Silver-based surface plasmon waveguide for terahertz quantum cascade lasers

A Floquet engineering approach to optimize Schottky junction-based surface plasmonic waveguides

The ability to finely control the surface plasmon polariton (SPP) modes of plasmonic waveguides unveils many potential applications in nanophotonics. This work presents a comprehensive theoretical framework for predicting the propagation characteristics of SPP modes at a Schottky junction exposed to a dressing electromagnetic field. Applying the general linear response theory towards a periodically driven many-body quantum system, we obtain an explicit expression for the dielectric function of the dressed metal. Our study demonstrates that the dressing field can be used to alter and fine-tune the electron damping factor. By doing so, the SPP propagation length could be controlled and enhanced by appropriately selecting the intensity, frequency and polarization type of the external dressing field. Consequently, the developed theory reveals an unexplored mechanism for enhancing the SPP propagation length without altering other SPP characteristics. The proposed improvements are compatible with existing SPP-based waveguiding technologies and could lead to breakthroughs in the design and fabrication of state-of-the-art nanoscale integrated circuits and devices in the near future.

Dual resonance phonon-photon-phonon terahertz quantum-cascade laser: physics of the electron transport and temperature performance optimization

The state of the art terahertz-frequency quantum cascade lasers have opened a plethora of applications over the past two decades by testing several designs up to the very limit of operating temperature, optical power and lasing frequency performance. The temperature degradation mechanisms have long been under the debate for limiting the operation up to 210 K in pulsed operation in the GaAs/AlGaAs material system. In this work, we review the existing designs and exploit two main temperature degradation mechanisms by presenting a design in which they both prove beneficial to the lasing operation by dual pumping and dual extracting lasing levels. We have applied the density matrix transport model to select potential candidate structures by simulating over two million active region designs. We present several designs which offer better performance than the current record structure.

HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equation method

The lack of radiation sources in the frequency range of 7-10 THz is associated with strong absorption of the THz waves on optical phonons within the GaAs Reststrahlen band. To avoid such absorption, we propose to use HgCdTe as an alternative material for THz quantum cascade lasers thanks to a lower phonon energy than in III-V semiconductors. In this work, HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target frequency of 8.3 THz have been theoretically investigated using the balance equation method. The optimized active region designs, which are based on three and two quantum wells, exhibit the peak gain exceeding 100 cm^-1 at 150 K. We have analyzed the temperature dependence of the peak gain and predicted the maximum operating temperatures of 170 K and 225 K for three- and two-well designs, respectively. At temperatures exceeding 120 K, the better temperature performance has been obtained for the two-well design, which is associated with a larger spatial overlap of weakly localized lasing wavefunctions, as well as, a higher population inversion. We believe that the findings of this work can open a pathway towards the development of THz quantum cascade lasers featuring a high level of optical gain due to the low electron effective mass in HgCdTe.

Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si_1-xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 μm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 μm thick active gain region with silver metal of 21 cm^-1 at 300 K reducing to 14.5 cm^-1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si_1-xGe_x with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm^-1 and 23.8 cm^-1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings.