100 Gbit/s WDM transmission at 2 µm: transmission studies in both low-loss hollow core photonic bandgap fiber and solid core fiber

Mid-infrared integrated electro-optic modulators: a review

Integrated mid-infrared (MIR) photonics have various applications in optical fiber communication, spectral detection and identification, free-space communication, and light detection and ranging, etc. The MIR electro-optic (EO) modulator, which is one of the key components of MIR integrated photonic systems, has attracted a lot of research interests. In this paper, we review the reported integrated MIR EO modulators based on different modulation mechanisms and material platforms. The recent research progresses and challenges of MIR EO modulators are presented and discussed. The unique advantages and the corresponding applications of each type of MIR modulators are summarized as well. In the end, we provide our perspectives of a few areas in integrated MIR modulators that are worthy for research attention in future.

Silicon photonic flat-top WDM (de)multiplexer based on cascaded Mach-Zehnder interferometers for the 2 µm wavelength band

The 2 µm wavelength band has proven to be a promising candidate for the next communication window. Wavelength-division multiplexing (WDM) transmission at 2 µm can greatly increase the capacity of optical communication systems. Here, we experimentally demonstrate a high-performance silicon photonic flat-top 8-channel WDM (de)multiplexer based on cascaded Mach-Zehnder interferometers for the 2 µm wavelength band. A three-stage-coupler scheme is utilized to provide passbands and reduce channel crosstalk, and 11 thermo-optic phase shifters have allowed active compensation of waveguide phase errors. The fabricated device shows low insertion loss (< 0.9 dB), channel crosstalk (< 20.6 dB) and 1-dB bandwidth of 2.3 nm for operating wavelength ranging from 1955nm to 1985nm. The demonstrated (de)multiplexer could potentially be used for WDM optical data communication in the 2 µm spectral band.

Super-broadband on-chip continuous spectral translation unlocking coherent optical communications beyond conventional telecom bands

Today's optical communication systems are fast approaching their capacity limits in the conventional telecom bands. Opening up new wavelength bands is becoming an appealing solution to the capacity crunch. However, this ordinarily requires the development of optical transceivers for any new wavelength band, which is time-consuming and expensive. Here, we present an on-chip continuous spectral translation method that leverages existing commercial transceivers to unlock the vast and currently unused potential new wavelength bands. The spectral translators are continuous-wave laser pumped aluminum gallium arsenide on insulator (AlGaAsOI) nanowaveguides that provide a continuous conversion bandwidth over an octave. We demonstrate coherent transmission in the 2-μm band using well-developed conventional C-band transmitters and coherent receivers, as an example of the potential of the spectral translators that could also unlock communications at other wavelength bands. We demonstrate 318.25-Gbit s-1 Nyquist wavelength-division multiplexed coherent transmission over a 1.15-km hollow-core fibre using this approach. Our demonstration paves the way for transmitting, detecting, and processing signals at wavelength bands beyond the capability of today's devices.

Performance Optimization of Holmium Doped Fiber Amplifiers for Optical Communication Applications in 2–2.15 μm Wavelength Range

In this paper, we address the performance optimization of Holmium doped fiber amplifier (HDFA) for optical communications in 2–2.15 μm wavelength range based on a single in-band forward pump source. The performance of the HDFA is analyzed with the help of theoretical simulations by considering an optimized length of Holmium doped fiber (HDF), doping concentration of Ho3+, and pump power. The impact of signal wavelength and power on gain, amplified spontaneous emission (ASE) noise, and noise figure (NF) of the amplifier is investigated. Furthermore, we investigate the variations in the gain of the amplifier, its output power, and NF by varying the power and wavelength of the pump source. After optimizing the parameters of the amplifier, the peak gain observed is around 56.5 dB, the 3 dB saturated output power obtained is 33.3 dBm, and the output power is 3 W at signal wavelength of 2.0321 μm for HDF having an optimized length of 12 m and pump power of 3.5 W. Minimum NF of around 8.2 dB is observed at 2.0321 μm for signal power of −5 dBm. The impact of ion-ion interaction on the performance of HDFA is also investigated. A reduction of 24.2 dB and 0.051 W is observed in peak gain and output power of HDFA, respectively by considering the ion-ion interaction.

