Surface phonon resonance enhanced Goos-Hänchen shift and its sensing application in the mid-infrared region

High sensitivity gas sensor based on surface exciton polariton enhanced photonic spin Hall effect

In this paper, the sub-wavelength transverse displacement of photonic spin Hall effect (PSHE) is significantly enhanced by the surface exciton polariton (SEP) for application in gas sensing. The transverse displacement of 14.4 times the wavelength of incident light is achieved with the SEP enhanced PSHE, which is about 3 times that of surface plasmon resonance enhanced PSHE. A gas sensor based on SEP enhanced PSHE is proposed for the detection of SO2, and the refractive index sensitivity of 6320.4 µm/RIU is obtained in the refractive index range from 1.00027281 to 1.00095981. These results undoubtedly demonstrate SEP to be a promising mechanism for PSHE enhancement, and open up new opportunities for highly sensitive gas sensing, biosensing, and chemical sensing.

Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures

Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) method. The results illustrate that Tamm phonon-polaritons can be excited, and the magnetic field is partially centralized at the junction of Ge cavity and SiC film, aimed to improve the interactions of photon-phonon. The absorptivity/emissivity of the structure can be better optimized by controlling the coupling of surface modes with the incident wave. Near-unity absorption can be achieved through optimizing the SiC grating/Ge cavity/distributed Bragg reflector (DBR) multilayer structure with geometrical parameters of d_s = 0.75 μm, d_g = 0.7 μm, d₁ = 1.25 μm and d₂ = 0.75 μm, respectively. Physical mechanism of selective emission characteristics is deliberated. In addition, the simulation results demonstrate that the emitter desensitizes to the incidence angle and polarization state in the mid-infrared (MIR) range. This research ameliorates the function of the selective emitters, which provides more efficient design for SiC-based systems.