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Yasaka T, Uenaga S, Yasutake H, Takakura M, Miyazaki S, Hirose M. Cleaning and Oxidation of Heavily Doped Si Surfaces. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-259-385] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTHF-treated Si surfaces and the oxidation kinetics in pure water or in clean room air have systematically been studied by x-ray photoelectron spectroscopy (XPS). The oxidation of heavily-doped n-type Si appears to proceed parallel to the surface, resulting in the layer-by-layer oxidation. The oxide growth rate in pure water for heavily-doped n-type Si is significantly higher than that of heavily-doped ptype Si. This is explained by the electron tunneling from the Si conduction band to adsorbed O2 molecules to form the O2 state. O2 ions easily decompose and induce a surface electric field, enhancing the oxidation rate. The growth rate of native oxide on heavily-doped n-type Si is less sensitive to the crystallographic orientations than the case of lightly doped Si where the steric hindrance against oxygen molecules significantly lowers the oxidation rate of the (110) and (111) surfaces. We suggest that the decomposed oxygen can penetrate into Si without steric hindrance. It is also found that the oxidation of heavily-doped n-type Si in pure water is effectively suppressed by adding a small amount (10 ∼ 3600 ppm) of HCI.
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Hirose M, Yasaka T, Hiroshima M, Takakura M, Miyazaki S. Structural and Electrical Characterization of U Ltra-Thin SiO2 Grown on Hydrogen-Terminated Silicon Surfaces. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-315-367] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution. ACTA ACUST UNITED AC 1994. [DOI: 10.1007/bf00332216] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Dittrich T, Angermann H, Füssel W, Flietner H. Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air. ACTA ACUST UNITED AC 1993. [DOI: 10.1002/pssa.2211400217] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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