Silicon photonic arrayed waveguide grating with 64 channels for the 2 µm spectral range

Driven by the demand to extend optical fiber communications wavelengths beyond the C + L band, the 2 µm wave band has proven to be a promising candidate. Extensive efforts have been directed into developing high-performance and functional photonic devices. Here we report an integrated silicon photonic arrayed waveguide grating (AWG) fabricated in a commercial foundry. The device has 64 channels with a spacing of approximately 50 GHz (0.7 nm), covering the bandwidth from 1967 nm to 2012 nm. The on-chip insertion loss of the AWG is measured to be approximately 5 dB. By implementing a TiN metal layer, the AWG spectrum can be thermally tuned with an efficiency of 0.27 GHz/mW. The device has a very compact configuration with a footprint of 2.3 mm × 2 mm. The demonstrated AWG can potentially be used for dense wavelength division multiplexing in the 2 µm spectral band.

Gain-switched dual frequency comb at 2 µm

This article shows a dual frequency comb in the 2 µm wavelength region using mutually injection locked gain-switched semiconductor lasers. Strained InGaAs multi-quantum-well discrete mode lasers and gain switching were used to generate two optical frequency combs with repetition rates of 2 GHz and 2.0001 GHz respectively, centred at 2.002 µm. Each optical comb spanned approximately 100 GHz. Through mutual injection locking to an edge comb line common in both combs, a phase locked dual frequency comb was demonstrated with 44 beating tones unique to single comb line pair interactions. This scheme allows for the comb information to be compressed into a 5 MHz detection bandwidth and captured with millisecond acquisition times, which could be of benefit to a number of sensing applications.

Mo:BiVO4 Nanoparticles-Based Optical Modulator and Its Application in a 2-μm Pulsed Laser

Mo:BiVO4 nanoparticles were employed as an optical modulator in a Q-switched all-solid-state Tm:YAP laser for the first time. The nonlinear optical parameters of Mo:BiVO4 nanoparticles in the 2-μm region were characterized by measuring nonlinear transmission. Saturation intensity was 718 MW/cm2, and the modulation depth was 12.3%. A stable pulse sequence was acquired with a 70.08 kHz maximum repetition rate and an 821 ns pulse width. The maximum output average power was 153 mW, corresponding to 2.18 μJ single pulse energy and 2.67 W peak power. Although the response wavelength of Mo:BiVO4 is in visible light region, our experimental results demonstrates that a saturable absorption effect for wavelengths much longer than visible light (2 μm wavelength) is still possible due to sub-bandgap absorption. Therefore, we experimentally proved that Mo:BiVO4 nanoparticles are a great candidate for use as an optical modulator of a 2-μm pulsed laser.

10 GHz regeneratively mode-locked thulium fiber laser with a stabilized repetition rate

GHz pulsed thulium-doped fiber laser with stabilized repetition rate can enable a wide range of applications. By employing regenerative mode-locking and cavity stabilization technique, we have for the first time demonstrated a 10 GHz polarization-maintaining thulium-doped fiber laser, which has a long-term repetition-rate stabilization and picosecond timing-jitter. In our experiment, a RF circuitry is designed to extract the 10 GHz longitudinal clock signal so that stable regenerative mode-locking is achieved. A piezo actuator-based phase-lock-loop is used to lock the regeneratively mode-locked pulses to a local reference synthesizer. The regeneratively mode-locked pulses with picosecond pulse width exhibit a high super-mode suppression ratio of 60 dB. In addition, the repetition rate of the laser shows good long-term stability with a variation of 8 Hz in 8 hours, corresponding to a cavity free spectral range fluctuation of less than 16 mHz. Meanwhile, the Allan deviation of the stabilized 10 GHz regeneratively mode-locked pulses is measured to be as low as 2 × 10^-12 over 1000 s average time, which is only limited by the stability of the reference synthesizer. Such an ultra-stable 10 GHz pulsed thulium fiber laser may find potential application in 2 µm optical communication, material processing and spectroscopy.

