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Zhang J, Zhang H, Qiu J. Single-pulse three-dimensional parallel recording in glass using a feedback system. OPTICS LETTERS 2024; 49:4975-4978. [PMID: 39208012 DOI: 10.1364/ol.533186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Accepted: 08/10/2024] [Indexed: 09/04/2024]
Abstract
High-quality three-dimensional computer-generated holograms (3D-CGHs) are crucial for programmable 3D femtosecond laser parallel recording (3D-FLPR). In this study, we introduced an innovative feedback approach for the rapid optimization of 3D-CGHs by incorporating the superposition of the calculated lens phases (CLPs) onto the 3D-CGHs within a feedback system. This feedback system, governed by coordinated control of a spatial light modulator (SLM) and a camera, served to avoid the poor quality of the ordinary CGH system. As a result, we successfully demonstrated coaxial 3D-FLPR in Ag-doped phosphate glass solely using a single fs laser pulse. Additionally, we regulated the energy distribution of the generated 3D multi-focus (3D-MF) to compensate the laser energy losses inside the glass. The presented single-pulse 3D parallel recording indicated the significant advancement facilitated by our method, particularly in enhancing the writing efficiency of optical storage.
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Zheng B, Deng L, Li J, Yao Y, Qi D, Shen Y, Sun Z, Zhang S. Single femtosecond laser pulse-induced valence state conversion in BaFCl: Sm 3+ nanocrystals for low-threshold optical storage. NANOPHOTONICS (BERLIN, GERMANY) 2024; 13:3709-3715. [PMID: 39635035 PMCID: PMC11465981 DOI: 10.1515/nanoph-2024-0181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Accepted: 05/29/2024] [Indexed: 12/07/2024]
Abstract
Femtosecond laser-induced valence state conversion (VC) in solid materials has attracted significant research attention due to its potential application in ultra-high density optical storage, boasting advantages such as ultra-high recording speed, easy reading, and high signal-to-noise ratio. However, identifying appropriate materials and technological solutions conducive to efficient single-laser-shot recording remains a pivotal challenge for practical applications. In this work, we report single femtosecond laser pulse-induced VC in BaFCl: Sm3+ nanocrystals utilizing a 4F-configuration optical imaging system comprising two-dimensional scan galvo mirrors. For the first time, we experimentally reveal the luminescence mechanisms and channels of multiphoton absorption-induced Sm2+ ions under both single and multiple 800 nm fs laser pulses. Leveraging the highly efficient single femtosecond laser pulse induced VC, we demonstrate a prototype optical storage experiment by sweeping the recording laser pulse. Remarkably, a threshold pulse energy as low as ∼100 nJ for effective single-laser-shot recording in BaFCl: Sm3+ nanocrystals is obtained under the current experimental conditions. Our investigations offer profound insights into the physical mechanisms underlying femtosecond laser induced VC in solid materials, thereby promoting the prospects of VC based optical storage toward practical applications.
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Affiliation(s)
- Biao Zheng
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
- Fujian Key Laboratory of Functional Marine Sensing Materials, College of Material and Chemical Engineering, Minjiang University, Fuzhou350108, China
| | - Lianzhong Deng
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Jie Li
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Yunhua Yao
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Dalong Qi
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Yuecheng Shen
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Shian Zhang
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan030006, China
- Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University and Shandong Normal University, East China Normal University, Shanghai200241, China
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Yu Y, Han D, Wei H, Tang Z, Luo L, Hong T, Shen Y, Zheng H, Wang Y, Wang R, Zhu H, Deng S. Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1067. [PMID: 36985961 PMCID: PMC10053685 DOI: 10.3390/nano13061067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Revised: 03/09/2023] [Accepted: 03/13/2023] [Indexed: 06/18/2023]
Abstract
With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential of aluminum nitride (AlN) as an ultraviolet luminescent material was studied. An ultraviolet light-emitting device, equipped with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as cathodoluminescent material, was fabricated. In operation, square high-voltage pulses with a 100 Hz repetition frequency and a 10% duty ratio were applied to the anode. The output spectra reveal a dominant ultraviolet emission at 330 nm with a short-wavelength shoulder at 285 nm, which increases with the anode driving voltage. This work has explored the potential of AlN thin film as a cathodoluminescent material and provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Furthermore, while using AlN thin film and a carbon nanotube array as electrodes, this ultraviolet cathodoluminescent device can be more compact and versatile than conventional lamps. It is anticipated to be useful in a variety of applications such as photochemistry, biotechnology and optoelectronics devices.
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Affiliation(s)
- Yangcheng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Dong Han
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Haiyuan Wei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Ziying Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Lei Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Tianzeng Hong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Shen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Huying Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yaqi Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Runchen Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hai Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Sun Y, Yin W, Yao Q, Ren X, Song J, Dai Y. Temporal modulation toward femtosecond laser-induced nonlinear ionization process. OPTICS LETTERS 2022; 47:6045-6048. [PMID: 37219168 DOI: 10.1364/ol.471276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 10/27/2022] [Indexed: 05/24/2023]
Abstract
The temporal chirp of single femtosecond (fs) pulses will affect the laser-induced ionization process. By comparing the ripples induced by negatively and positively chirped pulses (NCPs and PCPs), the growth rate showed a significant difference, resulting in a depth inhomogeneity of up to 144%. A carrier density model tailored with temporal characteristics showed that NCPs could excite a higher peak carrier density, contributing to a highly efficient generation of surface plasmon polaritons (SPPs) and overall advancement of the ionization rate. Such distinction originates from their contrary incident spectrum sequences. Current work reveals that temporal chirp modulation can control the carrier density in ultrafast laser-matter interaction, which possibly brings an unusual acceleration for surface structure processing.
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