Plasmon-enabled spectrally narrow ultraviolet luminescence device using Pt nanoparticles covered one microwire-based heterojunction

Narrowband Solar-Blind Photodetection of the Plasmonic (In0.3Ga0.7)2O3 Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification

Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (In0.3Ga0.7)2O3 thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (In0.3Ga0.7)2O3 thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity (R), external quantum efficiency, and detectivity (D*) are 193 mA/W, approximately 100%, and 1014 Jones, respectively, at a bias of -6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.

Exciton-polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures

One-dimensional (1D) wirelike superlattice micro/nanostructures have received considerable attention for potential applications due to their versatility and capability for modulating optical and electrical characteristics. In this study, 1D superlattice microwires (MWs), which are made of undoped ZnO and Ga-doped ZnO with periodic and alternating crystalline layers (ZnO/ZnO:Ga), were synthesized individually. Under optical excitation, a series of resonance peaks in the photoluminescence spectrum can be ascribed to polariton emission, which originates from the coupling interaction of the 1D photonic crystal and confined excitons along the wire direction. Using a p-type GaN layer as the hole transport layer, a kind of waveguide light source based on an individual ZnO/ZnO:Ga superlattice MW was proposed and constructed. By analysing the spatially resolved electroluminescence spectra, the observed multipeak was ascribed to exciton-polariton emission with a vacuum Rabi splitting of about 275 meV. Cladding with Rh nanostructures gives rise to appropriate ultraviolet plasmons, and the Rabi splitting energy of our device was enhanced up to 413 meV. The exciton-polariton properties were further examined using angle-resolved electroluminescence measurements. Therefore, individual superlattice MWs can act as optical microresonators to achieve photon-exciton coupling with a large Rabi splitting energy. The experimental results indicate that an individual ZnO/ZnO:Ga superlattice MW can be generally used in developing exciton-polariton luminescence/lasing light sources, particularly for constructing low-threshold/thresholdless lasers toward pragmatic applications.

Electrically driven whispering-gallery-mode microlasers in an n-MgO@ZnO:Ga microwire/p-GaN heterojunction

In emerging miniaturized applications, semiconductor micro/nanostructures laser devices have drawn great public attentions of late years. The device performances of micro/nanostructured microlasers are highly restricted to the different reflective conditions at various side surfaces of microresonators and junction interface quality. In this study, an electrically driven whispering-gallery-mode (WGM) microlaser composed of a Ga-doped ZnO microwire covered by a MgO layer (MgO@ZnO:Ga MW) and a p-type GaN substrate is illustrated experimentally. Incorporating a MgO layer on the side surfaces of ZnO:Ga MWs can be used to reduce light leakage along the sharp edges and the ZnO:Ga/GaN interface. This buffer layer incorporation also enables engineering the energy band alignment of n-ZnO:Ga/p-GaN heterojunction and manipulating the current transport properties. The as-constructed n-MgO@ZnO:Ga MW/p-GaN heterojunction device can emit at an ultraviolet wavelength of 375.5 nm and a linewidth of about 25.5 nm, achieving the excitonic-related recombination in the ZnO:Ga MW. The broadband spectrum collapsed into a series of sharp peaks upon continuous-wave (CW) operation of electrical pumping, especially for operating current above 15.2 mA. The dominant emission line was centered at 378.5 nm, and the line width narrowed to approximately 0.95 nm. These sharp peaks emerged from the spontaneous emission spectrum and had an average spacing of approximately 5.5 nm, following the WGM cavity modes. The results highlight the significance of interfacial engineering for optimizing the performance of low-dimensional heterostructured devices and shed light on developing future miniaturized microlasers.

Self-powered ultraviolet photodetector based on an n-ZnO:Ga microwire/p-Si heterojunction with the performance enhanced by a pyro-phototronic effect

In the present study, a heterojunction made of an individual ZnO microwire via Ga incorporation (ZnO:Ga MW) with a p-Si substrate was constructed to develop a self-powered ultraviolet photodetector. When operated under an illumination of 370 nm light with a power density of ∼ 0.5 mW/cm², the device exhibited an excellent responsivity of 0.185 A/W, a large detectivity of 1.75×10¹² Jones, and excellent stability and repeatability. The device also exhibited a high on/off photocurrent ratio up to 10³, and a short rising and falling time of 499/412 μs. By integrating the pyro-phototronic effect, the maximum responsivity and detectivity increased significantly to 0.25 A/W and 2.30×10¹² Jones, respectively. The response/recovery time was drastically reduced to 79/132 μs without an external power source. In addition, the effects of light wavelength, power density, and bias voltage on the photocurrent response mediated by the pyro-phototronic effect were systematically characterized and discussed. Our work not only provides an easy yet efficient procedure for constructing a self-powered ultraviolet photodetector but also broadens the application prospects for developing individual wire optoelectronic devices based on the photovoltaic-pyro-phototronic effect.