Graphene-assisted Si-InSb thermophotovoltaic system for low temperature applications

Flat-band Friedrich-Wintgen bound states in the continuum based on borophene metamaterials

Many applications involve the phenomenon of a material absorbing electromagnetic radiation. By exploiting wave interference, the efficiency of absorption can be significantly enhanced. Here, we propose Friedrich-Wintgen bound states in the continuum (F-W BICs) based on borophene metamaterials to realize coherent perfect absorption with a dual-band absorption peak in commercially important communication bands. Metamaterials consist of borophene gratings and a borophene sheet that can simultaneously support a Fabry-Perot plasmon resonance and a guided plasmon mode. The formation and dynamic modulation of the F-W BIC can be achieved by adjusting the width or carrier density of the borophene grating, while the strong coupling leads to the anti-crossover behavior of the absorption spectrum. Due to the weak angular dispersion originating from the intrinsic flat-band characteristic of the deep sub-wavelength periodic structure, the proposed plasmonic system exhibits almost no change in wavelength and absorption at large incident angles (within 70 degrees). In addition, we employ the temporal coupled-mode theory including near- and far-field coupling to obtain strong critical coupling, successfully achieve coherent perfect absorption, and can realize the absorption switch by changing the phase difference between the two coherent beams. Our findings can offer theoretical support for absorber design and all-optical tuning.

Near-field radiative heat transfer in multilayered graphene system considering equilibrium temperature distribution

In the present work, the near-field radiative heat transfer of a multilayered graphene system is investigated within the framework of the many-body theory. For the first time, the temperature distribution corresponding to the steady state of the system is investigated. Unique temperature steps are observed near both boundaries of the system, especially in the strong near-field regime. By utilizing the effective radiative thermal conductance, the thermal freedom of heat flux in different regions of the system is analyzed quantitatively, and the cause of various temperature distributions is explained accordingly. To characterize the heat transfer ability of the whole system, we evaluate the system with two heat transfer coefficients (HTC), transient heat transfer coefficient (THTC), and steady heat transfer coefficient (SHTC). A unique many-body enhancement is observed, which causes a red-shift of resonance peak corresponding to graphene surface plasmon polaritons. Furthermore, a three-body enhancement of SHTC emerges thanks to the relay effect and the complexity of the system. The regime of heat transport can be tuned by changing the chemical potentials of graphene and undergoes a transition from diffusive to quasi-ballistic transport in the strong near-field regime.

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.

Observing of the super-Planckian near-field thermal radiation between graphene sheets

Thermal radiation can be substantially enhanced in the near-field scenario due to the tunneling of evanescent waves. Monolayer graphene could play a vital role in this process owing to its strong infrared plasmonic response, however, which still lacks an experimental verification due to the technical challenges. Here, we manage to make a direct measurement about plasmon-mediated thermal radiation between two macroscopic graphene sheets using a custom-made setup. Super-Planckian radiation with efficiency 4.5 times larger than the blackbody limit is observed at a 430-nm vacuum gap on insulating silicon hosting substrates. The positive role of graphene plasmons is further confirmed on conductive silicon substrates which have strong infrared loss and thermal emittance. Based on these, a thermophotovoltaic cell made of the graphene–silicon heterostructure is lastly discussed. The current work validates the classic thermodynamical theory in treating graphene and also paves a way to pursue the application of near-field thermal management.

Though monolayer graphene has the potential to be used in near-field thermal management applications, no experimental verification has been provided to date. Here, the authors directly measure plasmon-enhanced near-field heat transfer between graphene sheets on intrinsic silicon substrates.

High-injection effects in near-field thermophotovoltaic devices

In near-field thermophotovoltaics, a substantial enhancement of the electrical power output is expected as a result of the larger photogeneration of electron-hole pairs due to the tunneling of evanescent modes from the thermal radiator to the photovoltaic cell. The common low-injection approximation, which considers that the local carrier density due to photogeneration is moderate in comparison to that due to doping, needs therefore to be assessed. By solving the full drift-diffusion equations, the existence of high-injection effects is studied in the case of a GaSb p-on-n junction cell and a radiator supporting surface polaritons. Depending on doping densities and surface recombination velocity, results reveal that high-injection phenomena can already take place in the far field and become very significant in the near field. Impacts of high injection on maximum electrical power, short-circuit current, open-circuit voltage, recombination rates, and variations of the difference between quasi-Fermi levels are analyzed in detail. By showing that an optimum acceptor doping density can be estimated, this work suggests that a detailed and accurate modeling of the electrical transport is also key for the design of near-field thermophotovoltaic devices.

