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Wong WW, Wang N, Esser BD, Church SA, Li L, Lockrey M, Aharonovich I, Parkinson P, Etheridge J, Jagadish C, Tan HH. Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers. ACS NANO 2023; 17:15065-15076. [PMID: 37449797 DOI: 10.1021/acsnano.3c04234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Bryan D Esser
- Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
| | - Stephen A Church
- Photon Science Institute and Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, United Kingdom
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Mark Lockrey
- Microstructural Analysis Unit, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Patrick Parkinson
- Photon Science Institute and Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, United Kingdom
| | - Joanne Etheridge
- Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
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Zubov F, Maximov M, Moiseev E, Vorobyev A, Mozharov A, Berdnikov Y, Kaluzhnyy N, Mintairov S, Kulagina M, Kryzhanovskaya N, Zhukov A. Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board. OPTICS LETTERS 2021; 46:3853-3856. [PMID: 34388758 DOI: 10.1364/ol.432920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Accepted: 07/05/2021] [Indexed: 06/13/2023]
Abstract
We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former's bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4-3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.
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Wong WW, Su Z, Wang N, Jagadish C, Tan HH. Epitaxially Grown InP Micro-Ring Lasers. NANO LETTERS 2021; 21:5681-5688. [PMID: 34143635 DOI: 10.1021/acs.nanolett.1c01411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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Zhukov AE, Kryzhanovskaya NV, Moiseev EI, Maximov MV. Quantum-dot microlasers based on whispering gallery mode resonators. LIGHT, SCIENCE & APPLICATIONS 2021; 10:80. [PMID: 33859169 PMCID: PMC8050098 DOI: 10.1038/s41377-021-00525-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Revised: 03/24/2021] [Accepted: 03/30/2021] [Indexed: 05/06/2023]
Abstract
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus, using conventional epitaxial structures and relatively simple post-growth processing methods, it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using III-V heterostructures grown on silicon.
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Affiliation(s)
- A E Zhukov
- Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg, 194100, Russia.
| | - N V Kryzhanovskaya
- Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg, 194100, Russia
| | - E I Moiseev
- Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg, 194100, Russia
| | - M V Maximov
- Nanophotonics laboratory, Alferov University, Khlopina 8/3, St. Petersburg, 194021, Russia
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Yang ZQ, Shao ZK, Chen HZ, Mao XR, Ma RM. Spin-Momentum-Locked Edge Mode for Topological Vortex Lasing. PHYSICAL REVIEW LETTERS 2020; 125:013903. [PMID: 32678624 DOI: 10.1103/physrevlett.125.013903] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Accepted: 06/03/2020] [Indexed: 06/11/2023]
Abstract
Spin-momentum locking is a direct consequence of bulk topological order and provides a basic concept to control a carrier's spin and charge flow for new exotic phenomena in condensed matter physics. However, up to date the research on spin-momentum locking solely focuses on its in-plane transport properties. Here, we report an emerging out-of-plane radiation feature of spin-momentum locking in a non-Hermitian topological photonic system and demonstrate a high performance topological vortex laser based on it. We find that the gain saturation effect lifts the degeneracy of the paired counterpropagating spin-momentum-locked edge modes enabling lasing from a single topological edge mode. The near-field spin and orbital angular momentum of the topological edge mode lasing has a one-to-one far-field radiation correspondence. The methodology of probing the near-field topology feature by far-field lasing emission can be used to study other exotic phenomena. The device can lead to applications in superresolution imaging, optical tweezers, free-space optical sensing, and communication.
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Affiliation(s)
- Zhen-Qian Yang
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Zeng-Kai Shao
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Hua-Zhou Chen
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Xin-Rui Mao
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Ren-Min Ma
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
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Xue Y, Luo W, Zhu S, Lin L, Shi B, Lau KM. 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon. OPTICS EXPRESS 2020; 28:18172-18179. [PMID: 32680018 DOI: 10.1364/oe.392120] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Realization of fully integrated silicon photonics has been handicapped by the lack of a reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous wave (CW) lasing and operation sustainable at high temperatures are critical for practical applications. Here, we present the first electrically pumped room temperature (RT) CW lasing results of 1.55 μm quantum dash (QDash) lasers directly grown on patterned on-axis (001) Si using metal organic chemical vapor deposition (MOCVD). Adopting a dash-in-well structure as the active medium, the growth of QDash was optimized on an InP on Si template. Incorporating the advantages of the optimized material growth and device fabrication, good laser performance including a low threshold current of 50 mA, a threshold current density of 1.3 kA/cm2 and operation at elevated temperature up to 59 °C in CW mode was achieved. Comparison of lasers grown on Si and native InP substrates in the same growth run was made. Based on the laser characteristics measured at room temperature and elevated temperatures, the QDash quality on the two substrates is comparable. These results suggest that MOCVD is a viable technique for lasers on Si growth and represent an advance towards silicon-based photonic-electronic integration and manufacturing.
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InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods. MATERIALS 2020; 13:ma13102315. [PMID: 32443456 PMCID: PMC7287998 DOI: 10.3390/ma13102315] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Revised: 05/14/2020] [Accepted: 05/15/2020] [Indexed: 12/12/2022]
Abstract
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.
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Abstract
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays of carrier localizing indium-rich regions inside In-depleted residual quantum wells. QWDs are intermediate in properties between 2D quantum wells and 0D quantum dots and show some advantages of both of those. In particular, they offer high optical gain/absorption coefficients as well as reduced carrier diffusion in the plane of the active region. Edge-emitting QWD lasers demonstrate low internal loss of 0.7 cm−1 and high internal quantum efficiency of 87%. as well as a reasonably high level of continuous wave (CW) power at room temperature. Due to the high optical gain and suppressed non-radiative recombination at processed sidewalls, QWDs are especially advantageous for microlasers. Thirty-one μm in diameter microdisk lasers show a high record for this type of devices output power of 18 mW. The CW lasing is observed up to 110 °C. A maximum 3-dB modulation bandwidth of 6.7 GHz is measured in the 23 μm in diameter microdisks operating uncooled without a heatsink. The open eye diagram is observed up to 12.5 Gbit/s, and error-free 10 Gbit/s data transmission at 30 °C without using an external optical amplifier, and temperature stabilization is demonstrated.
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Zubov F, Maximov M, Kryzhanovskaya N, Moiseev E, Muretova M, Mozharov A, Kaluzhnyy N, Mintairov S, Kulagina M, Ledentsov N, Chorchos L, Ledentsov N, Zhukov A. High speed data transmission using directly modulated microdisk lasers based on InGaAs/GaAs quantum well-dots. OPTICS LETTERS 2019; 44:5442-5445. [PMID: 31730078 DOI: 10.1364/ol.44.005442] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm in diameter microdisk laser were conducted at room and elevated temperatures during more than 1200 hr. The average rate of the output power degradation was about 25 and 29 nW/hr at 40°C and 60°C, respectively.
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