High power generation of THz from 1550-nm photoconductive emitters

Ultrabroadband terahertz time-domain spectroscopy using III-V photoconductive membranes on silicon

Electromagnetic waves in the terahertz (THz) frequency range are widely used in spectroscopy, imaging and sensing. However, commercial, table-top systems covering the entire frequency range from 100 GHz to 10 THz are not available today. Fiber-coupled spectrometers, which employ photoconductive antennas as emitters and receivers, show a bandwidth limited to 6.5 THz and some suffer from spectral artifacts above 4 THz. For these systems, we identify THz absorption in the polar substrate of the photoconductive antenna as the main reason for these limitations. To overcome them, we developed photoconductive membrane (PCM) antennas, which consist of a 1.2 µm-thin InGaAs layer bonded on a Si substrate. These antennas combine efficient THz generation and detection in InGaAs with absorption-free THz transmission through a Si substrate. With these devices, we demonstrate a fiber-coupled THz spectrometer with a total bandwidth of 10 THz and an artifact-free spectrum up to 6 THz. The PCM antennas present a promising path toward fiber-coupled, ultrabroadband THz spectrometers.

High-power terahertz pulse generation from bias-free nanoantennas on graded composition InGaAs structures

We present a bias-free photoconductive emitter that uses an array of nanoantennas on an InGaAs layer with a linearly graded Indium composition. The graded InGaAs structure creates a built-in electric field that extends through the entire photoconductive active region, enabling the efficient drift of the photo-generated electrons to the nanoantennas. The nanoantenna geometry is chosen so that surface plasmon waves are excited in response to a 1550 nm optical pump to maximize photo-generated carrier concentration near the nanoantennas, where the built-in electric field strength is maximized. With the combination of the plasmonic enhancement and built-in electric field, high-power terahertz pulses are generated without using any external bias voltage. We demonstrate the generation of terahertz pulses with 860 µW average power at an average optical pump power of 900 mW, exhibiting the highest radiation power compared to previously demonstrated telecommunication-compatible terahertz pulse emitters.

ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW

Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica "TeraFlash pro" system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 µW at a laser power of 42 mW and a bias of 200 V.

THz Superradiance from a GaAs: ErAs Quantum Dot Array at Room Temperature

We report that an ErAs quantum-dot array in a GaAs matrix under 1550 nm pulsed excitation produces cooperative spontaneous emission—Dicke superradiance—in the terahertz frequency region at room temperature. Two key points pertain to the experimental evidence: (i) the pulsed THz emission power is much greater than the continuous wave (CW) photomixing power; and (ii) the ultrafast time-domain waveform displays ringing cycles. A record of ~117 μW pulsed THz power was obtained, with a 1550 nm-to-THz power conversion efficiency of ~0.2%.

Improving the dynamic range of InGaAs-based THz detectors by localized beryllium doping: up to 70 dB at 3 THz

In this Letter, we report on photoconductive terahertz (THz) detectors for 1550 nm excitation based on a low-temperature-grown InGaAs/InAlAs superlattice with a localized beryllium doping profile. With this approach, we address the inherent lifetime-mobility trade-off that arises, since trapping centers also act as scattering sites for photo-excited electrons. The localized doping of the InAlAs barrier only leads to faster electron trapping for a given mobility. As a result, we obtain THz detectors with more than 6 THz bandwidths and 70 dB dynamic ranges (DNRs) at 3 THz and 55 dB DNR at 4 THz. To the best of our knowledge, this is the highest DNR for photoconductive THz time-domain spectroscopy systems published so far.

Comparative study of equivalent circuit models for photoconductive antennas

Comparison of equivalent circuit models (ECM) for photoconductive antennas (PCA) represents a challenge due to the multiphysics phenomena involved during PCA operation and the absence of a standardized validation methodology. In this work, currently reported ECMs are compared using a unique set of simulation parameters and validation indicators (THz waveform, optical power saturation, and ECM voltages consistency). The ECM simulations are contrasted with measured THz pulses of an H-shaped 20μm gap PCA at different optical powers (20mW to 220mW). In addition, an alternative two-element ECM that accounts for both space-charge and radiation screening effects is presented and validated using the proposed methodology. The model shows an accurately reproduced THz pulse using a reduced number of circuital elements, which represents an advantage for PCA modeling.