Design of a binary metal micron grating and its application in near-infrared hot-electron photodetectors

Reversibly Alterable Hot-Electron Photodetection Without Altering Working Wavelengths Through Phase-Change Material Sb2S3

Generally, the responsivities of hot-electron photodetectors (HE PDs) are mainly dependent on the device working wavelengths. Therefore, a common approach to altering device responsivities is to change the working wavelengths. Another strategy for manipulating electrical performances of HE PDs is to harness electric bias that can be used to regulate hot-electron harvesting at specified working wavelengths. However, the reliance on bias hampers the flexibility in device operations. In this study, we propose a purely planar design of HE PDs that contains the phase-change material Sb2S3, realizing reversibly alterable hot-electron photodetection without altering the working wavelengths. Optical simulations show that the designed device exhibits strong absorptance (>0.95) at the identical resonance wavelengths due to the excitations of Tamm plasmons (TPs), regardless of Sb2S3 phases. Detailed electrical calculations demonstrate that, by inducing Sb2S3 transitions between crystalline and amorphous phases back and forth, the device responsivities at TP wavelengths can be reversibly altered between 59.9 nA/mW to 128.7 nA/mW. Moreover, when device structural parameters are variable and biases are involved, the reversibly alterable hot-electron photodetection at specified TP wavelengths is maintained.

Grating-assisted hot-electron photodetectors for S- and C-band telecommunication

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.