Extreme events in two laterally-coupled semiconductor lasers

Enhanced extreme events in three cascade-coupled semiconductor lasers

Extreme events (EEs) are rare and unpredictable, as have been observed in nature. Up to now, manipulating EEs has remained a challenge. Here, we experimentally observe the enhancement of EEs in a three cascade-coupled semiconductor laser system. Specifically, a continuous-wave optical injection semiconductor laser acts as the chaotic source with rare EEs, which is subsequently injected into a second laser for increasing the number of EEs. Interestingly, we find that the number and region size of EEs can be further enhanced by sequentially injecting into a third laser, i.e., a cascade-injection structure. Our experimental observations are in good agreement with the numerical results, which indicate that EEs can be significantly enhanced in wide injection parameter space due to the cascade-injection effect. Furthermore, our simulations show that the evoluation of the regions with enhanced EEs may be associated with the noise considered.

Different routes to large-intensity pulses in Zeeman laser model

In this study, we report a rich variety of large-intensity pulses exhibited by a Zeeman laser model. The instabilities in the system occur via three different dynamical processes, such as quasiperiodic intermittency, Pomeau-Manneville intermittency, and the breakdown of quasiperiodic motion to chaos followed by an interior crisis. This Zeeman laser model is more capable of exploring the major possible types of instabilities when changing a specific system's parameter in a particular range. We exemplified distinct dynamical transitions of the Zeeman laser model. The statistical measures reveal the appearance of the low probability of large-intensity pulses above the qualifier threshold value. Moreover, they seem to follow an exponential decay that shows a Poisson-like distribution. The impact of noise and time delay effects have been analyzed near the transition point of the system.

Rogue wave generation using a chaotic semiconductor laser with energy redistribution

We demonstrate for the first time that optical rogue waves (RWs) can be generated using a chaotic semiconductor laser with energy redistribution. Chaotic dynamics are numerically generated using the rate equation model of an optically injected laser. The chaotic emission is then sent to an energy redistribution module (ERM) that consists of a temporal phase modulation and a dispersive propagation. The process enables a temporal energy redistribution of the chaotic emission waveforms, where coherent summation of consecutive laser pulses leads to random generation of giant intensity pulses. Efficient generation of optical RWs are numerically demonstrated by varying the ERM operating parameters in the entire injection parameter space. The effects of the laser spontaneous emission noise on the generation of RWs are further investigated. The RW generation approach offers a relatively high flexibility and tolerance in the choice of ERM parameters according to the simulation results.

Controlling the likelihood of extreme events in an optically pumped spin-VCSEL via chaotic optical injection

We report on the manipulation of extreme events (EEs) in a slave spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL) subject to chaotic optical injection from a master spin-VCSEL. The master laser is free-running but yielding a chaotic regime with obvious EEs, while the slave laser originally (i.e., without external injection) operates in either continuous-wave (CW), period-one (P1), period-two (P2), or a chaotic state. We systematically investigate the influence of injection parameters, i.e., injection strength and frequency detuning, on the characteristics of EEs. We find that injection parameters can regularly trigger, enhance, or suppress the relative number of EEs in the slave spin-VCSEL, where the large ranges of enhanced vectorial EEs and average intensity of both vectorial and scalar EEs can be achieved with suitable parameter conditions. Moreover, with the help of two-dimensional correlation maps, we confirm that the probability of occurrence of EEs in the slave spin-VCSEL is associated with the injection locking regions, outside which enhanced relative number of EEs regions can be obtained and expanded with augmenting the complexity of the initial dynamic state of the slave spin-VCSEL.