Far Infrared Measurement of the Dielectric Properties of GaAs and CdTe at 300 K and 8 K

The real refractive index n and power absorption coefficient alpha of high resistivity GaAs and CdTe have been directly measured at 300 K and 8 K in the wavelength region from 12.5 micro to 300 micro. This spectral region contains the fundamental lattice resonance of both materials: 37.2 micro for GaAs and 71.4 micro for CdTe. This resonance causes large dispersion in the linear material properties. Single Drude-type oscillators have been visually fit to the measured n data with the results that for GaAs, epsilon(dc)' = 12.8 +/- 0.5 at 300 K and 12.6 +/- 0.5 at 8 K, and epsilonalpha(') = 10.9 +/- 0.4 at 300 K and 8 K ; for CdTe, epsilon(dc)' = 9.4 +/- 0.4 at 300 K and 9.0 +/- 0.4 at 8 K, and epsilon(alpha)' = 6.7 +/- 0.3 at 300 K and 8 K. The GaAs data clarifies the role of dispersion in n in the 5-20 micro region where previous results differ considerably. For both materials the n and alpha data in the region past 30 micro are the first to be reported.

The Reflection and Transmission of Infrared Materials. VI: Bibliography

The papers listed deal with the reflection and transmission of BN, CdS, CdTe, GaAs, GaSb, GaP, InAs, InSb, InP, RbBr, RbCl, RbI, SrTiO(3), and Te. Index of refraction papers are also included. The papers are listed according to material and are arranged alphabetically by the first author in each section.