High power spiral cavity quantum cascade superluminescent emitter

Mid-infrared broadband superluminescent light emitter arrays

Mid-infrared (MIR) room-temperature (RT) and continuous-wave (CW) broadband quantum cascade superluminescent light emitters (QCSLEs) have emerged as ideal broadband light sources for a number of applications of biomedical imaging, security inspection, and gas detection. It is quite challenging to attain a RT-CW output power up to milliwatt level due to the very low efficiency of the spontaneous emission in the intersubband transitions in QCSLEs. In this work, for the first time to the best of our knowledge, a compact light emitter array is realized by integrating several single emitters exhibiting a very high RT-CW power of 2.4 mW, which is attributed to the sufficient low reflectivity provided by the waveguide structure that includes three sections with a short straight part adjacent to a tilted stripe and to a J-shaped waveguide, and the two-phonon resonance QC active structure. This advancement is certainly a big step forward to the applications of broadband light sources towards MIR photonics.

Room-temperature quantum cascade superluminescent light emitters with wide bandwidth and high temperature stability

The realization of room-temperature (RT) mid-infrared (MIR) broadband light sources is fundamentally interesting and highly desirable for a number of applications. Recently, superluminescent light emitters (SLEs) based on quantum cascade (QC) structures have emerged as excellent candidates among mid-infrared broadband light sources. However, it is challenging to achieve RT-QCSLEs due to the very low efficiency of the spontaneous emission in the intersubband transitions. Here, we demonstrate the realization of a set of ~5 μm RT-SLEs under continuous wave (CW) or quasi-CW (10% duty circle) operation by using a two-phonon resonant QC active region and monolithic integrated waveguide structures. In addition, with the design of an inclined tapered cavity, the SLEs exhibit high milliwatt power, large spectral width of more than 200 cm^-1 and good temperature characteristic. These demonstrated results are believed to be a big step forward to the applications of broadband MIR semiconductor light sources.

Near-infrared and mid-infrared semiconductor broadband light emitters

Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications, especially for optical coherence tomography systems. Although near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications, the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such devices. Owing to the relatively weak amplified spontaneous emission, as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures, it is even more challenging to obtain desirable mid-infrared broadband light emitters. There have been great efforts in the past 20 years to pursue high-efficiency broadband optical gain and very low reflectivity in waveguide structures, which are two key factors determining the performance of broadband light emitters. Here we describe the realization of a high continuous wave light power of >20 mW and broadband width of >130 nm with near-infrared broadband light emitters and the first mid-infrared broadband light emitters operating under continuous wave mode at room temperature by employing a modulation p-doped InGaAs/GaAs quantum dot active region with a 'J'-shape ridge waveguide structure and a quantum cascade active region with a dual-end analogous monolithic integrated tapered waveguide structure, respectively. This work is of great importance to improve the performance of existing near-infrared optical coherence tomography systems and describes a major advance toward reliable and cost-effective mid-infrared imaging and sensing systems, which do not presently exist due to the lack of appropriate low-coherence mid-infrared semiconductor broadband light sources.