Cleaning and Oxidation of Heavily Doped Si Surfaces

Two-step ball-milling synthesis of a Si/SiOx/C composite electrode for lithium ion batteries with excellent long-term cycling stability

SiO_x-based anodes have attracted tremendous attention owing to their low cost, higher theoretical capacity than graphite and lower volume expansion than pure silicon.

Nitrogen-doped carbon coated SiO nanoparticles Co-modified with nitrogen-doped graphene as a superior anode material for lithium-ion batteries

One great challenge in the development of lithium-ion batteries is to simultaneously achieve superior reversible specific capacity, cyclic life and rate capability.

Structural Imperfections in Ulrathin Oxides Grown on Hydrogen Terminated Silicon Surfaces

The initial stage of oxidation of 40wt-% NH4F treated Si(111) surface at 300 °C in dry oxygen with a pressure of 133 Pa and the subsequent oxidation at 600 and 800°C were studied. It was found from the analysis of Si 2p photoelectron spectra that non-uniform layer by layer oxidation proceeds at 300°C, while the layer by layer oxidation proceeds at 600 and 800°C. Furthermore, at these temperatures the interface becomes atomically flat with the progress of oxidation.

The Effect of contamination solutions and substrate conditions on Copper Particle Growth Behavior

Cu particle growth behavior on two silicon substrates, amorphous and single crystal silicon, has been investigated using two contamination solutions. This study reveals that the growth behavior of Cu particle depends on substrate conditions and copper contamination solutions. Contamination level is independent of split conditions. From the SEM images of an amorphous silicon shows a big difference in the number of particles depending on copper contamination solution. The amorphous silicon has similar native oxide thickness in ultrapure water spiked with CuF2 and CuCl2, whereas the single crystal silicon is different from the native oxide thickness depending on copper contamination solution. When 1 ppm of Cu in ultrapure water was spiked as a function of time, the amount of Cu impurity on amorphous silicon in the early dipping stage was measured 10 times higher than that on single crystal silicon for both of copper contamination solutions.