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Cheng F, Zhang J, Sun Y, Zhuo N, Zhai S, Liu J, Wang L, Liu S, Liu F. High performance distributed feedback quantum cascade laser emitting at λ∼6.12um. OPTICS EXPRESS 2022; 30:5848-5854. [PMID: 35209538 DOI: 10.1364/oe.450234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
Distributed feedback quantum cascade lasers emitting at a wavelength of 6.12 µm are reported. Benefitted from the optimized materials epitaxy and the modified bound to continuum transition active region design along with three pairs of phonon scattering, high device performance is achieved. For a 2-mm-long, 8.4-µm-wide device, the threshold current is as low as 130 mA, the corresponding threshold current density is only 0.77 kA/cm2, and the optical output power is 69 mW at 20 °C in continuous wave mode. The temperature of continuous wave operation can reach 100 °C, where the optical output power is still more than 8 mW. In addition, it maintains a stable single mode operation from 20 to 100 °C without mode hopping, corresponding to a total wavelength shift of 41 nm. Such low-threshold quantum cascade lasers are highly beneficial to portable and highly integrated system sensor applications.
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Cheng F, Zhang J, Guan Y, Yang P, Zhuo N, Zhai S, Liu J, Wang L, Liu S, Liu F, Wang Z. Ultralow power consumption of a quantum cascade laser operating in continuous-wave mode at room temperature. OPTICS EXPRESS 2020; 28:36497-36504. [PMID: 33379742 DOI: 10.1364/oe.405528] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2020] [Accepted: 10/20/2020] [Indexed: 06/12/2023]
Abstract
We report an ultralow power consumption of a quantum cascade laser (QCL) emitting at λ ∼ 4.6 µm operating in continuous-wave mode at room temperature. The ultralow power consumption is achieved by using a high gain active region and shortening the device size. For the device with a 0.5-mm-long cavity and 3.2-µm-wide ridge, the threshold power consumption is as low as 0.26 W with an optical output power of 12.6 mW at 10 °C in continuous-wave mode, which represents the world's most advanced level. Furthermore, the threshold power consumption varies linearly with the operating temperature, where the linear change rate of 2.3 mW/K from 10 to 40 °C is low. As a result, the devices also show low threshold power consumption values of 0.33 W even at 40 °C in continuous-wave mode with an optical output power of 6.1 mW. In addition, the lasers can maintain a single-mode operation due to the short cavity length even if no distributed feedback grating is applied.
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Yoo KM, Midkiff J, Rostamian A, Chung CJ, Dalir H, Chen RT. InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor. ACS Sens 2020; 5:861-869. [PMID: 32129061 DOI: 10.1021/acssensors.0c00180] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Mid-infrared (mid-IR) absorption spectroscopy based on integrated photonic circuits has shown great promise in trace-gas sensing applications in which the mid-IR radiation directly interacts with the targeted analyte. In this paper, considering monolithic integrated circuits with quantum cascade lasers (QCLs) and quantum cascade detectors (QCDs), the InGaAs-InP platform is chosen to fabricate passive waveguide gas sensing devices. Fully suspended InGaAs waveguide devices with holey photonic crystal waveguides (HPCWs) and subwavelength grating cladding waveguides (SWWs) are designed and fabricated for mid-infrared sensing at λ = 6.15 μm in the low-index contrast InGaAs-InP platform. We experimentally detect 5 ppm ammonia with a 1 mm long suspended HPCW and separately with a 3 mm long suspended SWW, with propagation losses of 39.1 and 4.1 dB/cm, respectively. Furthermore, based on the Beer-Lambert infrared absorption law and the experimental results of discrete components, we estimated the minimum detectable gas concentration of 84 ppb from a QCL/QCD integrated SWW sensor. To the best of our knowledge, this is the first demonstration of suspended InGaAs membrane waveguides in the InGaAs-InP platform at such a long wavelength with gas sensing results. Also, this result emphasizes the advantage of SWWs to reduce the total transmission loss and the size of the fully integrated device's footprint by virtue of its low propagation loss and TM mode compatibility in comparison to HPCWs. This study enables the possibility of monolithic integration of quantum cascade devices with TM polarized characteristics and passive waveguide sensing devices for on-chip mid-IR absorption spectroscopy.
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Affiliation(s)
- Kyoung Min Yoo
- Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, United States
| | - Jason Midkiff
- Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, United States
| | - Ali Rostamian
- Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, United States
| | - Chi-jui Chung
- Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, United States
| | - Hamed Dalir
- Omega Optics Inc., 8500 Shoal Creek Blvd., Bldg. 4, Suite 200, Austin, Texas 78757, United States
| | - Ray T. Chen
- Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, United States
- Omega Optics Inc., 8500 Shoal Creek Blvd., Bldg. 4, Suite 200, Austin, Texas 78757, United States
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Jia ZW, Wang LJ, Zhang JC, Liu FQ, Zhou YH, Wang DB, Jia XF, Zhuo N, Liu JQ, Zhai SQ, Wang ZG. High Efficiency, Low Power-Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth. NANOSCALE RESEARCH LETTERS 2017; 12:281. [PMID: 28423867 PMCID: PMC5395505 DOI: 10.1186/s11671-017-2064-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2017] [Accepted: 04/07/2017] [Indexed: 06/07/2023]
Abstract
Very low power-consumption distributed feedback (DFB) quantum cascade lasers (QCLs) at the wavelength around 4.9 μm were fabricated by conventional process without lateral regrowth of InP:Fe or using sidewall grating. Benefitted from the optimized materials and low waveguide loss, very low threshold current density of 0.5 kA/cm2 was obtained for a device with cavity length of 2 mm. Combined with the partial-high-reflection coating, the 1-mm-long DFB QCL achieved low power-consumption continuous wave (CW) operation up to 105 °C. The CW threshold power-consumptions were 0.72 and 0.78 W at 15 and 25 °C, respectively. The maximum CW output power was over 110 mW at 15 °C and still more than 35 mW at 105 °C. At 15 °C, wall-plug efficiency of 5.5% and slope efficiency of 1.8 W/A were deduced, which were very high for low power-consumption DFB QCLs.
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Affiliation(s)
- Zhi-Wei Jia
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Li-Jun Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Jin-Chuan Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
| | - Feng-Qi Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Yu-Hong Zhou
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Dong-Bo Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Xue-Feng Jia
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Ning Zhuo
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
| | - Jun-Qi Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
| | - Shen-Qiang Zhai
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
| | - Zhan-Guo Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083 China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408 China
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