Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation

Antireflection microstructures on ZnSe for mid- and far-IR fabricated by femtosecond laser ablation assisted with wet chemical etching

Most infrared materials used in high-power systems, such as optical parametric generators, have high values of refractive indices, which result in high Fresnel losses. The performance of conventional antireflection coatings is limited when used in high-power and ultra-broadband systems. An alternative approach is to fabricate antireflection microstructures (ARMs) that allow for a broadband increase in transmittance without reducing the damage threshold of the material. In this work, ARMs were fabricated on the surface of ZnSe crystals using the femtosecond laser ablation assisted with wet chemical etching method. This allowed to produce high aspect ratio microstructures that increase the transmittance up to 98% in the mid- and far- infrared regions.

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm

Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 μm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure. The measured values of LIDT of 56 ± 6 MW/cm2 and 51 ± 9 MW/cm2 for two GaSe substrates, respectively, were comparable with the known data of single pulse LIDT of GaSe. The average LIDT intensities of 54 ± 6 MW/cm2 and 52 ± 7 MW/cm2 for the ARMs at two GaSe plates, respectively, were close to LIDT intensities for the corresponding GaSe substrates. The ARMs with lower structural quality had lower LIDT (50-52 MW/cm2) in comparison with the high-quality ARMs (58-60 MW/cm2). High LIDT for high-quality ARMs can be caused by increased selenium content in the ARMs. In any case, all the tested ARMs on the GaSe plates with different surface quality are workable for development of widely tunable mid-infrared nonlinear optical converters.

Bioinspired Near-Full Transmittance MgF2 Window for Infrared Detection in Extremely Complex Environments

Due to the extreme complexity of the anti-reflective subwavelength structure (ASS) parameters and the drastic limitation of Gaussian beam manufacturing accuracy, it remains a great challenge to manufacture ASS with ultrahigh transmittance on the surface of infrared window materials (such as magnesium fluoride (MgF₂)) directly by femtosecond laser. Here, a design, manufacturing, and characterization method that can produce an ultrahigh-performance infrared window by femtosecond laser Bessel beam is proposed. Inspired by the excellent anti-reflective and hydrophobic properties of the special structure of dragonfly wings, a similar structural pattern with grid-distributed truncated cones is designed and optimized for its corresponding parameters to achieve near-full transmittance. The desired submicron structures are successfully fabricated by a Bessel beam after effectively shaping the beam. As a practical application, the bioinspired ASS is manufactured on the surface of MgF₂, achieving an ultrahigh transmittance of 99.896% in the broadband of 3-5 μm, ultrawide angle of incidence (over 70% at 75° incidence), and good hydrophobicity with a water contact angle of 99.805°. Results from infrared thermal imaging experiments show that the ultrahigh-transmittance MgF₂ window has superior image acquisition and anti-interference performance (3.9-8.6% image contrast enhancement and more accurate image edge recognition) in an environment with multiple interfering factors, which may play a significant role in facilitating applications of infrared thermal imaging technologies in extremely complex environments.

Antireflection microstructures fabricated on the surface of a LiGaSe2 nonlinear crystal

LiGaSe₂ is a propitious material for nonlinear parametric conversion in the mid-infrared (mid-IR) range. Its refractive index of n = 2.25 in the 2-12 µm wavelength range results in significant losses due to Fresnel reflection. However, the conventional method of increasing the transmittance with antireflection coatings (ARCs) significantly reduces the damage threshold of the material. Fabrication of the antireflection microstructures (ARMs) is an alternative approach for increasing the surface transmittance. In this work, ARMs were fabricated on the surface of a LiGaSe₂ crystal using a single-pulse femtosecond laser ablation method. An average transmittance of 97.2% in the 2-8 µm spectral range and the maximum transmittance of 98.6% at 4.1 µm were achieved.

Subwavelength Quasi-Periodic Array for Infrared Antireflection

Infrared antireflection of a zinc sulfide (ZnS) surface is important to improve performance of infrared detector systems. In this paper, double-pulse femtosecond laser micro-machining is proposed to fabricate a subwavelength quasi-periodic array (SQA) on ZnS substrate for infrared antireflection. The SQA consisting of approximately 30 million holes within a 2 × 2 cm² area is uniformly formed in a short time. The double-pulse beam can effectively suppress the surface plasma shielding effect, resulting in obtaining a larger array depth. Further, the SQA depth is tunable by changing pulse energy and pulse delay, and can be used to readily regulate the infrared transmittance spectra as well as hydrophobicity. Additionally, the optical field intensity distributions of the SQA simulated by the rigorous coupled-wave analysis method indicate the modulation effect by the array depth. Finally, the infrared imaging quality captured through an infrared window embedded SQA is evaluated by a self-built infrared detection system.

Ultrabroadband suppression of mid-infrared reflection losses of a layered semiconductor by nanopatterning with a focused ion beam

Moth-eye structures are patterned onto gallium selenide surfaces with sub-micrometer precision. In this way, Fresnel reflection losses are suppressed to below one percent within an ultrabroad optical bandwidth from 15 to 65 THz. We tune the geometry by rigorous coupled-wave analysis. Subsequently, ablation with a Ga⁺ ion beam serves to write optimized structures in areas covering 30 by 30 μm. The benefits are demonstrated via optical rectification of femtosecond laser pulses under tight focusing, resulting in emission of phase-stable transients in the mid-infrared. We analyze the performance of antireflection coating directly in the time domain by ultrabroadband electro-optic sampling.