Ahmad F, Lakhtakia A, Monk PB. Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells.
APPLIED OPTICS 2020;
59:1018-1027. [PMID:
32225246 DOI:
10.1364/ao.381246]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 12/06/2019] [Indexed: 06/10/2023]
Abstract
An optoelectronic optimization was carried out for an $ {{\rm Al}_\xi }{{\rm Ga}_{1 - \xi }}{\rm As} $AlξGa1-ξAs (AlGaAs) solar cell containing (i) an $ n $n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick $ n $n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
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