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Citation(s) in RCA

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For: Ruterana P, Vermaut P, Nouet G, Salvador A, Morkoç H. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE. ACTA ACUST UNITED AC 2014. [DOI: 10.1557/s109257830000168x] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Number Cited by Other Article(s)
1
TEM investigations of GaN layers grown on silicon and sintered GaN nano-ceramic substrates. CRYSTAL RESEARCH AND TECHNOLOGY 2007. [DOI: 10.1002/crat.200711020] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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