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Abstract
▪ Abstract We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.
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Affiliation(s)
- J. F. Scott
- Max-Planck Institute for Microstructural Physics, Halle, Saale D-06120, Germany
- School of Physics, University of New South Wales, Sydney NSW, 2052, Australia
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Abstract
▪ Abstract This article reviews the defect chemistry of perovskite ferroelectric oxides such as barium titanate and lead zirconate titanate. Such metal oxides are being considered for a wide range of applications that include nonvolatile memories and dynamic random access memories. Time-dependent degradation of these devices is controlled at least in part by point defects, which are determined by the defect chemistry of the material. The role of point defects on Pb(Zr,Ti)O3 thin film device properties such as fatigue, switching, polarization relaxation and imprint is discussed.
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Affiliation(s)
- Sanjeev Aggarwal
- Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
| | - R. Ramesh
- Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
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