Uncooled Infrared Microbolometer Arrays and their Characterisation Techniques

Analyzing the Bolometric Performance of Vanadium Oxide Thin Films Modified by Carbon Nanotube Dispersions

The influence of carbon nanotube (CNT) dispersions on the electrical properties and noise signal amplitude of VOx films is investigated. For a critical range of the CNT dispersion density on VOx films, the intrinsic properties of the VOx films are modified by the CNTs. The CNT concentrations reported in this work are about 0.3 μg/cm2 and 1.6 μg/cm2, allowing for low density and high density dispersions on the VOx film surface to be investigated. These values are higher than the percolation threshold of about 0.12 μg/cm2 for these films. The composite film exhibits a significant reduction in the temperature coefficient of resistance (TCR) (from ≈3.8% K-1 to ≈0.3% K-1) for high density dispersions. In contrast, while VOx-CNT composites with low density single wall CNT dispersions exhibit no significant change in TCR values, an approximate two orders of magnitude reduction in the low frequency 1/f noise is measured. The noise signal amplitude measured at 0.1 V and at 1.0 Hz reduces from 6 × 10-5V/(Hz) for VOx films to 5 × 10-7V/(Hz) for the low density SWCNT dispersion on VOx film and to 3 × 10-6V/(Hz) for the low density MWCNT dispersion on VOx film. The CNT concentration is the critical factor for yielding the observed changes in conductivity and low frequency noise. The results presented in this work provide a better understanding of VOx-based composites, thereby enabling the development of new, versatile and functional materials for device applications.

Phase B vanadium dioxide: characteristics, synthesis and applications

Starting from the numerous and unique characteristics of VO2(B), we will introduce to readers the research progress of VO2(B) in recent years, including the detailed mainstream methods for its preparation and popular fields of application.

Microbolometer with a salicided polysilicon thermistor in CMOS technology

The metal-type microbolometers in CMOS technology normally suffer low resistivity and high thermal conductivity, limiting their performance and application areas. In this paper, we demonstrate a polysilicon microbolometer fabricated in 0.18 µm CMOS and post-CMOS processes. The detector is composed of a SiO₂ absorber coupled with a salicided poly-Si thermistor that has a high resistivity of 1.37×10^-4 Ω·cm and low thermal conductivity of 18 W/m·K. It is experimentally shown that the microbolometer with a 40 µm × 40 µm pixel size has a maximum responsibility and detectivity of 2.13×10⁴ V/W and 2.33×10⁹ cmHz^1/2/W, respectively. The results are superior to the reported metal-type and diode-type microbolometers in the CMOS process and provide good potential for a low-cost, high-performance, uncooled microbolometer array for infrared imaging applications.

Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process

To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 μm or 12 μm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.

Rapid super resolution for infrared imagery

Infrared (IR) imagery is used in agriculture for irrigation monitoring and early detection of disease in plants. The common IR cameras in this field typically have low resolution. This work offers a method to obtain the super-resolution of IR images from low-power devices to enhance plant traits. The method is based on deep learning (DL). Most calculations are done in the low-resolution domain. The results of each layer are aggregated together to allow a better flow of information through the network. This work shows that good results can be achieved using depthwise separable convolution with roughly 300K multiply-accumulate computations (MACs), while state-of-the-art convolutional neural network-based super-resolution algorithms are performed with around 1500K MACs. MTF analysis of the proposed method shows a real ×4 improvement in the spatial resolution of the system, out-preforming the diffraction limit. The method is demonstrated on real agricultural images.

Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), pn-junction diode (with p-body doping and without doping), and resistors (n⁺ or p⁺ single crystalline Si and n⁺ polycrystalline Si) were designed and characterized for its possible use in 1-THz antenna-coupled bolometers. The use of a half-wave dipole antenna connected to the heater end was assumed, which limited the integrated temperature sensor/heater area to be 15 × 15 µm. Our main focus was to evaluate the performances of the temperature sensor/heater part, and the optical coupling between the incident light and heater via an antenna was not included in the evaluation. The electrothermal feedback (ETF) effect due to the bias current was considered in the performance estimation. A comparative analysis of various SOI bolometers revealed the largest responsivity (R_v) of 5.16 kV/W for the n-channel MOSFET bolometer although the negative ETF in MOSFET reduced the R_v. The noise measurement of the n-channel MOSFET showed the NEP of 245 pW/Hz^1/2, which was more than one order of magnitude smaller than that of the n⁺ polycrystalline Si resistive bolometer (6.59 nW/Hz^1/2). The present result suggests that the n-channel MOSFET can be a promising detector for THz applications.

Characterization and Performance of a Thermal Camera Communication System

This work presents a novel communications technology named Thermal Camera Communication (TCC), which is analogous to Optical Camera Communication (OCC). Thermographic cameras and Peltier cells are proposed as receiver and transmitter, respectively, changing completely their usual field of application. Furthermore, a comprehensive characterization of the Peltier-Thermal camera pair is carried out, presenting their bandwidth, achievable data rate under On-Off-Keying (OOK) modulation, noise characteristics, and energy efficiency. A comparison against the current state-of-the-art OCC technology is also provided, showing that TCC is a promising technology suitable for sensor networks. The thorough analysis of TCC performed in this work shows that commercial Peltier cells can be re-thought under a communications viewpoint in order to improve their performance. This novel communication technology can be applied in environments such as the access to public transportation or buildings due to the new health emergency situation. The use of thermographic cameras will become massive and dual measurement and communication purposes could be considered for applications such as sensor networks, using a yet unexploited wavelength range.