Surface plasmon enhanced GeSn photodetectors operating at 2 µm

Au-hole array and Au-GeSn grating structures were designed and incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic structures are beneficial for effective optical confinement near the surface due to surface plasmon resonance (SPR), contributing to an enhanced responsivity. The responsivity enhancement for Au hole-array structure is insensitive to the polarization direction, while the enhancement for Au-GeSn grating structure depends on the polarization direction. The responsivity for GeSn photodetector with Au hole-array structure has ∼50% reinforcement compared with reference photodetector. On the other hand, Au-GeSn grating structure benefits a 3× enhanced responsivity of 0.455 A/W at 1.5V under TM-polarized illumination. The achieved responsivity is among the highest values for GeSn photodetectors operating at 2 µm. The plasmonic GeSn photodetectors in this work offer an alternative solution for high-efficiency photo detection, manifesting their great potentials as candidates for 2 µm optical communication and other emerging applications.

Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications

High speed photodetectors operating at a telecommunication band (from 1260 to 1625 nm) have been well studied with the development of an optical fiber communication system. Recent innovations of photonic systems have raised new requirements on the bandwidth of photodetectors with cutoff wavelengths from extended short wavelength infrared (eSWIR) to long wavelength infrared (LWIR). However, the frequency response performance of photodetectors in these longer wavelength bands is less studied, and the performances of the current high-speed photodetectors in these bands are still not comparable with those in the telecommunication band. In this paper, technical routes to achieve high response speed performance of photodetectors in the extended short wavelength infrared/mid wavelength infrared/long wavelength infrared (eSWIR/MWIR/LWIR) band are discussed, and the state-of-the-art performances are reviewed.

Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm² at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×10¹⁰ cm·Hz^1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.

Tri-layer gradient and polarization-selective vertical couplers for interlayer transition

We demonstrate and optimize a tri-layer vertical coupler for a silicon nitride (Si₃N₄) multilayer platform operating at a 2 µm band. The large spacing between the topmost and bottommost layers of a gradient structure enables ultra-low crossing loss and interlayer crosstalk without affecting the efficiency interlayer transition. We achieve a 0.31 dB transition loss, ultra-low multi-layer crosstalk of -59.3 dB at a crossing angle of 90° with an interlayer gap of 2300 nm at 1950nm. With width optimization of this structure, the fabrication tolerances toward lateral misalignment of two stages in this coupler have increased 61% and 56%, respectively. We also propose a vertical coupler, based on this design, with mode selectivity and achieve an extinction ratio of < 15 dB for wavelengths in the 1910-1990 range. Meanwhile, a multi-layer interlaced AWGs centered at 1950nm and based on vertical coupler has been demonstrated. The proposed vertical couplers exhibit potential for application in large-scale photonic-integrated circuits and broadly in photonic devices.

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm² at -1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at -5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H₂O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.

Si-rich Si nitride waveguides for optical transmissions and toward wavelength conversion around 2 μm

We show that subwavelength Si-rich nitride waveguides efficiently sustain high-speed transmissions at 2 μm. We report the transmission of a 10 Gbit/s signal over 3.5 cm with negligible power penalty. Parametric conversion in the pulsed pump regime is also demonstrated using the same waveguide structure with an efficiency as high as -18  dB.

