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For: Terada N, Yata S, Terakawa A, Okamoto S, Wakisaka K, Kiyama S. Very Wide-Gap and Device-Quality a-Si:H from Highly H2 Diluted SiH4 Plasma Decomposed by High RF Power. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-557-145] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]

For:	Terada N, Yata S, Terakawa A, Okamoto S, Wakisaka K, Kiyama S. Very Wide-Gap and Device-Quality a-Si:H from Highly H2 Diluted SiH4 Plasma Decomposed by High RF Power. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-557-145] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]

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(The first 100,000 artilces are displayed in RCA.)