Broadband sum frequency generation spectroscopy of dark exciton states in hBN-encapsulated monolayer WSe2

Nanoscale thickness Octave-spanning coherent supercontinuum light generation

Coherent broadband light generation has attracted massive attention due to its numerous applications ranging from metrology, sensing, and imaging to communication. In general, spectral broadening is realized via third-order and higher-order nonlinear optical processes (e.g., self-phase modulation, Raman transition, four-wave mixing, multiwave mixing), which are typically weak and thus require a long interaction length and the phase matching condition to enhance the efficient nonlinear light-matter interaction for broad-spectrum generation. Here, for the first time, we report octave-spanning coherent light generation at the nanometer scale enabled by a phase-matching-free frequency down-conversion process. Up to octave-spanning coherent light generation with a -40dB spectral width covering from ~565 to 1906 nm is demonstrated in discreate manner via difference-frequency generation, a second-order nonlinear process in gallium selenide and niobium oxide diiodide crystals at the 100-nanometer scale. Compared with conventional coherent broadband light sources based on bulk materials, our demonstration is ~5 orders of magnitude thinner and requires ~3 orders of magnitude lower excitation power. Our results open a new way to possibly create compact, versatile and integrated ultra-broadband light sources.

3D hydrogen-like screening effect on excitons in hBN-encapsulated monolayer transition metal dichalcogenides

We observe both s-series and p-series excitons by using sum frequency generation spectroscopy on monolayer (1L-)MX2 (M = Mo, W, X = S, Se) encapsulated by hexagonal boron nitride (hBN). Moreover, we perform numerical calculations with the Rytova-Keldysh potential and obtain the relative dielectric constant of hBN among other parameters. The obtained relative dielectric constant can be approximated by the high-frequency limit of the infrared dispersion even though the exciton binding energies are almost on the phonon resonances in hBN. This suggests that the theoretically indicated modification of the exciton level structure due to the phonon resonances is negligible. The power-law scaling of exciton binding energies indicates that dielectric screening of 1L-MX2 exciton levels other than 1s can be approximated by that of a 3D hydrogen model with the dielectric constant of hBN.

Diabatic and adiabatic transitions between Floquet states imprinted in coherent exciton emission in monolayer WSe2

Floquet engineering is a promising way of controlling quantum system with photon-dressed states on an ultrafast time scale. So far, the energy structure of Floquet states in solids has been intensively investigated. However, the dynamical aspects of the photon-dressed states under ultrashort pulse have not been explored yet. Their dynamics become highly sensitive to the driving field transients, and thus, understanding them is crucial for ultrafast manipulation of a quantum state. Here, we observed the coherent exciton emission in monolayer WSe₂ at room temperature at the appropriate photon energy and the field strength of the driving light pulse using high-harmonic spectroscopy. Together with numerical calculations, our measurements revealed that the coherent exciton emission spectrum reflects the diabatic and adiabatic dynamics of Floquet states of excitons. Our results provide a previosuly unexplored approach to Floquet engineering and lead to control of quantum materials through pulse shaping of the driving field.