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Street R, Weisfield R, Nelson S, Nylen P, Wu X. Page Sized a-Si:H 2-Dimensional Imaging Arrays. ACTA ACUST UNITED AC 1993. [DOI: 10.1557/proc-297-957] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
The first page-sized a-Si:H sensor array intended for use as a contact imager is described. The array collects light very efficiently, making it well suited to high speed document input and medical x-ray imaging (by the addition of a phosphor). The array structure, control electronics and imaging properties are discussed. Data is presented from a 13" diagonal array with 512⋗560 pixels of size 0.45 mm, although the technology is capable of higher resolution. The image is read-out using 8 ICs containing 64 voltage sensitive amplifiers. The intrinsic dynamic range of the imaging array is about 105, but is limited to <1000 by the read-out amplifiers. The minimum read-out time of about 25 msec allows real time imaging.
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Abstract
2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.
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