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Fan Z, Cui D, Zhang Z, Zhao Z, Chen H, Fan Y, Li P, Zhang Z, Xue C, Yan S. Recent Progress of Black Silicon: From Fabrications to Applications. NANOMATERIALS 2020; 11:nano11010041. [PMID: 33375303 PMCID: PMC7823726 DOI: 10.3390/nano11010041] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2020] [Revised: 12/23/2020] [Accepted: 12/23/2020] [Indexed: 01/08/2023]
Abstract
Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.
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Affiliation(s)
- Zheng Fan
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Danfeng Cui
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zengxing Zhang
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zhou Zhao
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Hongmei Chen
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Yanyun Fan
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Penglu Li
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zhidong Zhang
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Chenyang Xue
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
- Correspondence: (C.X.); (S.Y.)
| | - Shubin Yan
- The School of Electrical Engineering, Zhejiang University of Water Resources and Electric Power, Hangzhou 310018, China
- Zhejiang-Belarus Joint Laboratory of Intelligent Equipment and System for Water Conservancy and Hydropower Safety Monitoring, Zhejiang University of Water Resources and Electric Power, Hangzhou 310018, China
- Correspondence: (C.X.); (S.Y.)
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Localized states and quantum effect of photo-generated carriers in photovoltaic system. Sci Rep 2017; 7:7221. [PMID: 28775274 PMCID: PMC5543067 DOI: 10.1038/s41598-017-07663-1] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2017] [Accepted: 07/05/2017] [Indexed: 11/11/2022] Open
Abstract
We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system. It should be noted that the amplitude change of the quantum vibration occurs under magnetic field with 0.33T on the sample prepared in oxygen, owing to the electron spin in the localized states. The photoluminescence (PL) spectra measured from 300 nm to 1700 nm exhibit the localized states in various regions in the photovoltaic system, in which the electrons can stand in the localized states with longer lifetime to be uneasy into Auger recombination.
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