Eye-safe 2 μm luminescence from thulium-doped silicon

Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 µm waveband

Significantly increased interests have been witnessed for the 2 µm waveband which is considered to be a promising alternative window for fiber and free-space optical communications. However, the less mature device technology at this wavelength range is one of the primary obstacles toward practical applications. In this work, we demonstrate an efficient and high-speed silicon modulator based on carrier depletion in a coupling tunable resonator. A benchmark high modulation efficiency of 0.75 V·cm is achieved. The 3-dB electro-optic bandwidth is measured to be 26 GHz allowing for up to 34 Gbit/s on-off keying modulation with a low energy consumption of ∼0.24 pJ/bit. It provides a solution for the silicon modulator with high-speed and low power consumption in the 2-µm waveband.

On-chip germanium photodetector with interleaved junctions for the 2-µm wave band

Recently, the 2-µm wave band has gained increased interest due to its potential application for the next-generation optical communication. As a proven integration platform, silicon photonics also benefit from the lower nonlinear absorption and larger electro-optic coefficient. However, this spectral range is far beyond the photodetection range of germanium, which places an ultimate limit for on-chip applications. In this work, we demonstrate a waveguide-coupled photodetector enabled by a tensile strain-induced absorption in germanium. Responsivity is greatly enhanced by the proposed interleaved junction structure. The device is designed on a 220-nm silicon-on-insulator and is fabricated via a standard silicon photonic foundry process. By utilizing different interleaved PN junction spacing configurations, we were able to measure a responsivity of 0.107 A/W at 1950 nm with a low bias voltage of -6.4 V for the 500-μm-long device. Additionally, the 3-dB bandwidth of the device was measured to be up to 7.1 GHz. Furthermore, we successfully achieved data transmission at a rate of 20 Gb/s using non-return-to-zero on-off keying modulation.

Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

We report the lattice site and symmetry of optically active Dy³⁺ and Tm³⁺ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.

High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions

We report on photoluminescence in the 1.3 and 1.7 μm spectral ranges in silicon doped with dysprosium. This is attributed to the Dy3+ internal transitions between the second Dy3+ excited state and the ground state, and between the third Dy3+ excited state and the ground state. Luminescence is achieved by Dy implantation into Si substrates codoped with boron, to form dislocation loops, and show a strong dependence on fabrication process. The spectra consist of several sharp lines with the strongest emission at 1736 nm, observed up to 200 K. No Dy3+ luminescence is observed in samples without B codoping, showing the paramount importance of dislocation loops to enable the Dy emission.