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Citation(s) in RCA

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For: Kurokawa A, Maeda T, Sakamoto K, Itoh H, Nakamura K, Koike K, Moon D, Ha Y, Ichimura S, Ando A. Ultrathin Silicon Dioxide Formation By Ozone On Ultraflat Si Surface. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-567-21] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Number Cited by Other Article(s)
1
Ichimura S, Koike K, Kurokawa A, Nakamura K, Itoh H. XPS analysis of ultrathin SiO2 film growth on Si by ozone. SURF INTERFACE ANAL 2000. [DOI: 10.1002/1096-9918(200008)30:1<497::aid-sia791>3.0.co;2-0] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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