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Naik BR, Arya N, Balakrishnan V. Paper based flexible MoS 2-CNT hybrid memristors. NANOTECHNOLOGY 2024; 35:215201. [PMID: 38364265 DOI: 10.1088/1361-6528/ad2a01] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2023] [Accepted: 02/16/2024] [Indexed: 02/18/2024]
Abstract
We report for the first time MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT's in MoS2to improve the MoS2conductivity and investigate the memristor device characteristics. The device with 10% CNT shows a lowVSETvoltage of 2.5 V, which is comparatively small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ∼104s and 102cycles, making it a potential candidate in flexible painted electronics. Along with good electrical performance, it also demonstrates a high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated by percolation and defect-induced filament formation. Additionally, the device displays synaptic plasticity performance, simulating potentiation and depression processes. Furthermore, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the environmental pollution caused by electronic waste in the near future.
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Affiliation(s)
- B Raju Naik
- School of Mechanical and Materials Engineering, Indian Institute of Technology, Mandi, Himachal Pradesh-175075, India
| | - Nitika Arya
- School of Mechanical and Materials Engineering, Indian Institute of Technology, Mandi, Himachal Pradesh-175075, India
| | - Viswanath Balakrishnan
- School of Mechanical and Materials Engineering, Indian Institute of Technology, Mandi, Himachal Pradesh-175075, India
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2
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Mao X, Hao C. Recent advances in the use of composite titanium dioxide nanomaterials in the food industry. J Food Sci 2024; 89:1310-1323. [PMID: 38343295 DOI: 10.1111/1750-3841.16968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 11/08/2023] [Accepted: 01/18/2024] [Indexed: 03/12/2024]
Abstract
Titanium dioxide (TiO2 ) nanomaterials have attracted significant attention due to their good biocompatibility and potential for multifunctional applications. In the last few years, there has been growing interest in the use of TiO2 nanomaterials in the food industry. However, a systematic review of the synthesis methods, properties, and applications of TiO2 nanomaterials in the food industry is lacking. In this review, we provide a summary of the synthesis and properties of TiO2 nanomaterials and their composites, with a focus on their applications in the food industry. We also discuss the potential benefits and risks of using TiO2 nanomaterials in food applications. This review aims to promote food innovation and improve food quality and safety.
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Affiliation(s)
- Xixi Mao
- School of Marxism, Jiangnan University, Wuxi, Jiangsu, China
| | - Changlong Hao
- State Key Laboratory of Food Science and Resources, Jiangnan University, Wuxi, Jiangsu, China
- School of Food Science and Technology, Jiangnan University, Wuxi, Jiangsu, China
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3
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Chakrabartty S, Almawgani AHM, Kumar S, Kumar M, Acharjee S, Al-Shidaifat A, Poulose A, Alsuwian T. Versatility Investigation of Grown Titanium Dioxide Nanoparticles and Their Comparative Charge Storage for Memristor Devices. MICROMACHINES 2023; 14:1616. [PMID: 37630152 PMCID: PMC10456393 DOI: 10.3390/mi14081616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2023] [Revised: 08/12/2023] [Accepted: 08/14/2023] [Indexed: 08/27/2023]
Abstract
Memristive devices have garnered significant attention in the field of electronics over the past few decades. The reason behind this immense interest lies in the ubiquitous nature of memristive dynamics within nanoscale devices, offering the potential for revolutionary applications. These applications span from energy-efficient memories to the development of physical neural networks and neuromorphic computing platforms. In this research article, the angle toppling technique (ATT) was employed to fabricate titanium dioxide (TiO2) nanoparticles with an estimated size of around 10 nm. The nanoparticles were deposited onto a 50 nm SiOx thin film (TF), which was situated on an n-type Si substrate. Subsequently, the samples underwent annealing processes at temperatures of 550 °C and 950 °C. The structural studies of the sample were done by field emission gun-scanning electron microscope (FEG-SEM) (JEOL, JSM-7600F). The as-fabricated sample exhibited noticeable clusters of nanoparticles, which were less prominent in the samples annealed at 550 °C and 950 °C. The element composition revealed the presence of titanium (Ti), oxygen (O2), and silicon (Si) from the substrate within the samples. X-ray diffraction (XRD) analysis revealed that the as-fabricated sample predominantly consisted of the rutile phase. The comparative studies of charge storage and endurance measurements of as-deposited, 550 °C, and 950 °C annealed devices were carried out, where as-grown device showed promising responses towards brain computing applications. Furthermore, the teaching-learning-based optimization (TLBO) technique was used to conduct further comparisons of results.
