UV-sensitive superconducting nanowire single photon detectors for integration in an ion trap

High performance on-chip polarization beam splitter at visible wavelengths based on a silicon nitride small-sized ridge waveguide

Due to sensitive scaling of the wavelength and the visible-light absorption properties with the device dimension, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at the visible wavelengths. In this work, a simple and small polarization beam splitter (PBS) for a broad visible-light band, using a tailored silicon nitride (Si3N4) ridge waveguide, is presented, which is based on the distinct optical distribution of two fundamental orthogonal polarized modes in the ridge waveguide. The bending loss for different bending radii and the optical coupling properties of the fundamental modes for different Si3N4 ridge waveguide configurations are analyzed. A PBS composed of a bending ridge waveguide structure and a triple-waveguide directional coupler was fabricated on the Si3N4 thin film. The TM excitation of the device based on a bending ridge waveguide structure shows a polarization extinction ratio (PER) of ≥ 20 dB with 33 nm bandwidth (624-657 nm) and insertion loss (IL) ≤ 1 dB at the through port. The TE excitation of the device, based on a triple-waveguide directional coupler with coupling efficiency distinction between the TE0 and TM0 modes, shows a PER of ≥ 18 dB with 50 nm bandwidth (580-630 nm) and insertion loss (IL) ≤ 1 dB at the cross port. The on-chip Si3N4 PBS device is found to possess the highest known PER at a visible broadband range and small (43 µm) footprint. It should be useful for novel photonic circuit designs and further exploration of Si3N4 PBSs.

Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout

State readout of trapped-ion qubits with trap-integrated detectors can address important challenges for scalable quantum computing, but the strong rf electric fields used for trapping can impact detector performance. Here, we report on NbTiN superconducting nanowire single-photon detectors (SNSPDs) employing grounded aluminum mirrors as electrical shielding that are integrated into linear surface-electrode rf ion traps. The shielded SNSPDs can be operated at applied rf trapping potentials of up to 54 V_peak at 70 MHz and temperatures of up to 6 K, with a maximum system detection efficiency of 68 %. This performance should be sufficient to enable parallel high-fidelity state readout of a wide range of trapped ion species in typical cryogenic apparatus.

State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector

We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single ^{9}Be^{+} ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46  μs, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pumping. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.

Integrated multi-wavelength control of an ion qubit

Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors^1-4. Trapped atomic ions form the basis of high-fidelity quantum information processors^5,6 and high-accuracy optical clocks⁷. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip^8,9 using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations and quantum state preparation and detection of Sr⁺ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fibre array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated photonic surface-trap fabrication, robust packaging and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way towards the complete, individual control of larger numbers of ions in quantum information processing systems.

Closed-cycle, low-vibration 4 K cryostat for ion traps and other applications

In vacuo cryogenic environments are ideal for applications requiring both low temperatures and extremely low particle densities. This enables reaching long storage and coherence times, for example, in ion traps, essential requirements for experiments with highly charged ions, quantum computation, and optical clocks. We have developed a novel cryostat continuously refrigerated with a pulse-tube cryocooler and providing the lowest vibration level reported for such a closed-cycle system with 1 W cooling power for a <5 K experiment. A decoupling system suppresses vibrations from the cryocooler by three orders of magnitude down to a level of 10 nm peak amplitudes in the horizontal plane. Heat loads of about 40 W (at 45 K) and 1 W (at 4 K) are transferred from an experimental chamber, mounted on an optical table, to the cryocooler through a vacuum-insulated massive 120 kg inertial copper pendulum. The 1.4 m long pendulum allows installation of the cryocooler in a separate, acoustically isolated machine room. At the experimental chamber, we measured the residual vibrations using an interferometric setup. The positioning of the 4 K elements is reproduced to better than a few micrometer after a full thermal cycle to room temperature. Extreme high vacuum on the 10^-15 mbar level is achieved. In collaboration with the Max-Planck-Institut für Kernphysik, such a setup is now in operation at the Physikalisch-Technische Bundesanstalt for a next-generation optical clock experiment using highly charged ions.

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1MΩ), and energy requirements (0.18fJ/μm2,3.24mV/nW).

Continuous-relief diffractive microlenses for laser beam focusing

Microscale, continuous-profile, diffractive lenses have been fabricated and characterized. Lenses designed to operate at λ₀ = 405 nm were created by focused ion beam milling of a glass substrate. The micro-structured profile was analysed by confocal microscopy and optical performance was quantified by measurements of the transmitted laser beam profile. Lenses of size 125 μm × 125 μm, containing up to 18 annuli and focusing at 400 μm, 450 μm and 500 μm have been made. Measured focused beams were in excellent agreement with the predicted performance. A maximum diffraction efficiency of 84 % and side-lobe suppression down to the 10^-4 level can be achieved. The suitability of the lenses for interfacing with trappedion systems is outlined.

UV superconducting nanowire single-photon detectors with high efficiency, low noise, and 4 K operating temperature

For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon detectors (SNSPDs) have seen success over the past decade for photon-counting applications in the near-infrared, but little work has been done to optimize SNSPDs for wavelengths below 400 nm. Here, we describe the design, fabrication, and characterization of UV SNSPDs operating at wavelengths between 250 and 370 nm. The detectors have active areas up to 56 μm in diameter, 70 - 80% efficiency at temperatures up to 4.2 K, timing resolution down to 60 ps FWHM, blindness to visible and infrared photons, and dark count rates of ∼ 0.25 counts/hr for a 56 μm diameter pixel. These performance metrics make UV SNSPDs ideal for applications in trapped-ion quantum information processing, lidar studies of the upper atmosphere, UV fluorescent-lifetime imaging microscopy, and photon-starved UV astronomy.

Note: Single ion imaging and fluorescence collection with a parabolic mirror trap

Efficient fluorescence collection is the most challenging part in remote entangled ion qubit state generation. To address this issue, we developed an ion trap consisting of a reflective parabolic surface and a needle electrode. This parabolic trap design covers a solid angle of 2π steradians and allows precise ion placement at the focal point of the parabola. We measured (39 ± 3)% fluorescence collection from a single ion with this trap and analyzed the mirror optical performance. We observed single ion image spot size of 3.4 times diffraction limit, improved to 2.8 times diffraction limit with the help of an external deformable mirror. The micromotion of the ion is determined to be the limiting factor, and the result is consistent with theoretical calculation.