Complex effective index in graphene-silicon waveguides

Active Fano resonance switch using dual-layer graphene in an embedded dielectric metasurface

We propose an active optical Fano switch (OFS) based on an embedded dielectric metasurface (EDM) including dual-layer graphene (DLG). An EDM is a dielectric grating overlapped by two cladding layers, and it excites a Fano resonance. DLG is positioned inside the upper cladding layer to maximize light-graphene interaction. Thus, with a small change of the chemical potential (µ_c) of graphene, a resonance wavelength is tuned to switch the OFS on and off. First, a red-parity asymmetric Fano resonance is realized, and a sharp asymmetric lineshape is achieved by controlling the structural parameters of the EDM and the interaction between the Fano resonance and additional weak Fabry-Perot interference for efficient switching. The distance of a peak-to-dip wavelength (Δλ_p-d) and the change of chemical potential (Δµ_c) for switching is analyzed by varying the duty cycle (DC) and grating thickness (t_g) of the EDM. Furthermore, switching contrast as a figure of merit (FoM) is analyzed. With DC of 0.5 and t_g of 70 nm, the OFS requires Δλ_p-d of 7.3 nm and Δµ_c of 0.25 eV. The FoM of 0.97 is achieved. By adjusting the two parameters, the switching condition is tuned. In the case of a blue parity, the effect of the two parameters exhibits a similar trend to that of the red parity. The FoM, however, is lower due to the reversed parity.

Silicon-Based Graphene Electro-Optical Modulators

With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.

Controllable coupling between an ultra-high-Q microtoroid cavity and a graphene monolayer for optical filtering and switching applications

Whispering-gallery-mode optical microresonators have found impactful applications in various areas due to their remarkable properties such as ultra-high quality factor (Q-factor), small mode volume, and strong evanescent field. Among these applications, controllable tuning of the optical Q-factor is vital for on-chip optical modulation and various opto-electronic devices. Here, we report an experimental demonstration with a hybrid structure formed by an ultra-high-Q microtoroid cavity and a graphene monolayer. Thanks to the strong interaction of the evanescent wave with the graphene, the structure allows the Q-factor to be controllably varied in the range of 3.9 × 10⁵ ∼ 6.2 × 10⁷ by engineering optical absorption via changing the gap distance in between. At the same time, a resonant wavelength shift of 32 pm was also observed. Besides, the scheme enables us to approach the critical coupling with a coupling depth of 99.6%. As potential applications in integrated opto-electronic devices, we further use the system to realize a tunable optical filter with tunable bandwidth from 116.5 MHz to 2.2 GHz as well as an optical switch with a maximal extinction ratio of 31 dB and response time of 21 ms.

Enhanced all-optical cavity-tuning using graphene

All-optical tuning of the resonance of an optical cavity is used to realise optical signal-processing including modulation, switching, and signal-routing. The tuning of optical resonance is dictated by the two primary effects induced by optical absorption: charge-carrier-generation and heat-generation. Since these two effects shift the resonance in opposite directions in a pure silicon-on-insulator (SOI) micro-ring resonator as well as in a graphene-on-SOI system, the efficiency and the dynamic range of all-optical resonance-tuning is limited. In this work, in a graphene-oxide-silicon waveguide system, we demonstrate an exceptional resonance-tuning-efficiency of 300 p m/m W (0.055 π/m W), with a large dynamic range of 1.2 n m (0.22 π) from linear resonance to optical bistability. The dynamics of the resonance-tuning indicates that the superior resonance-tuning is due to large linear-absorption-induced thermo-optic effect. Competing free-carrier dispersion is suppressed as a result of the large separation between graphene and the silicon core. This work reveals new ways to improve the performance of graphene-on-waveguide systems in all-optical cavity-tuning, low-frequency all-optical modulation, and switching.

Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects.

Manipulation of extinction features in frequency combs through the usage of graphene

Lately, the integration of two-dimensional materials into semiconductor devices has allowed the modification of their effective index by simply applying a modest voltage (between 0 and 3 volts). In this work, we present a device composed of two evanescently coupled silicon microring resonators where both rings have a graphene layer on top. This design is aimed to produce frequency combs with transmission characteristics controlled upon voltage application to the graphene layer. We numerically analyze the device response as a function of the incident wavelength and applied voltage. The results showed a low input intensity (0.6 GW/cm²) needed and a rapid response time (0.1 μs), in comparison to devices controlled by heat injection.

Design of a graphene-based dual-slot hybrid plasmonic electro-absorption modulator with high-modulation efficiency and broad optical bandwidth for on-chip communication

The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region. By combining the huge light enhancement effect of the dual-slot HPW and graphene's tunable conductivity, we obtain a high-modulation efficiency (ME) of 1.76 dB/μm for the graphene-based dual-slot HPW (higher ME of 2.19 dB/μm can also be obtained). Based upon this promising result, we further design a graphene-based hybrid plasmonic EAM, achieving a modulation depth (MD) of 15.95 dB and insertion loss of 1.89 dB @1.55 μm, respectively, in a total length of only 10 μm, where its bandwidth can reach over 500 nm for keeping MD>15  dB; MD can also be improved by slightly increasing the device length or shrinking the waveguide thickness, showing strong advantages for applying it into on-chip high-performance silicon modulators.

On-chip optical transduction scheme for graphene nano-electro-mechanical systems in silicon-photonic platform

We present a scheme for on-chip optical transduction of strain and displacement of graphene-based nano-electro-mechanical systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit configurations is presented: the Mach-Zehnder interferometer (MZI), the micro-ring resonator, and the ring-loaded MZI. An index sensing based technique using an MZI loaded with a ring resonator with a moderate Q-factor of 2400 can yield a sensitivity of 28  fm/Hz and 6.5×10^-6%/Hz for displacement and strain, respectively. Though any phase-sensitive integrated-photonic device could be used for optical transduction, here we show that optimal sensitivity is achievable by combining resonance with phase sensitivity.

Chirp management in silicon-graphene electro absorption modulators

We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 µm long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10^-3.