Radiative heat transfer exceeding the blackbody limit between macroscale planar surfaces separated by a nanosize vacuum gap

Using Rytov's fluctuational electrodynamics framework, Polder and Van Hove predicted that radiative heat transfer between planar surfaces separated by a vacuum gap smaller than the thermal wavelength exceeds the blackbody limit due to tunnelling of evanescent modes. This finding has led to the conceptualization of systems capitalizing on evanescent modes such as thermophotovoltaic converters and thermal rectifiers. Their development is, however, limited by the lack of devices enabling radiative transfer between macroscale planar surfaces separated by a nanosize vacuum gap. Here we measure radiative heat transfer for large temperature differences (∼120 K) using a custom-fabricated device in which the gap separating two 5 × 5 mm² intrinsic silicon planar surfaces is modulated from 3,500 to 150 nm. A substantial enhancement over the blackbody limit by a factor of 8.4 is reported for a 150-nm-thick gap. Our device paves the way for the establishment of novel evanescent wave-based systems.

Evanescent coupling between surfaces separated by a distance smaller than the thermal wavelength can lead to radiative heat transfer greater than the blackbody limit. Here, the authors demonstrate this between two macroscopic-scale surfaces, paving the way to harnessing the effect in thermal devices.

Hyperbolic metamaterial-based near-field thermophotovoltaic system for hundreds of nanometer vacuum gap

Artificially designed hyperbolic metamaterial (HMM) possesses extraordinary electromagnetic features different from those of naturally existing materials. In particular, the dispersion relation of waves existing inside the HMM is hyperbolic rather than elliptical; thus, waves that are evanescent in isotropic media become propagating in the HMM. This characteristic of HMMs opens a novel way to spectrally control the near-field thermal radiation in which evanescent waves in the vacuum gap play a critical role. In this paper, we theoretically investigate the performance of a near-field thermophotovoltaic (TPV) energy conversion system in which a W/SiO₂-multilayer-based HMM serves as the emitter at 1000 K and InAs works as the TPV cell at 300 K. By carefully designing the thickness of constituent materials of the HMM emitter, the electric power of the near-field TPV devices can be increased by about 6 times at 100-nm vacuum gap as compared to the case of the plain W emitter. Alternatively, in regards to the electric power generation, HMM emitter at experimentally achievable 100-nm vacuum gap performs equivalently to the plain W emitter at 18-nm vacuum gap. We show that the enhancement mechanism of the HMM emitter is due to the coupled surface plasmon modes at multiple metal-dielectric interfaces inside the HMM emitter. With the minority carrier transport model, the optimal p-n junction depth of the TPV cell has also been determined at various vacuum gaps.

Design of emitter structures based on resonant perfect absorption for thermophotovoltaic applications

We report a class of thermophotovoltaic emitter structures built upon planar films that support resonant modes, known as perfectly-absorbing modes, that facilitate an exceptional optical response for selective emission. These planar structures have several key advantages over previously-proposed designs for TPV applications: they are simple to fabricate, are stable across a range of temperatures and conditions, and are capable of achieving some of the highest spectral efficiencies reported of any class of emitter structure. Utilization of these emitters leads to exceptionally high device efficiencies under low operating temperature conditions, which should open new opportunities for waste heat management. We present a theoretical framework for understanding this performance, and show that this framework can be leveraged as a search algorithm for promising candidate structures. In addition to providing an efficient theoretical methodology for identifying high-performance emitter structures, our methodology provides new insight into underlying design principles and should pave way for future design of structures that are simple to fabricate, temperature stable, and possess exceptional optical properties.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses.