Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate.
Heliyon 2023;
9:e14643. [PMID:
37035367 PMCID:
PMC10073759 DOI:
10.1016/j.heliyon.2023.e14643]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 03/10/2023] [Accepted: 03/14/2023] [Indexed: 03/19/2023] Open
Abstract
This study was conducted to determine whether the simultaneous injections of Ar+ ions and tetraethyl orthosilicate (TEOS) to a substrate are able to fabricate a film on the substrate. The Ar+ ion energy was 100 eV. After the injections, we found a film deposited on the substrate. Following the analyses of the film with X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy, it was found that the deposited film was silicon dioxide (SiO2). We conclude that the low-energy Ar+ ion-beam-induced deposition method using TEOS is useful for the growth of SiO2 films.
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