Filled Skutterudite Antimonides: Validation of the Electron-Crystal Phonon-Glass Approach to New Thermoelectric Materials

Dependence of the Elastic Moduli of Skutterudites on Density and Temperature

The dependency of Young’s and shear modulus on relative density and temperature was determined for three series of skutterudites: p-type MmyFe3CoSb12 (y = 0.70, 0.80), p-type DDyFe3CoSb12 (y = 0.65, 0.68) and n-type Sr0.07Ba0.07Yb0.07Co4Sb12. For all three groups of materials the dependency of Young’s modulus, E, on the density and temperature is linear: E(d) = 4.1(1)×d – 268(3) GPa (d is the relative density in %), ΔE/ΔT = 0.20(1) GPa/K, thus allowing extrapolation of E as a function of temperature and towards 100% density.

Properties of Novel Thermoelectrics from First Principles Calculations

The use of first principles methods based on density functional theory to investigate novel thermoelectric materials is illustrated for several empty and filled skutterudite compounds, including CoSb3, COP3, La(Fe,Co)4Sb12 and La(Fe,Co)P12. Band structures and their relationship to transport properties especially as regards optimization of thermoelectric properties is discussed. Phonon models constructed from calculations and existing experimental data for CoSb3 are presented. These have been extended to the filled skutterudites, particularly LaFe4Sb12 using additional first principles calculations to fix the La related parameters in the model. This model allows an interpretation of neutron scattering data as well as an understanding of the low frequency phonon modes that transport heat in these compounds.

Thin-film thermoelectric devices with high room-temperature figures of merit

Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.