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White CW, Withrow SP, Meldrum A, Budai JD, Hembree DM, Zhu JG, Henderson DO, Prawerttt S. Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-507-249] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTSi nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.
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