UV-Laser Ablation of HFO2 Dielectric Layers on SiO2 for Mask Preparation

Subthreshold Laser Ablation Measurements by Langmuir Probe Method for ns Irradiation of HfO2 and ZrO2

The unbiased Langmuir probe (LP) method was used to perform measurements on HfO₂ and ZrO₂ samples around the laser ablation threshold on a wide range of irradiation conditions. Important changes in the lifetime (from ms to μs) and the shape of the charge particle current were seen with the increase of the laser fluence. The ablation threshold was estimated by evaluating the overall average ablated charge as a function of the laser fluence. Above the ablation threshold, the generation of high kinetic species is seen, which can reach several keV. An important jump in ion acceleration potential is observed for values above 1 J/cm², which coincides with the dominant presence of negative ions in the plasma. The evolution of several plasma parameters (ion density, expansion velocity, electron temperature, Debye length) was investigated and correlated with the fundamental ablation mechanism involved in various irradiation regimes. The LP data were correlated with COMSOL simulations on the maximum surface temperature reached during irradiation. Important correlations between the evaporation and melting processes and ablation threshold fluence and ion acceleration phenomena are also reported.