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Affiliation(s)
- Shubhro Chakrabartty
- Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation University (K L College of Engineering), Vaddeswaram 522302, Andhra Pradesh, India;
| | - Abdulkarem H. M. Almawgani
- Electrical Engineering Department, College of Engineering, Najran University, Najran 66439, Saudi Arabia;
| | - Sachin Kumar
- Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Kattankulathur 603203, Tamil Nadu, India
| | - Mayank Kumar
- Technical Research Analyst (TRA), Electronics/Biomedical Engineering, Aranca, Mumbai 400076, Maharashtra, India;
| | - Suvojit Acharjee
- Department of Electronic and Communication Engineering, Narula Institute of Technology, Agarpara, Kolkata 700109, West Bengal, India;
| | - Alaaddin Al-Shidaifat
- Department of Nanoscience and Engineering, Centre for Nano Manufacturing, Inje University, Gimhae 50834, Republic of Korea;
| | - Alwin Poulose
- School of Data Science, Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM), Vithura, Thiruvananthapuram 695551, Kerala, India;
| | - Turki Alsuwian
- Electrical Engineering Department, College of Engineering, Najran University, Najran 66439, Saudi Arabia;
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4
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Getnet TG, Cruz NC, Rangel EC. Effect of Plasma Excitation Power on the SiOxCyHz/TiOx Nanocomposite. MICROMACHINES 2023; 14:1463. [PMID: 37512774 PMCID: PMC10383557 DOI: 10.3390/mi14071463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/24/2023] [Accepted: 06/26/2023] [Indexed: 07/30/2023]
Abstract
Titanium dioxide has attracted a great deal of attention in the field of environmental purification due to its photocatalytic activity under ultraviolet light. Photocatalytic efficiency and the energy required to initiate the process remain the drawbacks that hinder the widespread adoption of the process. Consistently with this, it is proposed here the polymerization of hexamethyldisiloxane fragments simultaneously to TiO2 sputtering for the production of thin films in low-pressure plasma. The effect of plasma excitation power on the molecular structure and chemical composition of the films was evaluated by infrared spectroscopy. Wettability and surface energy were assessed by a sessile drop technique, using deionized water and diiodomethane. The morphology and elemental composition of the films were determined using scanning electron microscopy and energy dispersive spectroscopy, respectively. The thickness and roughness of the resulting films were measured using profilometry. Organosilicon-to-silica films, with different properties, were deposited by combining both deposition processes. Titanium was detected from the structures fabricated by the hybrid method. It has been observed that the proportion of titanium and particles incorporated into silicon-based matrices depends on the plasma excitation power. In general, a decrease in film thickness with increasing power has been observed. The presence of Ti in the plasma atmosphere alters the plasma deposition mechanism, affecting film deposition rate, roughness, and wettability. An interpretation of the excitation power dependence on the plasma activation level and sputtering yield is proposed. The methodology developed here will encourage researchers to create TiO2 films on a range of substrates for their prospective use as sensor electrodes, water and air purification systems, and biocompatible materials.
