High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

Possibility of CO2 laser-pumped multi-millijoule-level ultrafast pulse terahertz sources

In the last decade, intense research has been witnessed on developing compact, terahertz (THz) driven electron accelerators, producing electrons with a sub-MeV-few tens of MeV energy. Such economical devices could be used in scientific and material research and medical treatments. However, until now, the extremely high-energy THz pulses needed by the THz counterparts of the microwave accelerators were generated by optical rectification (OR) of ultrafast Ti:sapphire or Yb laser pulses. These lasers, however, are not very effective. Because of this, we use numerical simulations to investigate the possibility of generating high-energy THz pulses by the OR of pulses produced by CO2 lasers, which can have high plug-in efficiency. The results obtained supposing optical rectification (OR) in GaAs demonstrate that consideration of the self-phase-modulation (SPM) and the second-harmonic-generation (SHG) processes is indispensable in the design of CO2 laser-based THz sources. More interestingly, although these two processes hinder achieving high laser-to-THz conversion efficiency, they can still surpass the 1.5% value, ensuring high system efficiency and making the CO2 laser OR system a promising THz source. Our finding also has important implications for other middle-infrared laser-pumped OR-based THz sources.

Tilted pulse front pumping techniques for efficient terahertz pulse generation

Optical rectification of femtosecond laser pulses has emerged as the dominant technique for generating single- and few-cycle terahertz (THz) pulses. The advent of the tilted pulse front pumping (TPFP) velocity matching technique, proposed and implemented two decades ago, has ushered in significant advancements of these THz sources, which are pivotal in the realm of THz pump-probe and material control experiments, which need THz pulses with microjoule energies and several hundred kV/cm electric field strengths. Furthermore, these THz sources are poised to play a crucial role in the realization of THz-driven particle accelerators, necessitating millijoule-level pulses with tens of MV/cm electric field strengths. TPFP has enabled the efficient velocity matching in lithium niobate crystals renowned for their extraordinary high nonlinear coefficient. Moreover, its adaptation to semiconductor THz sources has resulted in a two-hundred-times enhancement in conversion efficiency. In this comprehensive review, we present the seminal achievements of the past two decades. We expound on the conventional TPFP setup, delineate its scaling limits, and elucidate the novel generation TPFP configurations proposed to surmount these constraints, accompanied by their preliminary outcomes. Additionally, we provide an in-depth analysis of the THz absorption, refractive index, and nonlinear coefficient spectra of lithium niobate and widely used semiconductors employed as THz generators, which dictate their suitability as THz sources. We underscore the far-reaching advantages of tilted pulse front pumping, not only for LN and semiconductor-based THz sources but also for selected organic crystal-based sources and Yb-laser-pumped GaP sources, previously regarded as velocity-matched in the literature.

Increasing bandwidth of Cherenkov-type terahertz emitters by free carrier generation

We found experimentally that Cherenkov-type terahertz radiation produced by optical rectification of ultrashort laser pulses in LiNbO3 can experience strong spectral broadening in the regime of multiphoton laser absorption. The broadening is attributed to the terahertz emission from a surge current of the optically generated carriers. The effect can be used to improve the bandwidth of optical-to-terahertz converters based on optical rectification.

100-mJ, 100-W cryogenically cooled Yb:YLF laser

We present a diode-pumped Yb:YLF laser system generating 100-mJ sub-ps pulses at a 1-kHz repetition rate (100 W average power) by chirped-pulse amplification. The laser consists of a cryogenically cooled 78 K, regenerative, eight-pass booster amplifier seeded by an all-fiber front end. The output pulses are compressed to 980 fs in a single-grating Treacy compressor with a throughput of 89%. The laser will be applied to multi-cycle THz generation and pumping of high average power parametric amplifiers.

Scalable microstructured semiconductor THz pulse sources

In recent years several microstructured lithium niobate THz pulse source were suggested for high-energy applications. Two types of those, the reflective and the transmissive nonlinear slab are adopted here for semiconductors. These new sources are scalable both in THz energy and size. Furthermore, they can outperform the already demonstrated contact grating source in diffraction and THz generation efficiency. Compared to the lithium niobate sources, they are more feasible, thanks to the easier manufacturing and the longer pump wavelength. They can produce intense, nearly single-cycle THz pulses at higher frequencies. With 20 mJ pumping at 1.8 µm wavelength, 45 µJ THz energy, and 17 MV/cm focused peak electric field can be expected at 3 THz phase matching frequency from the transmissive nonlinear echelon slab setup consisting of a 4 mm thick structured plan-parallel gallium phosphide crystal.

Millijoule 265 fs Tm:YAP regenerative amplifier for driving ultrabroad band collinear mid-infrared optical parametric amplifiers

Generation of 265-fs millijoule pulses at 1940 nm from a solid-state regenerative amplifier has been demonstrated. The amplification chain consists of a thulium-doped fluoride (Tm:ZBLAN) fiber oscillator, a two stage Tm:ZBLAN fiber preamplifier, and a regenerative amplifier with a thermoelectrically cooled thulium-doped yttrium aluminium perovskite crystal. The newly developed light source is used for pumping an ultra broadband mid-infrared optical parametric amplifier based on a gallium selenide crystal. The 2.5-4 µm range of a multioctave supercontinuum, generated in a polarization-maintaining ZBALN fiber, is used as the MIR seed. The amplified signal in combination with the corresponding idler pulses spread from 2.5 to 10 µm in a collinear geometry.

