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For:
Wood RF
, Lowndes DH, Christie WH.
Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment.
ACTA ACUST UNITED AC
2011. [DOI:
10.1557/proc-1-231
]
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Citation(s) in
RCA
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Impact Index Per Article: 0.5
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[Indexed: 11/13/2022]
Number
Cited by Other Article(s)
1
Williams J
, Pearton S. Rapid Annealing of GaAs and Related Compounds.
ACTA ACUST UNITED AC
2011. [DOI:
10.1557/proc-35-427
]
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Citation(s) in
RCA
: 14
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Impact Index Per Article: 1.1
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[Indexed: 11/13/2022]
Abstract
ABSTRACT
In recent years, rapid annealing of GaAs has been employed to activate ion implanted dopants and to produce metal-semiconductor contacts. More recently, rapid heating techniques have been used to anneal heterostructures without degrading requisite high mobilities of SDHT devices. This paper reviews the various annealing regimes which are useful for heat treating GaAs and related compounds. Examples are chosen which illustrate unique and potentially useful features of rapid annealing.
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