Anapole enhanced on-chip routing of spin-valley photons in 2D materials for silicon integrated optical communication

Self-Powered Circularly Polarized Light Detection Enabled by Chiral Two-Dimensional Perovskites with Mixed Chiral-Achiral Organic Cations

Direct detection of circularly polarized light (CPL) holds great promise for the development of various optical technologies. Chiral 2D organic-inorganic halide perovskites make it possible to fabricate CPL-sensitive photodetectors. However, selectively detecting left-handed circularly polarized (LCP) and right-handed circularly polarized (RCP) light remains a significant challenge. Herein, we demonstrate a greatly enhanced distinguishability of photodiode-type CPL photodetectors based on chiral 2D perovskites with mixed chiral aryl (R)-(+),(S)-(-)-α-methylbenzylammonium (R,S-MBA) and achiral alkyl n-butylammonium (nBA) cations. The (R,S-MBA0.5nBA0.5)2PbI4 perovskites exhibit a 10-fold increase in circular dichroism signals compared to (R,S-MBA)2PbI4 perovskites. The CPL photodetectors based on the mixed-cation perovskites exhibit self-powered capabilities with a specific detectivity of 2.45 × 1012 Jones at a 0 V bias. Notably, these devices show high distinguishability (gres) factors of -0.58 and +0.54 based on (R,S-MBA0.5nBA0.5)2PbI4 perovskites, respectively, surpassing the performance of (R-MBA)2PbI4-based devices by over 3-fold and setting a record for CPL detectors based on chiral 2D n = 1 perovskites.

Circularly Polarized Luminescence in Zero-Dimensional Antimony Halides: Structural Distortion Controlled Luminescence Thermometer

Materials emitting circularly polarized luminescence (CPL) have been intensively studied for their promising applications in various fields. However, developing tunable and responsive CPL materials in a wide wavelength range remains a great challenge. Here, a pair of chiral (R,R/S,S-DCDA)₃Sb₂Cl₁₂ (DCDA = dimethyl-1,2-cyclohexanediamine divalent cation) shows efficient broadband yellow emission with a photoluminescence (PL) quantum yield of 27.6% with a CPL asymmetry factor of 3 × 10^-3. The associated chiroptical activity is attributed to the efficient chiral transfer as well as the self-trapped exciton emission originating from the large distortion of the inorganic blocks. Notably, (R,R/S,S-DCDA)₃Sb₂Cl₁₂ exhibits a large red-shift emission exceeding 100 nm upon lowering temperature. An excellent linear correlation of the PL wavelength on temperature indicates that the compounds can be used as PL thermometers, which originates from a temperature-dependent linear structural distortion of the [SbCl₆] emitter. This work inspires the potential utilization of CPL-emitting materials as responsive light sources.

On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices

The outstanding performance and facile processability turn two-dimensional materials (2DMs) into the most sought-after class of semiconductors for optoelectronics applications. Yet, significant progress has been made toward the hybrid integration of these materials on silicon photonics (SiPh) platforms for a wide range of mid-infrared (MIR) applications. However, realizing 2D materials with a strong optical response in the NIR-MIR and excellent air stability is still a long-term goal. Here, we report a waveguide integrated photodetector based on a novel 2D GeP. This material uniquely combines narrow and wide tunable bandgap energies (0.51-1.68 eV), offering a broadband operation from visible to MIR spectral range. In a significant advantage over graphene devices, hybrid Si/GeP waveguide photodetectors work under bias with a low dark current of few nano-amps and demonstrate excellent stability and reproducibility. Additionally, 65 nm thick GeP devices integrated on silicon waveguides exhibit a remarkable photoresponsivity of 0.54 A/W and attain high external quantum efficiency of ∼ 51.3% under 1310 nm light and at room temperature. Furthermore, a measured absorption coefficient of 1.54 ± 0.3 dB/µm at 1310 nm suggests the potential of 2D GeP as an alternative infrared material with broad optical tunability and dynamic stability suitable for advanced optoelectronic integration.