Systematic kMC Study of Doped Hole Injection Layers in Organic Electronics

The Optimization of Hole Injection Layer in Organic Light-Emitting Diodes

Organic light-emitting diodes (OLEDs) are widely recognized as the forefront technology for displays and lighting technology. Now, the global OLED market is nearly mature, driven by the rising demand for superior displays in smartphones. In recent years, numerous strategies have been introduced and demonstrated to optimize the hole injection layer to further enhance the efficiency of OLEDs. In this paper, different methods of optimizing the hole injection layer were elucidated, including using a suitable hole injection material to minimize the hole injection barrier and match the energy level with the emission layer, exploring new preparation methods to optimize the structure of hole injection layer, and so on. Meanwhile, this article can help people to understand the current research progress and the challenges still faced in relation to the hole injection layer in OLEDs, providing future research directions to enhance the properties of OLEDs.

Controlling doping efficiency in organic semiconductors by tuning short-range overscreening

Conductivity doping has emerged as an indispensable method to overcome the inherently low conductivity of amorphous organic semiconductors, which presents a great challenge in organic electronics applications. While tuning ionization potential and electron affinity of dopant and matrix is a common approach to control the doping efficiency, many other effects also play an important role. Here, we show that the quadrupole moment of the dopant anion in conjunction with the mutual near-field host-dopant orientation have a crucial impact on the conductivity. In particular, a large positive quadrupole moment of a dopant leads to an overscreening in host-dopant integer charge transfer complexes. Exploitation of this effect may enhance the conductivity by several orders of magnitude. This finding paves the way to a computer-aided systematic and efficient design of highly conducting amorphous small molecule doped organic semiconductors.

In situ infrared spectroscopy depth profilometer for organic thin films

Organic films are widely used in organic optoelectronics due to their flexibility, low-cost fabrication, and ability to be processed over large areas. Typically, the composition of these thin films varies along the film depth direction. In this work, we present a home-developed in situ instrument comprised of a capacitive coupled plasma generator in combination with a Fourier transform infrared spectrometer, to measure the composition distribution along the film-normal direction. During the measurement, the film is sequentially etched by the soft plasma and the evolution of the infrared spectra of the film is in situ monitored by a spectrometer, from which the film-depth-dependent infrared spectra are extracted. The film-depth resolution of this analytical method has been improved to ∼1 nanometer. Thus, it is possible to calculate the composition that varies with depth by utilizing this analysis method. This equipment, which can be applied effectively to the characterization of thin films for both conjugated and unconjugated organic molecules by directly measuring their distinctive molecular vibration signatures, is simple and clear to set up in a large number of laboratories.