Enhanced nonlinear interaction in a microcavity under coherent excitation

Nonlinear Properties of Ge-rich Si1-xGex Materials with Different Ge Concentrations

Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si_1−xGe_x alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si_1−xGe_x alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si_1−xGe_x waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.

Silicon nanobeam cavity for ultra-localized light-matter interaction

In this work, we theoretically and experimentally demonstrate an unusual air mode silicon nanobeam cavity design with dielectric mirrors. This design combines an extremely strong localization of light-matter interaction in the cavity center and a reduced sensitivity of the resonator wavelength to temperature or top cladding material refractive index variations. The proposed approach allows accurate control of the resonator cavity quality factor combined with flexible choice of the cavity effective mode volume. Q-factors higher than 50,000 have been determined for such cavities and mode volumes smaller than (λ/n)³ were achieved in the investigated configurations. Such a cavity design provides a robust approach to study the hybrid integration of various active materials in the silicon platform, including carbon nanotubes, III-V nanowires, graphene, etc., for light emission, modulation, or detection.

Bi-directional top-hat D-Scan: single beam accurate characterization of nonlinear waveguides

The characterization of a third-order nonlinear integrated waveguide is reported for the first time by means of a top-hat dispersive-scan (D-Scan) technique, a temporal analog of the top-hat Z-Scan. With a single laser beam, and by carrying two counterdirectional nonlinear transmissions to assess the input and output coupling efficiencies, a novel procedure is described leading to accurate measurement of the TPA figure of merit, the effective two-photon absorption (TPA), and optical Kerr (including the sign) coefficients. The technique is validated in a silicon strip waveguide for which the effective nonlinear coefficients are measured with an accuracy of ±10%.

Raman-tailored photonic crystal fiber for telecom band photon-pair generation

We report on the experimental characterization of a novel nonlinear liquid-filled hollow-core photonic crystal fiber for the generation of photon pairs at a telecommunication wavelength through spontaneous four-wave mixing (SFWM). We show that the optimization procedure in view of this application links the choice of the nonlinear liquid to the design parameters of the fiber, and we give an example of such an optimization at telecom wavelengths. Combining the modeling of the fiber and classical characterization techniques at these wavelengths, we identify for the chosen fiber and liquid combination SFWM phase-matching frequency ranges with no Raman scattering noise contamination. This is a first step toward obtaining a telecom band fibered photon-pair source with a high signal-to-noise ratio.