High frequency optomechanical disk resonators in III-V ternary semiconductors

Levitating the noise performance of ultra-stable laser cavities assisted by a deep neural network: the non-intuitive role of the mirrors

The most precise measurand available to science is the frequency of ultra-stable lasers. With a relative deviation of 4 × 10^-17 over a wide range of measuring times between one second and 100 seconds, the smallest effects in nature can thus be made measurable. To enable cutting-edge precision, the laser frequency is stabilized to an external optical cavity. This complex optical device must be manufactured to the highest standards and shielded from environmental influences. Given this assumption, the smallest internal sources of perturbation become dominant, namely the internal noise of the optical components. In this work, we present the optimization of all relevant noise sources from all components of the frequency-stabilized laser. We discuss the correlation between each individual noise source and the different parameters of the system and discover the significance of the mirrors. The optimized laser offers a design stability of 8 × 10^-18 for an operation at room temperature for measuring times between one second and 100 seconds.

Electro-Optomechanical Modulation Instability in a Semiconductor Resonator

In semiconductor nano-optomechanical resonators, several forms of light-matter interaction can enrich the canonical radiation pressure coupling of light and mechanical motion and give rise to new dynamical regimes. Here, we observe an electro-optomechanical modulation instability in a gallium arsenide disk resonator. The regime is evidenced by the concomitant formation of regular and dense combs in the radio-frequency and optical spectrums of the resonator associated with a permanent pulsatory dynamics of the mechanical motion and optical intensity. The mutual coupling between light, mechanical oscillations, carriers, and heat, notably through photothermal interactions, stabilizes an extended mechanical comb in the ultrahigh frequency range that can be controlled optically.

Frequency doubling and parametric fluorescence in a four-port aluminum gallium arsenide photonic chip

In this Letter, we report on the fabrication and characterization of a monolithic III-V semiconductor photonic chip, designed to perform nonlinear parametric optical processes for frequency conversion and non-classical state generation. This chip co-integrates an AlGaAs microdisk that is evanescently coupled to two distinct suspended waveguides designed for light injection and collection around 1600 nm and 800 nm, respectively. Quasi-phase matching provided by the resonator geometry and material symmetry, resonant field enhancement, and confinement ensure efficient nonlinear interactions. We demonstrate second-harmonic generation efficiency of 5%W^-1 and a biphoton generation rate of 1.2 kHz/µW through spontaneous down-conversion.

Microwave-to-optical transduction using a mechanical supermode for coupling piezoelectric and optomechanical resonators

The successes of superconducting quantum circuits at local manipulation of quantum information and photonics technology at long-distance transmission of the same have spurred interest in the development of quantum transducers for efficient, low-noise, and bidirectional frequency conversion of photons between the microwave and optical domains. We propose to realize such functionality through the coupling of electrical, piezoelectric, and optomechanical resonators. The coupling of the mechanical subsystems enables formation of a resonant mechanical supermode that provides a mechanically-mediated, efficient single interface to both the microwave and optical domains. The conversion process is analyzed by applying an equivalent circuit model that relates device-level parameters to overall figures of merit for conversion efficiency η and added noise N. These can be further enhanced by proper impedance matching of the transducer to an input microwave transmission line. The performance of potential transducers is assessed through finite-element simulations, with a focus on geometries in GaAs, followed by considerations of the AlN, LiNbO3, and AlN-on-Si platforms. We present strategies for maximizing η and minimizing N, and find that simultaneously achieving η > 50 % and N < 0.5 should be possible with current technology. We find that the use of a mechanical supermode for mediating transduction is a key enabler for high-efficiency operation, particularly when paired with an appropriate microwave impedance matching network. Our comprehensive analysis of the full transduction chain enables us to outline a development path for the realization of high-performance quantum transducers that will constitute a valuable resource for quantum information science.

On the calculation of the quality factor in contemporary photonic resonant structures

The correct numerical calculation of the resonance characteristics and, principally, the quality factor Q of contemporary photonic and plasmonic resonant systems is of utmost importance, since Q defines the bandwidth and affects nonlinear and spontaneous emission processes. Here, we comparatively assess the commonly used methods for calculating Q using spectral simulations with commercially available, general-purpose software. We study the applicability range of these methods through judiciously selected examples covering different material systems and frequency regimes from the far-infrared to the visible. We take care in highlighting the underlying physical and numerical reasons limiting the applicability of each one. Our findings demonstrate that in contemporary systems (plasmonics, 2D materials) Q calculation is not trivial, mainly due to the physical complication of strong material dispersion and light leakage. Our work can act as a reference for the mindful and accurate calculation of the quality factor and can serve as a handbook for its evaluation in guided-wave and free-space photonic and plasmonic resonant systems.

High frequency optomechanical disk resonators in III-V ternary semiconductors: erratum

An erratum is presented to correct for a typo in the appendix of the original article.