Efficient quasi-phase-matching in fan-out PPSLT crystal waveguides by femtosecond laser direct writing

Broadband nonlinear optical response and sub-picosecond carrier dynamics in graphene-SnSe2 van der Waals heterostructures

The van der Waals (vdWs) heterostructures, with vertical layer stacking structure of various two-dimensional (2D) materials, maintain the reliable photonic characteristics while compensating the shortcomings of the participating individual components. In this work, we combine the less-studied multilayer tin selenide (SnSe2) thin film with one of the traditional 2D materials, graphene, to fabricate the graphene-based vdWs optical switching element (Gr-SnSe2) with superior broadband nonlinear optical response. The transient absorption spectroscopy (TAS) measurement results verify that graphene acts as the recombination channel for the photogenerated carrier in the Gr-SnSe2 sample, and the fast recovery time can be reduced to hundreds of femtoseconds which is beneficial for the optical modulation process. The optical switching properties are characterized by the I-scan measurements, exhibiting a saturable energy intensity of 2.82 mJ·cm-2 (0.425 µJ·cm-2) and a modulation depth of 15.6% (22.5%) at the wavelength of 1030 nm (1980nm). Through integrating Gr-SnSe2 with a cladding waveguide, high-performance picosecond Q-switched operation in the near-infrared (NIR) and mid-infrared (MIR) spectral regions are both achieved. This work experimentally demonstrates the great potential of graphene-based vdWs heterostructures for applications in broadband ultrafast photonics.

Femtosecond-laser-assisted high-aspect-ratio nanolithography in lithium niobate

We report the successful fabrication of high-aspect-ratio lithium niobate (LN) nanostructures by using femtosecond-laser-assisted chemical etching. In this technique, a 1 kHz femtosecond laser is first used to induce local modifications inside the LN crystal. Then, selective chemical wet etching is conducted using a buffered oxide etch (BOE) solution. The etching rate in the laser-modified area reaches 2 μm h-1, which is enhanced by a factor of ∼660 in comparison to previous reports without laser irradiation. Such high selectivity in chemical etching helps realize high-performance maskless nanolithography in lithium niobate. In the experiment, we have fabricated high-quality LN nanohole arrays. The nanohole size reaches ∼100 nm and its aspect ratio is above 40 : 1. The minimal period of the LN hole array is 300 nm. Our work paves a way to fabricate LN nano-integrated devices for advanced optic and electronic applications.

UV generation via periodically poled MgO:LiTaO3 circular waveguide crystal and diode-based master oscillator power amplifier

Lasers with emission wavelengths in the near-ultraviolet (UV) spectral range have been used in many applications across various fields, and the demand for these lasers has been on the rise. For example, in medicine, near-UV light has been used for fluorophore excitation. Although laser diodes emitting in this region exist, single longitudinal mode lasers emitting at 380 nm with high optical power are limited. One of the solutions to this problem is the use of second harmonic generation by a non-linear crystal. In this work, single-longitudinal-mode laser emission at 380.5 nm with an optical power of up to 13 mW has been achieved. The emission was realized by frequency doubling using a periodically poled circular waveguide crystal of stoichiometric L i T a O 3 doped with MgO (PPMgSLT) pumped by a master oscillator power amplifier with optical power up to 5 W. A distributed Bragg reflector ridge waveguide laser diode at 761 nm was used as the master oscillator and a tapered amplifier as the power amplifier.

2D layered MSe2 (M = Hf, Ti and Zr) for compact lasers: nonlinear optical properties and GHz lasing

Two-dimensional (2D) ternary transition-metal dichalcogenides (TMDCs) are of great research interest because their superior layer-dependent optical modulation properties. In this work, three different kinds of TMDC nanosheets, including hafnium diselenide (HfSe2), titanium diselenide (TiSe2) and zirconium diselenide (ZrSe2), are prepared by liquid phase exfoliation (LPE) technique. The high-quality material properties of these TMDC nanosheets are confirmed by Raman spectroscopy and X-ray diffraction analysis. Furthermore, the bandgap information of five-layer MSe2 has been investigated via utilizing density functional theory. The calculation results exhibit ultra-narrow bandgap structure (lower than 1.1 eV) for all these three materials, indicating that MSe2 is suitable for broadband photonic applications. By applying the fabricated MSe2 as saturable absorbers, high-performance Q-switched mode-locked laser operation has been realized. The laser gain media are Nd:GdVO4 cladding waveguides fabricated by femtosecond laser direct writing. As a result, the pulsed waveguide lasers are able to deliver approximately 6-GHz laser pulses with a signal-to-noise ratio of over 45 dB. The minimum pulse width is determined to be as short as 26 ps. The results demonstrated in this work exhibit the great potential of TMDCs and waveguide structures in applications of pulsed lasers with compact footprints.

Quantum frequency conversion from ultraviolet to visible band through waveguides in a period-poled MgO:LiTaO3 crystal

In research on hybrid quantum networks, visible or near-infrared frequency conversion has been realized. However, technical limitations mean that there have been few studies involving the ultraviolet band, and unfortunately the wavelengths of the rare-earth or alkaline-earth metal atoms or ions that are used widely in research on quantum information are often in the UV band. Therefore, frequency conversion of the ultraviolet band is very important. In this paper, we demonstrate a quantum frequency conversion between ultraviolet and visible wavelengths by fabricating waveguides in a period-poled MgO:LiTaO₃ crystal with a laser writing system, which will be used to connect the wavelength of the dipole transition of ¹⁷¹Yb⁺ at 369.5 nm and the absorption wavelength of Eu³⁺ at 580 nm in a solid-state quantum memory system. An external conversion efficiency of 0.85% and a signal-to-noise ratio of greater than 500 are realized with a pumping power of 3.28 W at 1018 nm. Furthermore, we complete frequency conversion of the classical polarization state by means of a symmetric optical setup based on the fabricated waveguide, and the process fidelity of the conversion is (96.13 ± 0.021)%. This converter paves the way for constructing a hybrid quantum network and realizing a quantum router in the ultraviolet band in the future.