Measurement of four-photon absorption in GaP and ZnTe semiconductors

Intensity-dependent effective four-photon absorption (4PA) coefficients in GaP and ZnTe semiconductors were measured by the z-scan method using pump pulses of 1.75 µm wavelength, 135 fs duration, and up to 500 GWcm^-2 intensity. A nonlinear pulse propagation model, including linear dispersion and 4PA was used to obtain the 4PA coefficients from measurements. The intensity-dependent effective 4PA coefficients vary from 2.6 × 10^-4 to 65 × 10^-4 cm⁵GW^-3 in GaP, and from 3.5 × 10^-4 to 9.1 × 10^-4 cm⁵GW^-3 in ZnTe. The anisotropy in 4PA was shown in GaP. The knowledge of 4PA coefficients is important for the design of semiconductor photonics devices.

Highly efficient Cherenkov-type terahertz generation by 2-μm wavelength ultrashort laser pulses in a prism-coupled LiNbO3 layer

Terahertz generation by optical rectification of femtosecond laser pulses propagating in a 40-μm thick LiNbO ₃ layer attached to an output Si prism has been experimentally investigated for different laser wavelengths from 800 to 2100 nm. For longer wavelengths, the saturation of the optical-to-terahertz conversion efficiency has been observed at higher laser pulse energies, thus enabling higher efficiencies. In particular, record high conversion efficiency of 1.3% has been achieved with 30-μJ laser pulse energy at 2100 nm.

Scalable terahertz generation by large-area optical rectification at 80 TW laser power

We demonstrate high-energy terahertz generation from a large-aperture (75-mm diameter) lithium niobate wafer by using a femtosecond laser with energy up to 2 J. This scheme utilizes optical rectification in a bulk lithium niobate crystal, where most terahertz energy is emitted from a thin layer of the rear surface. Despite its simple setup, this scheme can yield 0.19 mJ of terahertz energy with laser-to-terahertz conversion efficiencies of ∼10^-4, about 3 times better than ZnTe when pumped at 800 nm. The experimental setup is upscalable for multimillijoule terahertz generation with petawatt laser pumping.

Broadband and narrowband laser-based terahertz source and its application for resonant and non-resonant excitation of antiferromagnetic modes in NiO

A versatile table-top high-intense source of terahertz radiation, enabling to generate pulses of both broadband and narrowband spectra with a tunable frequency up to 3 THz is presented. The terahertz radiation pulses are generated by optical rectification of femtosecond pulses of Cr:forsterite laser setup in nonlinear organic crystal OH1. Electric field strengths of broadband and narrowband terahertz pulses were achieved close to 20 MV/cm and more than 2 MV/cm, correspondingly. Experiments on excitation of spin subsystem oscillations of an antiferromagnetic NiO were carried out. Selective excitation of 0.42 THz mode was observed for the first time at room temperature by a narrowband terahertz pulses tuned close to mode frequency.

Tilted-pulse-front excitation of strong quasistatic precursors

It was recently predicted [M. I. Bakunov, A. V. Maslov, and M. V. Tsarev, Phys. Rev. A95, 063817 (2017)10.1103/PhysRevA.95.063817] that concurrent processes of optical rectification and multiphoton absorption of an ultrashort laser pulse in an electro-optic crystal can generate a quasistatic electromagnetic precursor propagating ahead of the laser pulse. The electric and magnetic fields in the precursor can exceed the fields in the ordinary terahertz wave generated behind the laser pulse. We propose a way to enhance the precursor's magnitude tremendously, by at least two orders of magnitude, by using tilted-pulse-front excitation technique and higher orders of multiphoton absorption. In particular, we show that a pulse of 500 fs duration and 70 GW/cm² peak intensity from a Yb-doped laser amplifier can generate in a 5-mm-thick LiNbO₃ crystal a 0.5-mm-long precursor with the strengths of the electric and magnetic fields as high as 0.4 MV/cm and 0.13 T, respectively. Strong quasistatic (subterahertz) fields can be a useful tool for particle acceleration, molecular orientation, ultrafast control of magnetic order in matter, and in terahertz streaking techniques.

Efficient terahertz generation in highly nonlinear organic crystal HMB-TMS

We report on generation of strong and broadband terahertz (THz) pulses via collinearly phase-matched optical rectification of near-infrared femtosecond pulses in the organic nonlinear optical HMB-TMS (2-(4-hydroxy-3-methoxystyryl)-3-methylbenzo[d]thiazol-3-ium 2,4,6-trimethylbenzenesulfonate) single crystals which exhibit optimal molecular orientation and large macroscopic optical nonlinearity for efficient THz wave generation. Single-cycle THz pulses with a peak electric field strength of 0.66 MV/cm and a bandwidth from 0.1 to 5.4 THz are achieved from an HMB-TMS crystal with only a 2-mm clear aperture pumped by 1350 nm pulses at moderate fluences. The generated THz energy is about 1 µJ and the corresponding pump-to-THz energy conversion efficiency reaches 0.23%.