Hollow-core conjoined-tube fiber for penalty-free data transmission under offset launch conditions

Three types of hollow-core fibers, i.e., photonic-bandgap fiber, negative-curvature fiber, and conjoined-tube fiber, are compared in terms of data transmission performance. Their group velocity dispersions and group indices are measured in detail by using low-coherence interferometry. Whilst all three fibers show good performance with an optimized central launch, they behave differently under offset launch for 10 Gbit/s on-off keying transmission. We use a Q²-factor analysis method to gain insight into the data transmission over a hollow-core fiber. The low-loss, low-intermodal crosstalk conjoined-tube fiber shows great resilience to bending and offset launch compared to the other two hollow-core fibers, enabling genuine penalty-free data transmission in realistic environments.

20 GHz actively mode-locked thulium fiber laser

A high repetition-rate actively mode-locked thulium fiber laser is demonstrated where an electro-optic lithium niobate phase modulator is used to synchronize the longitudinal modes in the cavity. The repetition rate of the actively mode-locked laser is tunable from 14.6 MHz to 19 GHz, where the 19 GHz pulses exhibit a super-mode suppression ratio of 46 dB. Furthermore, the output pulse width could be manipulated through finely controlling the detuning frequency or repetition rate. We have also experimentally observed rational harmonic mode-locking in the laser and obtained 14 GHz and 21 GHz repetition rate pulses using a 7 GHz modulating signal. To the best of our knowledge, we have improved the repetition-rate of actively mode-locked thulium fiber laser by more than one order of magnitude. Such a high repetition source can be readily synchronized to a master clock, which makes it very suitable for high speed optical data processing, communication and remote sensing.

Demonstration of High-Speed Optical Transmission at 2 µm in Titanium Dioxide Waveguides

We demonstrate the transmission of a 10-Gbit/s optical data signal in the 2 µm waveband into titanium dioxide waveguides. Error-free transmissions have been experimentally achieved taking advantage of a 23-dB insertion loss fiber-to-fiber grating-based injection test-bed platform.

High speed single-wavelength modulation and transmission at 2 μm under bandwidth-constrained condition

The 2-μm optical band has gained much attention recently due to its potential applications in optical fiber communication systems. One constraint in this wavelength region is that the electrical bandwidth of components like modulators and photodetectors is limited by the immature manufacturing technologies. Here we experimentally demonstrated the high-speed signal generation and transmission under bandwidth-constrained scenario at 2-μm. It is enabled by the direct-detection optical filter bank multicarrier (FBMC) modulation technique with constant amplitude zero autocorrelation (CAZAC) equalization. We achieved a single wavelength 80 Gbit/s data rate using the 16-QAM FBMC modulation format which is the highest single channel bit rate at 2-μm according to our best knowledge. The signal is transmitted through a 100m-long solid-core fiber designed for single-mode transmission at 2-μm. The measured bit error rates of the signals are below the forward error correction limit of 3.8 × 10^-3, and the 100m-fiber transmission brings negligible penalty.

Gain-switched monolithic fiber laser with ultra-wide tuning range at 2 μm

We demonstrate a gain-switched thulium-doped fiber laser (TDFL) built in an all-fiber format producing nanosecond pulses with variable wavelength in the 2 μm waveband. The laser features tunable operation in an ultra-wide spectral region of 1765 - 2055 nm (24 THz). The nearly 300 nm tunability doubles the record tuning range of existing gain-switched fiber lasers, and to the best of our knowledge, presents the broadest tuning range that has been reported for a monolithic pulsed rare earth doped fiber laser to date. The TDFL can operate at a repetition rate of 2.5 - 100 kHz with a pulse width as short as ~200 ns. Influences of various system parameters on the laser performance are investigated in detail.

Experimental demonstration of a real-time high-throughput digital DC blocker for compensating ADC imperfections in optical fast-OFDM receivers

Performance degradation induced by the DC components at the output of real-time analogue-to-digital converter (ADC) is experimentally investigated for optical fast-OFDM receiver. To compensate this degradation, register transfer level (RTL) circuits for real-time digital DC blocker with 20GS/s throughput are proposed and implemented in field programmable gate array (FPGA). The performance of the proposed real-time digital DC blocker is experimentally investigated in a 15Gb/s optical fast-OFDM system with intensity modulation and direct detection over 40 km standard single-mode fibre. The results show that the fixed-point DC blocker has negligible performance penalty compared to the offline floating point one, and can overcome the error floor of the fast OFDM receiver caused by the DC components from the real-time ADC output.

