic crystal of cubic symmetry at the terahertz range. It has been shown that the variation of absorption in the crystal leads to changing of the character of spectrum branch and the polariton velocities.