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Affiliation(s)
- Tsegaye Gashaw Getnet
- Laboratory of Technological Plasmas, Institute of Science and Technology, São Paulo State University (UNESP), Sorocaba 18087-180, SP, Brazil
- Department of Chemistry, College of Science, Bahir Dar University, Bahir Dar P.O. Box 79, Ethiopia
| | - Nilson C Cruz
- Laboratory of Technological Plasmas, Institute of Science and Technology, São Paulo State University (UNESP), Sorocaba 18087-180, SP, Brazil
| | - Elidiane Cipriano Rangel
- Laboratory of Technological Plasmas, Institute of Science and Technology, São Paulo State University (UNESP), Sorocaba 18087-180, SP, Brazil
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Xiong C, Yang Z, Shen J, Tang F, He Q, Li Y, Xu M, Miao X. Nano t-Se Peninsulas Embedded in Natively Oxidized 2D TiSe 2 Enable Uniform and Fast Memristive Switching. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23371-23379. [PMID: 37155833 DOI: 10.1021/acsami.3c00818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Memristive devices, regardless of their potential applications in memory and computing scenarios, still suffer from large cycle-to-cycle and device-to-device variations due to the stochastic growth of conductive filaments (CFs). In this work, we fabricated a crossbar memristor using the 2D TiSe2 material and then oxidized it into TiO2 in the atmosphere at a moderate temperature. Such a mild oxidation approach fails to evaporate all Se into the air, and after further annealing using thermal or electrical stimulations, the remnant Se atoms gather near the interfaces and grow into nanosized crystals with relatively high conductivity. The resulting peninsula-shaped nanocrystals distort the electric field, forcing CFs to grow on them, which could largely confine the location and length of CFs. As a result, this two-terminal TiSe2/TiO2/TiSe2 device exhibits excellent resistive switching performance with a fairly low threshold voltage (Vset < 0.8 V, Vreset > 0.55 V) and high cycle-to-cycle consistency, enabling resistive switching at narrow operating variations, e.g., 500 ± 48 and 845 ± 39 mV. Our work offers a new approach to minimize the cycle-to-cycle stochasticity of the memristive device, paving the way for its applications in data storage and brain-inspired computing.
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Affiliation(s)
- Changying Xiong
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhe Yang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jiahao Shen
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Feiyu Tang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qiang He
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Yi Li
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Ming Xu
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
| | - Xiangshui Miao
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, China
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6
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Zhao X, Menzel S, Polian I, Schmidt H, Du N. Review on Resistive Switching Devices Based on Multiferroic BiFeO 3. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1325. [PMID: 37110910 PMCID: PMC10142330 DOI: 10.3390/nano13081325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/01/2023] [Accepted: 04/03/2023] [Indexed: 06/19/2023]
Abstract
This review provides a comprehensive examination of the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. By exploring possible fabrication techniques for preparing the functional BFO layers in memristive devices, the constructed lattice systems and corresponding crystal types responsible for RS behaviors in BFO-based memristive devices are analyzed. The physical mechanisms underlying RS in BFO-based memristive devices, i.e., ferroelectricity and valence change memory, are thoroughly reviewed, and the impact of various effects such as the doping effect, especially in the BFO layer, is evaluated. Finally, this review provides the applications of BFO devices and discusses the valid criteria for evaluating the energy consumption in RS and potential optimization techniques for memristive devices.
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Affiliation(s)
- Xianyue Zhao
- Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany; (X.Z.)
- Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany
| | - Stephan Menzel
- Peter Grünberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Wilhelm-Johnen-Str., 52428 Juelich, Germany
| | - Ilia Polian
- Institute of Computer Science and Computer Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
| | - Heidemarie Schmidt
- Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany; (X.Z.)
- Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany
| | - Nan Du
- Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany; (X.Z.)
- Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany
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7
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Mikhailova MA, Tekle TH, Bachinin SV, Smirnov AA, Pogosian TN, Milichko VA, Vinogradov AV, Morozov MI. Water-alcohol-TiO 2 dispersions as sustainable ink. SOFT MATTER 2023; 19:1482-1491. [PMID: 36723372 DOI: 10.1039/d2sm01590k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Nanocrystalline titanium dioxide (TiO2) is a widespread multifunctional and environmentally friendly material that has numerous applications requiring micro-/nanofabrication or thin film deposition. In most cases, the fabrication of titania films can be achieved using cost-efficient solution chemistry combined with various coating or printing techniques. The practical implementation of these methods requires the preparation of a suitable ink with properly adjusted rheological properties. Conventionally, such adjustments are achieved based on TiO2 hydrosols containing various organic surfactants and stabilizing agents. However, the use of such additives may affect the properties of the deposited functional layer, which can be crucial for electronic and optical applications. In this work, we address a comprehensive study of simple surfactant-free TiO2 dispersion systems based on various water-alcohol solvents and demonstrate the possibility of controlling the rheological properties of the titania ink in a wide range that is suitable for several printing applications. As a particular example, we demonstrate the application of a water-i-propanol-TiO2 dispersion as a functional ink for the offset printing of interference images.
