Gas chromatography of indium in macroscopic and carrier-free amounts using quartz and gold as stationary phases

Dry-Etchable Molecular Layer-Deposited Inhibitor Using Annealed Indicone Film for Nanoscale Area-Selective Deposition

In semiconductor production, the technology node of a device is becoming extremely small below 5 nm. Area selective deposition (ASD) is a promising technique for creating improved overlay or self-alignment, remedying a conventional top-down method. However, the conventional materials and process (self-assembled monolayer, polymer and carbon film fabricated by chemical vapor deposition, and spin coating) for ASD are not suitable for highly conformal deposition. Thus, we investigated a new strategy to deposit conformal films in ASD by molecular layer deposition (MLD). The MLD processes were conducted for an indicone film deposited by INCA-1 (bis(trimethysily)amidodiethyl indium) and hydroquinone (HQ), as well as an alucone film deposited by TMA (trimethylaluminum) and HQ. After thermal heat treatment of the MLD films, variations in thickness, refractive index, and constituent elements of the annealed MLD films were investigated. The indicone film was used as an inhibiting layer for ASD and was etchable with a dry-etching process. The reactive ion etching process on annealed indicone film was optimized according to plasma power, gas concentration, and working pressure. Ruthenium (Ru) ALD was then performed on the annealed MLD films to investigate nucleation delaying cycles and inhibiting properties. A patterned substrate with an MLD/Si line was created via the RIE process, which was allowed to observe the selectivity of the annealed MLD films. In addition, a patterned substrate of SiO₂/annealed indicone/Mo was used to investigate the Ru-selective ALD at the nanoscale. The Ru thin film was selectively deposited on the Mo side-wall surface of a 3D trench structure. The growth of the Ru film was inhibited selectively on an annealed indicone surface of approximately 5 nm.

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

Area selective atomic layer deposition (AS-ALD) is a promising future technology for the realization of a 5 nm scale Si complementary field effect transistor (FET) and its application in industry. AS-ALD is one of the "bottom-up" technologies, which is a key process that can reduce the cost of fabrication and decrease positional error as an alternative to the conventional "top down" technology. We researched an inhibitor for AS-ALD using molecular layer deposited (MLD) films annealed by electron beam irradiation (EBI). We studied the effect of EBI on an indicone film that was fabricated by using bis(trimethylsilyl)amidodiethyl indium (INCA-1), hydroquinone (HQ), an alucone film fabricated by using trimethylaluminum (TMA) and 4-mercaptophenol (4MP). The EBI effect on MLD films was evaluated by investigating the changes in thickness, composition and structure. In order to observe the selectivity of the annealed indicone film, atomic layer deposition of ZnO was performed on the annealed indicone/silicon line pattern, and it was found that the surface of annealed indicone can inhibit ALD of ZnO for 20 cycles as compared to a Si surface.

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition

Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing. Conformal thin films of "indicone" (indium alkoxide polymer) are fabricated by MLD using INCA-1 (bis(trimethylsily)amidodiethylindium) and HQ (hydroquinone). Then, the MLD indicone films are annealed by a thermal heat treatment under vacuum. The properties of the indicone thin films with different annealing temperatures were measured with multiple optical, physical, and chemical techniques. Interestingly, a nearly complete removal of indium from the film was observed upon annealing to ca. 450 °C and above. The chemical mechanism of the thermal transformation of the indicone film was investigated by density functional theory calculations. Then, the annealed indicone thin films were applied as an inhibiting layer for the subsequent ALD of ZnO, where the deposition of approximately 20 ALD cycles (equivalent to a thickness of approximately 4 nm) of ZnO was successfully inhibited. Finally, patterns of annealed MLD indicone/Si substrates were created on which the area-selective deposition of ZnO was demonstrated.

The periodic table – an experimenter’s guide to transactinide chemistry

The fundamental principles of the periodic table guide the research and development of the challenging experiments with transactinide elements. This guidance is elucidated together with experimental results from gas phase chemical studies of the transactinide elements with the atomic numbers 104–108 and 112–114. Some deduced chemical properties of these superheavy elements are presented here in conjunction with trends established by the periodic table. Finally, prospects are presented for further chemical investigations of transactinides based on trends in the periodic table.

Adsorption interaction of carrier-free thallium species with gold and quartz surfaces

The adsorption interactions of thallium and its compounds with gold and quartz surfaces were investigated. Carrier-free amounts of thallium were produced in nuclear fusion reactions of alpha particles with thick gold targets. The method chosen for the studies was gas thermochromatography and varying the redox potential of the carrier gases. It was observed that thallium is extremely sensitive to trace amounts of oxygen and water, and can even be oxidized by the hydroxyl groups located on the quartz surface. The experiments on a quartz surface with O2, He, H2 gas in addition with water revealed the formation and deposition of only one thallium species – TlOH. The adsorption enthalpy was determined to be Δ H SiO2 ads(TlOH) = −134 ± 5 kJ mol−1. A series of experiments using gold as stationary surface and different carrier gases resulted in the detection of two thallium species – metallic Tl (H2 as carrier gas) and TlOH (O2, O2+H2O and H2+H2O as pure carrier gas or carrier gas mixture) with Δ H Au ads(Tl) = −270 ± 10 kJ mol− and Δ H Au ads(TlOH) = −146 ± 3 kJ mol−1. These data demonstrate a weak interaction of TlOH with both quartz and gold surfaces. The data represent important information for the design of future experiments with the heavier homologue of Tl in group 13 of the periodic table – element 113 (E113).