Applications of UAV Thermal Imagery in Precision Agriculture: State of the Art and Future Research Outlook

Low-altitude remote sensing (RS) using unmanned aerial vehicles (UAVs) is a powerful tool in precision agriculture (PA). In that context, thermal RS has many potential uses. The surface temperature of plants changes rapidly under stress conditions, which makes thermal RS a useful tool for real-time detection of plant stress conditions. Current applications of UAV thermal RS include monitoring plant water stress, detecting plant diseases, assessing crop yield estimation, and plant phenotyping. However, the correct use and interpretation of thermal data are based on basic knowledge of the nature of thermal radiation. Therefore, aspects that are related to calibration and ground data collection, in which the use of reference panels is highly recommended, as well as data processing, must be carefully considered. This paper aims to review the state of the art of UAV thermal RS in agriculture, outlining an overview of the latest applications and providing a future research outlook.

Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region

An analytic method for a complementary metal-oxide-semiconductor (CMOS) terahertz plasmon detector operating in the subthreshold region is presented using the equivalent circuit model. With respect to design optimization of the detector, the signal transmission from the antenna port to the output of the detector is described by using the proposed circuit model, which does not include a complicated physical operating principle and mathematical expressions. Characteristics from the antenna port to the input gate node of the detector are analyzed through the superposition method by using the characteristic impedance of transmission lines. The superposition method shows that the effect of interconnection lines at the input is simplified with the optimum bias point. The characteristics of the plasmon detection are expressed by using small-signal analysis of the single transistor at the sub-threshold operation. The results of the small-signal analysis show that the unity gain preamplifier located between the detector core and the main amplifier can improve the detection performances such as the voltage responsivity and the noise equivalent power. The measurement results using the fabricated CMOS plasmon detector at 200 GHz suggest that the unity gain preamplifier improves the detector performances, which are the same results as we received from the proposed analytic method.

Joint estimation of unknown radiometric data, gain, and offset from thermal images

Low cost, weight, and size microbolometer-based thermal focal plane arrays are attractive for thermal-imaging applications. Under environmental loads like those in agricultural remote sensing, these cameras tend to suffer from drift in gain and offset with time and thus require constant calibration. Our goal is to skip this step via computational imaging. In a previous work we estimated the unknown offset value and radiometric image of an object, given the calibrated gain, from a pair of successive images taken at two different blur levels, eliminating the need for offset calibration due to temperature variation. Here, we extend our model to a case with unknown gain and offset. We show that these values, as well as the objects' radiometric value, can be found jointly by minimizing a cost function relying on N pairs of blurred and sharp images. The method addresses both space-invariant and space-variant cases. Simulations show promising accuracy with error characterized by root mean squared error of less than 1.6°C.

Radiometric imaging by double exposure and gain calibration

Due to low cost and small size, uncooled microbolometer-based thermal focal plane arrays are very attractive for radiometry. However, being non-cooled, they suffer from temporally and spatially dependent changes that require constant calibration. While the gain calibration can be reasonably realized by two-point correction, the offset due to internal radiation loads poses a complicated calibration scheme. We present a new computational optics approach that simplifies the essential calibration for temperature offset. Using two successive images of the object taken with different known blur levels, one can eliminate the object term from the image-formation equation, resulting in an equation for the unknown sensor offset. A general algebraic model is presented for the space-variant case followed by solutions using both direct inverse method and iterative solver. The new scheme allows restoration of the radiometric value within 1% error with the direct method, and 0.2% error with the iterative scheme. Account of the influence of realistic lens positioning error on restoration accuracy was given. Results using direct inverse methods for restoring the radiometric values yield restoration error with a good average error of 3.7% and less.

Sensing properties of multiwalled carbon nanotubes grown in MW plasma torch: electronic and electrochemical behavior, gas sensing, field emission, IR absorption

Vertically aligned multi-walled carbon nanotubes (VA-MWCNTs) with an average diameter below 80 nm and a thickness of the uniform VA-MWCNT layer of about 16 μm were grown in microwave plasma torch and tested for selected functional properties. IR absorption important for a construction of bolometers was studied by Fourier transform infrared spectroscopy. Basic electrochemical characterization was performed by cyclic voltammetry. Comparing the obtained results with the standard or MWCNT‐modified screen-printed electrodes, the prepared VA-MWCNT electrodes indicated their high potential for the construction of electrochemical sensors. Resistive CNT gas sensor revealed a good sensitivity to ammonia taking into account room temperature operation. Field emission detected from CNTs was suitable for the pressure sensing application based on the measurement of emission current in the diode structure with bending diaphragm. The advantages of microwave plasma torch growth of CNTs, i.e., fast processing and versatility of the process, can be therefore fully exploited for the integration of surface-bound grown CNTs into various sensing structures.

Antenna array connections for efficient performance of distributed microbolometers in the IR

Optical antennas and resonant structures have been extensively investigated due to its potential for electromagnetic detection and energy harvesting applications. However their integration into large arrays and the role of connection lines between individual antennas has drawn little attention. This is necessary if we want to exploit its potential constructively and to enable economical large-scale fabrication. In this contribution we point out some features that an efficient antenna array should address. Experimental measurements on aluminum microbolometers are compared to electromagnetic simulations, it is shown that the finite size of a real array and the interconnection lines interact and affect the global performance.