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Affiliation(s)
- Mariia A Mikhailova
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
| | - Tsegai H Tekle
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
| | - Semyon V Bachinin
- Faculty of Physics and Engineering, ITMO University, St. Petersburg, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation
| | - Artyom A Smirnov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
| | - Tamara N Pogosian
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
| | - Valentin A Milichko
- Faculty of Physics and Engineering, ITMO University, St. Petersburg, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation
| | - Alexandr V Vinogradov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
| | - Maxim I Morozov
- Laboratory of Solution Chemistry of Advanced Materials and Technologies, ITMO University, Lomonosova str. 9, St.Petersburg, 191002, Russian Federation.
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8
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Chen Z, Liu W, Zhang B, Wu K, Li Z, Bing P, Tan L, Zhang H, Yao J. Nanoscale and ultra-high extinction ratio optical memristive switch based on plasmonic waveguide with square cavity. APPLIED OPTICS 2023; 62:27-33. [PMID: 36606845 DOI: 10.1364/ao.476510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Accepted: 11/20/2022] [Indexed: 06/17/2023]
Abstract
A resistive switch effect-based optical memristive switch with an ultra-high extinction ratio and ultra-compact size working at 1550 nm is proposed. The device is composed of a metal-insulator-metal waveguide and a square resonator with active electrodes. The formation and rupture of conductive filaments in the resonant cavity can alter the resonant wavelength, which triggers the state of the optical switch ON or OFF. The numerical results demonstrate that the structure has an ultra-compact size (less than 1 µm) and ultra-high extinction ratio (37 dB). The proposed device is expected to address the problems of high-power consumption and large-scale optical switches and can be adopted in optical switches, optical modulation, optical storage and computing, and large-scale photonic integrated devices.
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Chee MY, Dananjaya PA, Lim GJ, Du Y, Lew WS. Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiO x-Based Exponential Selector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35959-35968. [PMID: 35892238 DOI: 10.1021/acsami.2c11016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to reproduce from a single nonvolatile resistive random-access memory (RRAM) element, as it requires a certain degree of volatility. In this work, a Pt/TiOx/Pt exponential selector is introduced not only to suppress the sneak current but also to enable the TIP feature in a one selector-one RRAM (1S1R) synaptic device. Our measurements reveal that the exponential selector exhibits the STP characteristic, while a Pt/HfOx/Ti RRAM enables the long-term memory capability of the synapse. Thereafter, we experimentally demonstrated pulse frequency-dependent multilevel switching in the 1S1R device, exhibiting the TIP capability of the developed 1S1R synapse. The observed STP of the selector is strongly influenced by the bottom metal-oxide interface, in which Ar plasma treatment on the bottom Pt electrode resulted in the annihilation of the STP feature in the selector. A mechanism is thus proposed to explain the observed STP, using the local electric field enhancement induced at the metal-oxide interface coupled with the drift-diffusion model of mobile O2- and Ti3+ ions. This work therefore provides a reliable means of producing the STP feature in a 1S1R device, which demonstrates the TIP capability sought after in hardware-based ANN.
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Affiliation(s)
- Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Putu Andhita Dananjaya
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Gerard Joseph Lim
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Yuanmin Du
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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Xu Z, Guan P, Ji T, Hu Y, Li Z, Wang W, Xu N. Cationic Interstitials: An Overlooked Ionic Defect in Memristors. Front Chem 2022; 10:944029. [PMID: 35873039 PMCID: PMC9304709 DOI: 10.3389/fchem.2022.944029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Accepted: 06/08/2022] [Indexed: 11/19/2022] Open
Abstract
Metal oxide-based memristors are promising candidates for breaking through the limitations in data storage density and transmission efficiency in traditional von Neumann systems, owing to their great potential in multi-state data storage and achievement of the in-memory neuromorphic computing paradigm. Currently, the resistive switching behavior of those is mainly ascribed to the formation and rupture of conductive filaments or paths formed by the migration of cations from electrodes or oxygen vacancies in oxides. However, due to the relatively low stability and endurance of the cations from electrodes, and the high mobility and weak immunity of oxygen vacancies, intermediate resistance states can be hardly retained for multilevel or synaptic resistive switching. Herein, we reviewed the memristors based on cationic interstitials which have been overlooked in achieving digital or analog resistive switching processes. Both theoretical calculations and experimental works have been surveyed, which may provide reference and inspiration for the rational design of multifunctional memristors, and will promote the increments in the memristor fabrications.
