Resonant-cavity infrared detector with five-quantum-well absorber and 34% external quantum efficiency at 4 μm

Midwave resonant cavity infrared detectors (RCIDs) with suppressed background noise

We report a resonant cavity infrared detector (RCID) with an InAsSb/InAs superlattice absorber with a thickness of only ≈ 100 nm, a 33-period GaAs/Al0.92Ga0.08As distributed Bragg reflector bottom mirror, and a Ge/SiO2/Ge top mirror. At a low bias voltage of 150 mV, the external quantum efficiency (EQE) reaches 58% at the resonance wavelength λres ≈ 4.6 µm, with linewidth δλ = 19-27 nm. The thermal background current for a realistic system scenario with f/4 optic that views a 300 K scene is estimated by integrating the photocurrent generated by background spanning the entire mid-IR spectral band (3-5 µm). The resulting specific detectivity is a factor of 3 lower than for a state-of-the-art broadband HgCdTe device at 300 K, where dark current dominates the noise. However, at 125 K where the suppression of background noise becomes critical, the estimated specific detectivity D* of 5.5 × 1012 cm Hz½/W is more than 3× higher. This occurs despite a non-optimal absorber cut-off that causes the EQE to decrease rapidly with decreasing temperature, e.g., to 33% at 125 K. The present RCID's advantage over the broadband device depends critically on its low EQE at non-resonance wavelengths: ≤ 1% in the range 3.9-5.5 µm. Simulations using NRL MULTIBANDS indicate that impact ionization in the bottom contact and absorber layers dominates the dark current at near ambient temperatures. We expect future design modifications to substantially enhance D* throughout the investigated temperature range of 100-300 K.

Resonant-cavity-enhanced infrared detector incorporating an ultra-thin type-II superlattice: design and simulation

A resonant-cavity-enhanced type-II superlattice (T2SL) infrared detector based on a metal grating has been designed to address the weak photon capture and low quantum efficiency (QE) issues of T2SL infrared detectors. Simulations have been conducted to analyze the effects of metal grating parameters, including length, thickness, and incident angle, on the spectral response and absorptivity of the absorption layers in T2SL infrared detectors. By optimizing the design, an appropriate resonant cavity structure was obtained. Research results indicate that the resonant cavity structure can significantly enhance the absorption rate of a T2SL infrared detector with a 0.2 µm thick absorption layer in the 3-5 µm wavelength range, observing peak absorption rates at 3.82 µm and 4.73 µm, with values of 97.6% and 98.2%, respectively. The absorption rate of the 0.2 µm thick T2SL absorption layer at peak wavelengths increased from 6.03% and 2.3% to 54.48% and 27.91%, respectively. The implementation of the resonant-cavity-enhanced T2SL infrared detector improves the QE while reducing absorption layer thickness, thus opening up new avenues for improving T2SL detector performance.

Resonant cavity-enhanced photodiode array for miniaturised spectroscopic sensing

Optical spectroscopic sensing is a technique that is commonly employed for the identification and compositional analysis of a wide variety of substances, from biological samples to greenhouse gases. High-resolution spectrometers are well established, however, attempts to miniaturise the designs can suffer from adverse effects due to the miniaturisation, for both Fourier transform based interferometric designs, as well as dispersive designs. In this work, a linear array of resonant cavity-enhanced photodiodes is realised with spatially chirped resonance wavelength, offering chip-scale free-space hyperspectral sensing. Resonant cavity-enhanced photodiodes sense over a narrow spectral band, which can be tuned by the thicknesses of the heterostructure. Through this work, multiple narrow spectral bands can be sensed by resonant cavity-enhanced photodiodes on a single chip by grading the thicknesses across the wafer. Photocurrent measurements from a fabricated array determine the wavelength of incident light with an accuracy of ± 2 nm.

Methane detection using an interband-cascade LED coupled to a hollow-core fiber

Midwave infrared interband-cascade light-emitting devices (ICLEDs) have the potential to improve the selectivity, stability, and sensitivity of low-cost gas sensors. We demonstrate a broadband direct absorption CH₄ sensor with an ICLED coupled to a plastic hollow-core fiber (1 m length, 1500 µm inner diameter). The sensor achieves a 1σ noise equivalent absorption of approximately 0.2 ppmv CH₄ at 1 Hz, while operating at a low drive power of 0.5 mW. A low-cost sub-ppmv CH₄ sensor would make monitoring emissions more affordable and more accessible for many relevant industries, such as the petroleum, agriculture, and waste industries.

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity

Mid-infrared resonant cavity-enhanced photodetectors (RCE PD) present a promising technology for targeted gas detection. We demonstrate an RCE PD incorporating an InAs/InAsSb superlattice as the detecting element, extending the resonant wavelength beyond 4 µm. AlAsSb/GaSb mirrors and a unipolar barrier active region paralleling an nBn structure are also used, and performance is compared to a conventional broadband nBn detector incorporating the same superlattice. The RCE PD exhibited a Q-factor of ∼90 and an extremely stable resonance wavelength. Peak responsivity was 3.0 A W^-1 at 240 K, equalling 84% quantum efficiency, a 5.5 times increase over the reference nBn at the same wavelength. Dark current density was 3.3×10^-2 A cm^-2 at 240 K, falling to 2.7×10^-4 A cm^-2 at 180 K. The broadband BLIP limit is approached at 180 K with specific detectivity of 2.1×10¹¹ cm Hz^1/2 W^-1, which presents the potential of achieving BLIP-limited operation in the thermoelectric cooling regime.