Martel R, Derycke V, Lavoie C, Appenzeller J, Chan KK, Tersoff J, Avouris P. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.
PHYSICAL REVIEW LETTERS 2001;
87:256805. [PMID:
11736597 DOI:
10.1103/physrevlett.87.256805]
[Citation(s) in RCA: 88] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2001] [Indexed: 05/19/2023]
Abstract
Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.
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