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Affiliation(s)
- Zhemi Xu
- College of Chemistry and Material Engineering, Beijing Technology and Business University, Beijing, China
| | - Peiyuan Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, Australia
| | - Tianhao Ji
- College of Chemistry and Material Engineering, Beijing Technology and Business University, Beijing, China
| | - Yihong Hu
- College of Computer, National University of Defense Technology, Changsha, China
| | - Zhiwei Li
- College of Electronic Science and Technology, National University of Defense Technology, Changsha, China
| | - Wenqing Wang
- College of Computer, National University of Defense Technology, Changsha, China
| | - Nuo Xu
- College of Computer, National University of Defense Technology, Changsha, China
- *Correspondence: Nuo Xu,
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12
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Enhanced mechanical and sintering properties of MgO-TiO2 ceramic composite via digital light processing. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2021.12.016] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
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13
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Wang Z, Jin S, Zhang F, Wang D. Combined Toxicity of TiO 2 Nanospherical Particles and TiO 2 Nanotubes to Two Microalgae with Different Morphology. NANOMATERIALS 2020; 10:nano10122559. [PMID: 33419281 PMCID: PMC7766607 DOI: 10.3390/nano10122559] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2020] [Revised: 12/16/2020] [Accepted: 12/16/2020] [Indexed: 11/22/2022]
Abstract
The joint activity of multiple engineered nanoparticles (ENPs) has attracted much attention in recent years. Many previous studies have focused on the combined toxicity of different ENPs with nanostructures of the same dimension. However, the mixture toxicity of multiple ENPs with different dimensions is much less understood. Herein, we investigated the toxicity of the binary mixture of TiO2 nanospherical particles (NPs) and TiO2 nanotubes (NTs) to two freshwater algae with different morphology, namely, Scenedesmus obliquus and Chlorella pyrenoidosa. The physicochemical properties, dispersion stability, and the generation of reactive oxygen species (ROS) were determined in the single and binary systems. Classical approaches to assessing mixture toxicity were applied to evaluate and predict the toxicity of the binary mixtures. The results show that the combined toxicity of TiO2 NPs and NTs to S. obliquus was between the single toxicity of TiO2 NTs and NPs, while the combined toxicity to C. pyrenoidosa was higher than their single toxicity. Moreover, the toxicity of the binary mixtures to C. pyrenoidosa was higher than that to S. obliquus. A toxic unit assessment showed that the effects of TiO2 NPs and NTs were additive to the algae. The combined toxicity to S. obliquus and C. pyrenoidosa can be effectively predicted by the concentration addition model and the independent action model, respectively. The mechanism of the toxicity caused by the binary mixtures of TiO2 NPs and NTs may be associated with the dispersion stability of the nanoparticles in aquatic media and the ROS-induced oxidative stress effects. Our results may offer a new insight into evaluating and predicting the combined toxicological effects of ENPs with different dimensions and of probing the mechanisms involved in their joint toxicity.
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Affiliation(s)
- Zhuang Wang
- Jiangsu Key Laboratory of Atmospheric Environment Monitoring and Pollution Control, Collaborative Innovation Center of Atmospheric Environment and Equipment Technology, School of Environmental Science and Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China; (S.J.); (F.Z.)
- Correspondence: ; Tel.: +86-25-58731090
| | - Shiguang Jin
- Jiangsu Key Laboratory of Atmospheric Environment Monitoring and Pollution Control, Collaborative Innovation Center of Atmospheric Environment and Equipment Technology, School of Environmental Science and Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China; (S.J.); (F.Z.)
| | - Fan Zhang
- Jiangsu Key Laboratory of Atmospheric Environment Monitoring and Pollution Control, Collaborative Innovation Center of Atmospheric Environment and Equipment Technology, School of Environmental Science and Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China; (S.J.); (F.Z.)
| | - Degao Wang
- School of Environmental Science and Technology, Dalian Maritime University, Dalian 116023, China;
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