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Citation(s) in RCA

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For: Hellman ES, Brandle CD, Schneemeyer LF, Wiesmann D, Brener I, Siegrist T, Berkstresser GW, Buchanan DNE, Hartford EH. ScAlMgO4: An Oxide Substrate for GaN Epitaxy. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-395-51] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Number Cited by Other Article(s)
1
Miskys CR, Kelly MK, Ambacher O, Stutzmann M. Freestanding GaN-substrates and devices. ACTA ACUST UNITED AC 2003. [DOI: 10.1002/pssc.200303140] [Citation(s) in RCA: 60] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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