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Citation(s) in RCA

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For: Bersuker G, Sim JH, Young CD, Choi R, Lee BH, Lysaght P, Brown GA, Zeitzoff PM, Gardner M, Murto RW, Huff HR. Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-811-d2.6] [Citation(s) in RCA: 21] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Number Cited by Other Article(s)
1
MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS. ACTA ACUST UNITED AC 2006. [DOI: 10.1007/1-4020-4367-8_18] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
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