First-Principles Study on the Photoelectric Properties of CsGeI3 under Hydrostatic Pressure

Hybrid-DFT study of halide perovskites, an energy-efficient material under compressive pressure for piezoelectric applications

Recent studies have reported that lead-halide perovskites are the most efficient energy-harvesting materials. Regardless of their high-output energy and structural stability, lead-based products have risk factors due to their toxicity. Therefore, lead-free perovskites that offer green energy are the expected alternatives. We have taken CsGeX3(X = Cl, Br, and I) as lead-free halide perovskites despite knowing the low power conversion rate. Herein, we have tried to study the mechanisms of enhancement of energy-harvesting capabilities involving an interplay between structure and electronic properties. A density functional theory simulation of these materials shows a decrease in the band gaps, lattice parameters, and volumes with increasing applied pressure. We report the high piezoelectric responses and high electro-mechanical conversion rates, which are intriguing for generating electricity through mechanical stress.

Strain-induced bandgap engineering in CsGeX3 (X = I, Br or Cl) perovskites: insights from first-principles calculations

Based on density functional theory and following first-principles methods, this paper investigated the electronic structures, densities of states, effective masses of electrons and holes, and optical properties of CsGeX₃ (X = I, Br or Cl) perovskites under triaxial strains of -4% to 4%. The calculated results show that the tuning range of the bandgaps of the CsGeI₃, CsGeBr₃, and CsGeCl₃ perovskites are 1.16 eV, 1.64 eV, and 1.63 eV, respectively. This result shows that the bandgap of the CsGeX₃ perovskite is tuned over the entire visible spectrum by applying strain. Also, it is found that the change of the bandgap is caused by the change of the Ge-X long bond. Besides, the optimal bandgaps of CsGeI₃ and CsGeBr₃ can be achieved by applying compressive strains, providing theoretical support for adjusting the bandgaps of CsGeX₃ perovskites. The effective masses of electrons and holes of CsGeX₃ perovskites decrease gradually with the strains changing from 4% to -4%, which is conducive to the transmission of electrons and holes. In addition, the optical properties of CsGeX₃ perovskites change from redshifted to blueshifted under different strains.

Pressure induced phase transitions of bulk CsGeCl3 and ultrafast laser pulses induced excited-state properties of CsGeCl3 quantum dots

First-principles calculations are carried out to investigate the structural, electronic, and optical properties of CsGeCl3. Results indicate CsGeCl3 undergoes three structural phase transitions from Cm or R3m to Pm3m at...

Structural and Optoelectronic Properties of Two-Dimensional Ruddlesden-Popper Hybrid Perovskite CsSnBr3

Ultrathin inorganic halogenated perovskites have attracted attention owing to their excellent photoelectric properties. In this work, we designed two types of Ruddlesden-Popper hybrid perovskites, Cs_n+1Sn_nBr_3n+1 and Cs_nSn_n+1Br_3n+2, and studied their band structures and band gaps as a function of the number of layers (n = 1-5). The calculation results show that Cs_n+1Sn_nBr_3n+1 has a direct bandgap while the bandgap of Cs_nSn_n+1Br_3n+2 can be altered from indirect to direct, induced by the 5p-Sn state. As the layers increased from 1 to 5, the bandgap energies of Cs_n+1Sn_nBr_3n+1 and Cs_nSn_n+1Br_3n+2 decreased from 1.209 to 0.797 eV and 1.310 to 1.013 eV, respectively. In addition, the optical absorption of Cs_n+1Sn_nBr_3n+1 and Cs_nSn_n+1Br_3n+2 was blue-shifted as the structure changed from bulk to nanolayer. Compared with that of Cs_n+1Sn_nBr_3n+1, the optical absorption of Cs_nSn_n+1Br_3n+2 was sensitive to the layers along the z direction, which exhibited anisotropy induced by the SnBr₂-terminated surface.