High gain holmium-doped fibre amplifiers

We investigate the operation of holmium-doped fibre amplifiers (HDFAs) in the 2.1 µm spectral region. For the first time we demonstrate a diode-pumped HDFA. This amplifier provides a peak gain of 25 dB at 2040 nm with a 15 dB gain window spanning the wavelength range 2030 - 2100 nm with an external noise figure (NF) of 4-6 dB. We also compare the operation of HDFAs when pumped at 1950 nm and 2008 nm. The 1950 nm pumped HDFA provides 41 dB peak gain at 2060 nm with 15 dB of gain spanning the wavelength range 2050 - 2120 nm and an external NF of 7-10 dB. By pumping at the longer wavelength of 2008 nm the gain bandwidth of the amplifier is shifted to longer wavelengths and using this architecture a HDFA was demonstrated with a peak gain of 39 dB at 2090 nm and 15 dB of gain spanning the wavelength range 2050 - 2150 nm. The external NF over this wavelength range was 8-14 dB.

Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits

We present Ge rib waveguide devices fabricated on a Ge-on-insulator (GeOI) wafer as a proof-of-concept Ge mid-infrared photonics platform. Numerical analysis revealed that the driving current for a given optical attenuation in a carrier-injection Ge waveguide device at a 1.95 μm wavelength can be approximately five times smaller than that in a Si device, enabling in-line carrier-injection Ge optical modulators based on free-carrier absorption. We prepared a GeOI wafer with a 2-μm-thick buried oxide layer (BOX) by wafer bonding. By using the GeOI wafer, we fabricated Ge rib waveguides. The Ge rib waveguides were transparent to 2 μm wavelengths and the propagation loss was found to be 1.4 dB/mm, which may have been caused by sidewall scattering. We achieved a negligible bend loss in the Ge rib waveguide, even with a 5 μm bend radius, owing to the strong optical confinement in the GeOI structure. We also formed a lateral p-i-n junction along the Ge rib waveguide to explore the capability of absorption modulation by carrier injection. By injecting current through the lateral p-i-n junction, we achieved optical intensity modulation in the 2 μm band based on the free-carrier absorption in Ge.

Optical side scattering radiometry for high resolution, wide dynamic range longitudinal assessment of optical fibers

Current optical reflectometric techniques used to characterize optical fibers have to trade-off longitudinal range with spatial resolution and therefore struggle to provide simultaneously wide dynamic range (>20dB) and high resolution (<10cm). In this work, we develop and present a technique we refer to as Optical Side Scattering Radiometry (OSSR) capable of resolving discrete and distributed scattering properties of fibers along their length with up to 60dB dynamic range and 5cm spatial resolution. Our setup is first validated on a standard single mode telecoms fiber. Then we apply it to a record-length 11km hollow core photonic band-gap fiber (HC-PBGF) the characterization requirements of which lie far beyond the capability of standard optical reflectometric instruments. We next demonstrate use of the technique to investigate and explain the unusually high loss observed in another HC-PBGF and finally demonstrate its flexibility by measuring a HC-PBGF operating at a wavelength of 2µm. In all of these examples, good agreement between the OSSR measurements and other well-established (but more limited) characterization methods, i.e. cutback loss and OTDR, was obtained.

Dense WDM transmission at 2 μm enabled by an arrayed waveguide grating

We show, for the first time, dense WDM (8×20  Gbit/s) transmission at 2 μm enabled by advanced modulation formats (4-ASK Fast-OFDM) and the development of key components, including a new arrayed waveguide grating (AWGr) at 2 μm. The AWGr shows -12.8±1.78  dB of excess loss with an 18-dB extinction ratio and a thermal tunability of 0.108 nm/°C.