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For: Okumura H, Balakrishnan K, Feuillet G, Ohta K, Hamaguchi H, Chichibu S, Ishida Y, Yoshida S. Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-449-435] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Number Cited by Other Article(s)
1
Taniyasu Y, Suzuki K, Lim D, Jia A, Shimotomai M, Kato Y, Kobayashi M, Yoshikawa A, Takahashi K. Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE. ACTA ACUST UNITED AC 2000. [DOI: 10.1002/1521-396x(200007)180:1<241::aid-pssa241>3.0.co;2-a] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
2
Gamez-Cuatzin H, Tardy J, Rojo-Romeo P, Philippe A, Bru-Chevallier C, Souifi A, Guillot G, Martinez-Guerrero E, Feuillet G, Daudin B, Aboughé-Nzé P, Monteil Y. Electroluminescence Characterization of Cubic Gallium Nitride p–n Junctions Grown on SiC/Si Substrates by MBE. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199911)176:1<131::aid-pssa131>3.0.co;2-d] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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